Abstract: Provided is a film forming apparatus capable of stably supplying a large amount of ceramic raw material powder for a long time and forming a homogeneous and dense film. A film forming apparatus 1 for forming a film on a base material K includes an aerosol transport path 10 for ejecting an aerosol obtained by dispersing a ceramic raw material powder in a gas, from an ejection end 10a toward the base material K, in which a flow path cross-section at an ejection end 10a of the aerosol transport path 10 has a substantially circular shape with an area of 10 mm2 or more.

Abstract: A problem to be solved by the present invention is that there is no method for forming a dense structure on a porous structure at low cost. In addition, another object is to provide a high quality and inexpensive structure of a brittle material and a laminate thereof as an intermediate layer for facilitating formation of a dense structure on a porous structure. A structure is provided having a brittle particle assembly having a plurality of brittle particles, wherein the brittle particle assemblies are arranged adjacently to each other, and the brittle particles having a brittle material region in the periphery are crosslinked (connected) by the brittle material region to bond the brittle particles to each other, and thereby form a brittle material crosslinked structure region preventing the mobility of the brittle particles.

Abstract: Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling.

Abstract: A problem to be solved by the present invention is that there is no method for forming a dense structure on a porous structure at low cost. In addition, another object is to provide a high quality and inexpensive structure of a brittle material and a laminate thereof as an intermediate layer for facilitating formation of a dense structure on a porous structure. A structure is provided having a brittle particle assembly having a plurality of brittle particles, wherein the brittle particle assemblies are arranged adjacently to each other, and the brittle particles having a brittle material region in the periphery are crosslinked (connected) by the brittle material region to bond the brittle particles to each other, and thereby form a brittle material crosslinked structure region preventing the mobility of the brittle particles.

Abstract: A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes.

Abstract: Provided is a vanadium oxide film which shows substantially no hysteresis of resistivity changes due to temperature rising/falling, has a low resistivity at room temperature, has a large absolute value of the temperature coefficient of resistance, and shows semiconductor-like resistance changes in a wide temperature range. In the vanadium oxide film, a portion of the vanadium has been replaced by aluminum and copper, and the amount of substance of aluminum is 10 mol % based on the sum total of the amount of substance of vanadium, the amount of substance of aluminum, and the amount of substance of copper. This vanadium oxide film has a low resistivity, has a large absolute value of the temperature coefficient of resistance, and shows substantially no hysteresis of resistivity changes due to temperature rising/falling.

Abstract: A film-forming device includes: a microwave supplying unit, which supplies microwaves for generating plasma along a treatment surface of a central conductor comprising at least a conductive workpiece material; a negative voltage applying unit, which applies to the workpiece material a negative bias voltage for expanding a sheath layer along the treatment surface of the workpiece material; a microwave transmitting window, which make the microwave, which is supplied by the microwave supplying unit, propagate to the expanded sheath layer through a microwave transmitting surface thereof, and a surrounding wall, which surrounds the microwave transmitting surface of the microwave transmitting window and protrudes beyond the microwave transmitting surface in a propagation direction in which the microwaves propagate.

Abstract: A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes

Abstract: An inorganic material paste obtained by mixing an organometallic compound, inorganic material particles, and a solvent. Additionally provided is an inorganic material paste obtained by mixing inorganic material particles, which are obtained by subjecting an organometallic compound to calcination or light irradiation, and a solvent. The foregoing inorganic material paste can reduce the amount of glass material, reduce the film thickness because the volume density of the functional material is high, yield favorable production efficiency, and achieve cost reduction since it is suitable for mass production. For instance, upon producing a thin film resistor, the resistor obtained by using the paste of the present invention is characterized in having superior stability even in the form of a thin film, and having minimal change in the resistance value caused by self-heating even under a high current.

Abstract: A film forming device includes: a microwave supplying unit configured to supply microwave pulses to generate plasma along a processing surface of a workpiece material; an applying unit configured to apply negative bias voltage pulses to spread a sheath layer along the processing surface of the workpiece material, and a control unit configured to control an applying timing of the negative bias voltage pulses and a supplying timing of the microwave pulses, wherein the control unit is configured to control the applying timing of the negative bias voltage pulses and the supplying timing of the microwave pulses so that a ratio of an applying time period of one negative bias voltage pulse in a supplying time period of one microwave pulse to the supplying time period of one microwave pulse is equal to or greater than 0.9.

Abstract: A method for producing silicon, the method comprising a heating step of heating a metal powder Mp1 made of at least one member selected from the group consisting of Mg, Ca and Al in a plasma P; and a reducing step of reducing a halogenated silane G1 by the metal powder Mp2 heated in the plasma P to obtain silicon.

Abstract: A visible/near-infrared spectrum analyzing method for identifying components of a sample and determining characteristics of the components using visible light and/or near-infrared light having a wavelength of 400 to 2500 nm. The quantitative determination of the components, which have been conventionally hard to identify, of a grape of a small fruit cultivar for wine making can be made in a nondestructive way. A grape of a small fruit cultivar for wine making (a sample under examination) is irradiated with visible light and/or near-infrared light having a wavelength of 600 to 1100 nm and is subjected to spectrum determination of the sample and an absorption spectrum is determined from the obtained spectrum. By employing a multivariate statistical analysis (hereinafter referred to multivariate analysis) by the PLS or MLR method, a model enabling quantitative determination of the components of the sample under examination is created.