Abstract: According to one embodiment, a method of manufacturing of a semiconductor device is provided. In the method, a front surface of a semiconductor substrate and a front surface of a support substrate are bonded to each other by an adhesive. A part of a circumferential part of the support substrate is subjected to water-repellent treatment to thereby form a water-repellent area on the part of the circumferential part in such a manner that the water-repellent area and an end face of the adhesive are in contact with each other. The semiconductor substrate is removed from a rear surface side by wet etching.

Abstract: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

Abstract: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

Abstract: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

Abstract: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

Abstract: A spacer structure is provided between a first substrate formed with a phosphor screen and a second substrate provided with a plurality of electron emission sources. A supporting substrate of the spacer structure has a first surface opposed to the first substrate, a second surface opposed to the second substrate, and a plurality of electron beam apertures opposed to the electron emission sources. A plurality of spacers are set up on the second surface. The supporting substrate has a plurality of height reducing portions which are individually in contact with the spacers and elastically deformable in the height direction of the spacers. Each of the height reducing portions has a recess formed in the first surface so as to face the spacer and a plurality of grooves formed on the second surface and situated around the spacer.

Abstract: Spacers and a grid unit are provided between a first substrate having a phosphor screen formed thereon and a second substrate provided with a plurality of electron emission sources. The grid unit includes a plate-shaped grid which has a plurality of electron beam apertures opposed to the electron emission sources, individually, and is located opposite the second substrate and to which a predetermined voltage is applied, and a first dielectric layer which covers an outer surface of the grid. The grid unit includes a conductive layer, which is provided between the first dielectric layer and the second substrate and connected to a ground potential, and a second dielectric layer formed covering the conductive layer and situated between the conductive layer and the second substrate.