Patents by Inventor Kentaro NEGAI

Kentaro NEGAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10414661
    Abstract: A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si-H groups)/(Si-H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: September 17, 2019
    Assignee: Thin Film Electronics ASA
    Inventors: Yuichi Goto, Masahisa Endo, Gun Son, Kentaro Negai
  • Publication number: 20170313592
    Abstract: A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.
    Type: Application
    Filed: October 13, 2015
    Publication date: November 2, 2017
    Inventors: Yuichi GOTO, Masahisa ENDO, Gun SON, Kentaro NEGAI