Abstract: A semiconductor device includes a first semiconductor chip, a second semiconductor chip, a post electrode, and a burying layer. The first semiconductor chip includes a plurality of first metal terminals and external metal terminals formed in different regions, and a bonding layer including an oxide film to fill therebetween. The second semiconductor chip includes a plurality of second metal terminals formed on an opposed surface of the first semiconductor chip and a bonding layer including an oxide film provided to fill therebetween. The second semiconductor chip is mounted on the first semiconductor chip by bonding the bonding layers one another. The post electrode is formed above the one surface of the first semiconductor chip and provided on the external metal terminal of the first semiconductor chip. The burying layer buries the second semiconductor chip and the post electrode on the one surface of the first semiconductor chip.

Abstract: A method and an apparatus for polishing a semiconductor wafer are provided. An initial thickness of the semiconductor wafer is actually measured to obtain a measured initial thickness value. First and second inter-positions are then set or determined with reference to the measured initial thickness value. The first and second inter-positions are predetermined taking into account any variation in the initial thickness of the semiconductor wafer. A polishing process is carried out under control to a motion of a polishing pad toward a stage, on which the semiconductor pad is held.

Abstract: In a semiconductor device including a semiconductor wafer having a first main surface where a circuit element is formed, electrode pads are formed at an upper portion of the first main surface of the semiconductor wafer electrically connected with the circuit element. Index marks are formed on a second main surface of the semiconductor wafer that is opposite the first main surface. The index marks consist of line segments and indicate a direction along which the semiconductor device is to be mounted.

Abstract: A power transmission apparatus T of a four wheel drive vehicle is provided with a multiple disc clutch C engaged in accordance with a difference between rotational speeds of a front wheel Wf and a rear wheel Wr and a gear ratio of a second gear mechanism 5 for transmitting rotation of the rear wheel Wr to an output shaft 9 of the multiple disc clutch C is set to be larger than a gear ratio of a first gear mechanism 4 for transmitting rotation of the front wheel Wf to an input shaft 8 of the multiple disc clutch C.

Abstract: A method and an apparatus for polishing a semiconductor wafer are provided. An initial thickness of the semiconductor wafer is actually measured to obtain a measured initial thickness value. First and second inter-positions are then set or determined with reference to the measured initial thickness value. The first and second inter-positions are predetermined taking into account any variation in the initial thickness of the semiconductor wafer. A polishing process is carried out under control to a motion of a polishing pad toward a stage, on which the semiconductor pad is held.

Abstract: A power transmission apparatus T of a four wheel drive vehicle is provided with a multiple disc clutch C engaged in accordance with a difference between rotational speeds of a front wheel Wf and a rear wheel Wr and a gear ratio of a second gear mechanism 5 for transmitting rotation of the rear wheel Wr to an output shaft 9 of the multiple disc clutch C is set to be larger than a gear ratio of a first gear mechanism 4 for transmitting rotation of the front wheel Wf to an input shaft 8 of the multiple disc clutch C.

Abstract: In a semiconductor device including a semiconductor wafer having a first main surface where a circuit element is formed, electrode pads are formed at an upper portion of the first main surface of the semiconductor wafer electrically connected with the circuit element. Index marks are formed on a second main surface of the semiconductor wafer that is opposite the first main surface. The index marks consist of line segments and indicate a direction along which the semiconductor device is to be mounted.

Abstract: In a semiconductor device including a semiconductor wafer having a main surface where a circuit element is formed, electrode pads are formed at an upper portion of the main surface of the semiconductor wafer as electrically connected with the circuit element. A sealing resin seals the upper portion of the main surface of the semiconductor wafer, and external connection terminals are formed at the upper portion of the main surface so as to project out from the surface of the sealing resin and are arrayed in a substantially regular pattern over specific intervals from one another. At least one of the external connection terminals has a shape different from the shape of the other external connection terminals. The shape of the external connection terminal is used as an index mark, so that the index mark forming process is simplified and the index mark does not come off.

Abstract: In a semiconductor device comprising a semiconductor wafer 1 that includes a main surface where a circuit element is formed, a plurality of electrode pads formed at an upper portion of the main surface of the semiconductor wafer electrically connected with the circuit element, a sealing resin 3 that seals the upper portion of the main surface of the semiconductor wafer and a plurality of external connection terminals formed at the upper portion of the main surface so as to project out from the surface of the sealing resin and arrayed in a substantially regular pattern over specific intervals from one another, at least one external connection terminal among the plurality of external connection terminals is formed in a shape different from the shape of the other external connection terminals. Since the shape of the external connection terminal itself can be used as an index mark, the index mark forming process can be simplified and such an index mark does not come off the semiconductor wafer, either.

Abstract: Either the front wheels and rear wheels of a front wheel- and rear wheel-drive vehicle are driven by an engine and the other thereof are driven by an electric motor. The electric motor is operated when the vehicle starts. A driving torque detecting circuit detects a driving torque of wheels to be driven by the engine. Control circuit prohibits the operation of the electric motor when the driving torque to be detected at vehicle start-up exceeds a predetermined value.

Abstract: Either the front wheels or the rear wheels of a front wheel- and rear wheel-drive vehicle are driven by an engine and the other thereof are driven by an electric motor. A detecting device detects a coefficient of friction on a road surface during running of the vehicle. Control circuit controls to operate the electric motor when the vehicle is subsequently started in a condition in which the coefficient of friction on the road surface is equal to or smaller than a predetermined value. The detecting device for detecting the coefficient of friction on the road surface is made up of a section for detecting the driving force of wheels to be driven by the engine, a section for detecting a slip ratio of the wheels, and a section for obtaining the coefficient of friction on the road surface based on a correlation between the driving force and the slip ratio.

Abstract: Either the front wheels or the rear wheels of a front wheel- and rear wheel-drive vehicle are driven by an engine and the other thereof are driven by an electric motor. A .mu. detecting circuit detects a coefficient of friction on a road surface. A control circuit controls to operate the electric motor such that, when the vehicle is started in a condition in which a detected coefficient of friction is below a predetermined value, an output torque of the electric motor becomes a predetermined set value corresponding to the detected coefficient of friction.