Abstract: A pressure detecting device is mounted in a measurement target and instrument includes a strain inducer to which pressure of a pressure medium is applied and which generates strain in accordance with the pressure and a strain detecting element that is bonded onto a surface opposite to a pressure receiving surface of the strain inducer, in which the strain detecting element includes one or multiple central strain resistant bridges which are arranged at a central portion of the strain detecting element in a bonded surface direction, and one or multiple outer peripheral strain resistant bridges which are arranged at an outer periphery, and in which, for example, deformation of the strain detecting element caused by an external force when being screw-fixed to the measurement target instrument is obtained through the multiple strain resistant bridges. An error of detection pressure caused by the deformation in a pressure value detected through the central strain resistant bridge is corrected.

Abstract: A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured.

Abstract: A pressure detecting device is mounted in a measurement target and instrument includes a strain inducer to which pressure of a pressure medium is applied and which generates strain in accordance with the pressure and a strain detecting element that is bonded onto a surface opposite to a pressure receiving surface of the strain inducer, in which the strain detecting element includes one or multiple central strain resistant bridges which are arranged at a central portion of the strain detecting element in a bonded surface direction, and one or multiple outer peripheral strain resistant bridges which are arranged at an outer periphery, and in which, for example, deformation of the strain detecting element caused by an external force when being screw-fixed to the measurement target instrument is obtained through the multiple strain resistant bridges. An error of detection pressure caused by the deformation in a pressure value detected through the central strain resistant bridge is corrected.

Abstract: A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured.

Abstract: A mechanical quantity measuring device (100) includes a semiconductor substrate (1) attached to a measured object so as to indirectly measure the mechanical quantity acting on the measured object; a measuring portion (7) capable of measuring a mechanical quantity acting on the semiconductor substrate (1) at a central part (1c) of the semiconductor substrate (1); and plural impurity diffused resistors (3a, 3b, 4a, 4b) forming a group (5) gathering closely to each other in at least one place, on an outer peripheral part (1e) outside the central part (1c) of the semiconductor substrate (1). The plural impurity diffused resistors (3a, 3b, 4a, 4b) forming one of the group (5) are connected to each other to form a Wheatstone bridge (2a, 2b). Thus, the mechanical quantity measuring device (100) can securely detect its own exfoliation.

Abstract: Because of stress occurring due to a change in temperature, and presence of heat distribution on a semiconductor substrate, and a dopant dosage gradient, an offset output occurs to a Wheatstone bridge circuit intended for detection of strain, posing a problem. To solve the problem, diffusion resistors are disposed in the form of a matrix, and bridge resistors Rv1, Rv2 each are formed by selectively connecting diffusion resistors disposed in each odd column, in series with each other, while Rh1, Rh2 each are formed by selectively connecting diffusion resistors disposed in each even column, in series with each other.

Abstract: Because of stress occurring due to a change in temperature, and presence of heat distribution on a semiconductor substrate, and a dopant dosage gradient, an offset output occurs to a Wheatstone bridge circuit intended for detection of strain, posing a problem. To solve the problem, diffusion resistors are disposed in the form of a matrix, and bridge resistors Rv1, Rv2 each are formed by selectively connecting diffusion resistors disposed in each odd column, in series with each other, while Rh1, Rh2 each are formed by selectively connecting diffusion resistors disposed in each even column, in series with each other.

Abstract: In a configuration having a nonvolatile memory and a volatile memory, when storage information of the nonvolatile memory is changed and an abnormal operation occurs due to temporary blackout, ?-ray or others, the abnormal operation is recovered to a normal operation regardless of the presence of the detection of the abnormal operation. A reset to be inputted to the nonvolatile memory is collectively transmitted for each 1 bit, each 1 word or each predetermined arbitrary bit, and the collectively transmitted reset serving as one unit is periodically transmitted, so that the abnormal operation is recovered to a normal operation without input signals from outside even if the storage information of the nonvolatile memory is changed due to temporary blackout, ?-ray or others.

Abstract: Components are provided including: an expected-value generating circuit that generates, upon reception of an output signal directed from the interface unit to the internal processing circuit; an expected-value signal for detecting an error in the output signal, a comparing and determining circuit that compares the output signal and the expected-value signal to determine whether these signals match with each other; and an output processing circuit that retains the determination result of the comparing and determining circuit and performs a process for externally outputting the determination result. In the case where a test pattern, which is an M-series pseudo-random-number signal, is input from a pulse generator or the like to the I/F unit for testing, a circuit based on a logic of generation of such an M-series pseudo-random-number signal is provided in the expected-value generating circuit.