Abstract: A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets; ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at its front side on a mounting surface to press the wafer at regions surrounded by the etched grooves; and bonding a tape to the front side of the wafer before performance of at least the pressing step.

Abstract: A wafer processing method for processing a wafer having a substrate and a device layer formed on a front side of the substrate includes forming a mask on a back side of the wafer, so as to form an etched groove along each street through a thickness of the substrate from the back side of the wafer, performing plasma etching from the back side of the wafer through the mask to the substrate after forming the mask, thereby forming the etched groove in the substrate along each street so that the etched groove has a depth equal to the thickness of the substrate, and applying a laser beam to the device layer along each street from the front side of the wafer before etching and mask forming, thereby forming a device layer dividing groove corresponding to the etched groove along each street.

Abstract: Disclosed herein is a laser processing apparatus including a controller. The controller includes a target pattern detecting section performing matching between patterns formed in each device imaged and a key pattern to thereby detect a target pattern included in each device, a spacing detecting section detecting the spacing in a Y direction between the target pattern and an ablation groove formed along each division line by ablation, and a map creating section creating a map showing the spacing in the Y direction between each target pattern and the ablation groove for the plural devices arranged along the ablation groove.

Abstract: A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets; ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at its front side on a mounting surface to press the wafer at regions surrounded by the etched grooves; and bonding a tape to the front side of the wafer before performance of at least the pressing step.

Abstract: A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets and to define chip regions surrounded by the grooves; immersing the wafer in water, to which ultrasonic vibrations are being applied, after the etching step, whereby the device layer is cracked or ruptured along outer peripheral edges of the chip regions; and bonding a tape to a front side of the wafer before performance of the water immersion step.

Abstract: A method for dividing a wafer having a wiring layer including Cu on the front side, the front side of the wafer being partitioned by a plurality of crossing division lines to define a plurality of separate regions where a plurality of devices are formed. The method includes a laser processed groove forming step of applying a laser beam to the wiring layer along each division line to thereby remove the wiring layer along each division line and form a laser processed groove along each division line, a cutting step of using a cutting blade having a thickness smaller than the width of each laser processed groove to fully cut the wafer along each laser processed groove after performing the laser processed groove forming step, and a dry etching step of dry-etching at least each laser processed groove after performing the laser processed groove forming step.

Abstract: A laser processing apparatus includes a branching unit configured to branch a laser beam to a first optical path and a second optical path, a condenser configured to condense the branched laser beams on a processing face of a workpiece, an output power measuring unit configured to measure the output power of the laser beam emitted from a laser beam generation unit and having passed through the condenser, and a blocking member positioning mechanism disposed between the condenser and the output power measuring unit and capable of positioning a blocking member between a first laser beam blocking position at which the blocking member blocks only the laser beam of the first optical path from between the branched laser beams and a retracted position at which the blocking member blocks none of the laser beams.

Abstract: A laser beam irradiation unit of laser processing apparatus includes a pulse laser beam oscillating unit, a condenser that condenses a pulse laser beam and emits the beam to a workpiece held by a chuck table, a dichroic mirror disposed between the pulse laser beam oscillating unit and the condenser, a strobe light irradiation unit that emits light to a path on which the dichroic mirror and the condenser are disposed, a beam splitter disposed between the strobe light irradiation unit and the dichroic mirror, and an imaging unit disposed on the path of light split by the beam splitter. A controller actuates the strobe light irradiation unit and the imaging unit according to the timing of the pulse laser beam, and detects the width of a laser-processed groove immediately after emission of the pulse laser beam on the basis of an image signal from the imaging unit.

Abstract: A laser processing apparatus includes: a chuck table that holds a packaged wafer by a holding surface; a laser processing unit that applies a laser beam to the packaged wafer to form a through-groove along each division line; an X-axis moving unit that moves the chuck table in an X-axis direction; and an examination unit. The chuck table includes: a holding member that forms the holding surface; and a light emitting body. The examination unit includes: a line sensor that extends in a Y-axis direction; and a control unit that determines the result of processing through reception by the line sensor of light from the light emitting body through the through-groove. The line sensor images the whole surface of the packaged wafer being held by the chuck table.

Abstract: A laser processing apparatus includes: a chuck table that holds a packaged wafer; a laser beam applying unit that applies a pulsed laser beam to the packaged wafer; X-axis moving unit for moving the chuck table in an X-axis direction; an imaging unit that images the packaged wafer; and a control unit. The chuck table has a transparent or semi-transparent holding member and a light emitting body. The control unit includes: an imaging instruction section that causes the imaging unit to image the packaged wafer while the pulsed laser beam is being applied to the packaged wafer; and a determination section that determines the processed state of a through-groove from a picked-up image obtained according to an instruction by the imaging instruction section.

Abstract: A method detects whether or not a workpiece is coated with a water-soluble protective film. The method includes a preparatory step before detection and a detecting step. The preparatory step includes irradiating with infrared light a first region coated with the water-soluble protective film and a second region not coated with the water-soluble protective film for a reference, receiving the reflected light, and thereby acquiring an intensity of reflection from the first region and an intensity of reflection from the second region; and a threshold determining step of determining a threshold from the intensity of reflection from the first region and the intensity of reflection from the second region at a wavenumber of 3000 cm?1 to 3600 cm?1. The detecting step includes irradiating a surface of the workpiece with the infrared light, receiving the reflected light, and comparing the thus obtained intensity of reflection with the threshold.

Abstract: Disclosed herein is a wafer processing method including a processed position measuring step of imaging an area including a beam plasma generated by applying a pulsed laser beam to a wafer, by using an imaging unit during the formation of a laser processed groove on the wafer, and next measuring the positional relation between the position of the beam plasma and a preset processing position. Accordingly, it is possible to check whether or not the laser processed groove is formed at a desired position, in real time during laser processing. If the position of the laser processed groove is deviated, the processed position can be immediately corrected.

Abstract: A laser beam irradiation unit of a laser processing apparatus includes a pulse laser oscillator, a condenser which converges and irradiates a pulse laser beam upon a workpiece held on a chuck table, a dichroic mirror disposed between the pulse laser oscillator and the condenser, a strobo flash irradiation unit which irradiates light on a route of the dichroic mirror and the condenser, a beam splitter disposed between the strobo flash irradiation unit and the dichroic mirror, and an image pickup unit disposed on the route of the light split by the beam splitter. A control unit renders the strobo flash irradiation unit and the image pickup unit operative in a timed relationship with the pulse laser beam oscillated from the pulse laser beam oscillator and irradiated upon the workpiece and detects a processed state on the basis of an image signal from the image pickup unit.

Abstract: Disclosed herein is a wafer processing method including a processed position measuring step of imaging an area including a beam plasma generated by applying a pulsed laser beam to a wafer, by using an imaging unit during the formation of a laser processed groove on the wafer, and next measuring the positional relation between the position of the beam plasma and a preset processing position. Accordingly, it is possible to check whether or not the laser processed groove is formed at a desired position, in real time during laser processing. If the position of the laser processed groove is deviated, the processed position can be immediately corrected.

Abstract: A method for dividing a wafer having a wiring layer including Cu on the front side, the front side of the wafer being partitioned by a plurality of crossing division lines to define a plurality of separate regions where a plurality of devices are formed. The method includes a laser processed groove forming step of applying a laser beam to the wiring layer along each division line to thereby remove the wiring layer along each division line and form a laser processed groove along each division line, a cutting step of using a cutting blade having a thickness smaller than the width of each laser processed groove to fully cut the wafer along each laser processed groove after performing the laser processed groove forming step, and a dry etching step of dry-etching at least each laser processed groove after performing the laser processed groove forming step.

Abstract: Disclosed herein is a protective film detecting method including the steps of supplying a mist to a work surface of a workpiece in the condition where the work surface is coated with a protective film, applying light to the work surface of the workpiece, imaging the work surface of the workpiece after supplying the mist, and detecting an uncoated area where the protective film is not formed, by using a difference in light intensity between a coated area where the protective film is formed and the uncoated area where the protective film is not formed to cause the formation of asperities due to droplets formed from the mist supplied to the work surface of the workpiece and the occurrence of Mie scattering of the light applied to the asperities, the difference in light intensity being detected from an image obtained in the imaging step.

Abstract: A laser beam irradiation unit of laser processing apparatus includes a pulse laser beam oscillating unit, a condenser that condenses a pulse laser beam and emits the beam to a workpiece held by a chuck table, a dichroic mirror disposed between the pulse laser beam oscillating unit and the condenser, a strobe light irradiation unit that emits light to a path on which the dichroic mirror and the condenser are disposed, a beam splitter disposed between the strobe light irradiation unit and the dichroic mirror, and an imaging unit disposed on the path of light split by the beam splitter. A controller actuates the strobe light irradiation unit and the imaging unit according to the timing of the pulse laser beam, and detects the width of a laser-processed groove immediately after emission of the pulse laser beam on the basis of an image signal from the imaging unit.

Abstract: Disclosed herein is a laser processing apparatus including a controller. The controller includes a target pattern detecting section performing matching between patterns formed in each device imaged and a key pattern to thereby detect a target pattern included in each device, a spacing detecting section detecting the spacing in a Y direction between the target pattern and an ablation groove formed along each division line by ablation, and a map creating section creating a map showing the spacing in the Y direction between each target pattern and the ablation groove for the plural devices arranged along the ablation groove.

Abstract: A method detects whether or not a workpiece is coated with a water-soluble protective film. The method includes a preparatory step before detection and a detecting step. The preparatory step includes irradiating with infrared light a first region coated with the water-soluble protective film and a second region not coated with the water-soluble protective film for a reference, receiving the reflected light, and thereby acquiring an intensity of reflection from the first region and an intensity of reflection from the second region; and a threshold determining step of determining a threshold from the intensity of reflection from the first region and the intensity of reflection from the second region at a wavenumber of 3000 cm?1 to 3600 cm?1. The detecting step includes irradiating a surface of the workpiece with the infrared light, receiving the reflected light, and comparing the thus obtained intensity of reflection with the threshold.

Abstract: A laser processing apparatus including a dust discharging unit for discharging dust generated by the application of a laser beam from a focusing unit to a workpiece. The dust discharging unit includes a dust collector provided below the focusing unit and a suction unit connected to the dust collector. The dust collector has a U-shaped configuration composed of a rectangular top wall having an opening for allowing the pass of the laser beam applied from the focusing unit, a first side wall projecting downward from one side edge of the top wall, and a second side wall projecting downward from the other side edge of the top wall so as to be opposed to the first side wall. The suction unit includes a suction duct having one end connected to the dust collector and the other end connected to a vacuum source.