Patents by Inventor Kentaro NAGAMATSU

Kentaro NAGAMATSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12009206
    Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.
    Type: Grant
    Filed: February 22, 2023
    Date of Patent: June 11, 2024
    Assignees: National University Corporation Nagoya University, TOYODA GOSEI CO., LTD
    Inventors: Shugo Nitta, Yoshio Honda, Kentaro Nagamatsu, Hiroshi Amano, Naoki Fujimoto
  • Publication number: 20230250047
    Abstract: A method for isomerizing an aliphatic diamine represented by Formula (1) below in the presence of an imine compound obtained by dehydration condensation of an aliphatic diamine represented by Formula (1) below and an aldehyde and/or a ketone; and in the presence of an alkali metal. A ratio of a total amount of the alkali metal to a total amount of the aliphatic diamine is 0.5 mol % or greater and 6.0 mol % or less, and R represents a single bond or an unsubstituted aliphatic or alicyclic alkylene group having 1 to 8 carbon atoms, and n represents an integer from 0 to 5.
    Type: Application
    Filed: July 6, 2021
    Publication date: August 10, 2023
    Applicant: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Masayoshi UENO, Akifumi IIDA, Kentaro NAGAMATSU
  • Publication number: 20230193512
    Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.
    Type: Application
    Filed: February 22, 2023
    Publication date: June 22, 2023
    Inventors: Shugo NITTA, Yoshio HONDA, Kentaro NAGAMATSU, Hiroshi AMANO, Naoki FUJIMOTO
  • Patent number: 11591717
    Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: February 28, 2023
    Assignees: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, TOYODA GOSEI CO., LTD.
    Inventors: Shugo Nitta, Yoshio Honda, Kentaro Nagamatsu, Hiroshi Amano, Naoki Fujimoto
  • Publication number: 20200270767
    Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.
    Type: Application
    Filed: September 7, 2018
    Publication date: August 27, 2020
    Inventors: Shugo NITTA, Yoshio HONDA, Kentaro NAGAMATSU, Hiroshi AMANO, Naoki FUJIMOTO