Abstract: An embodiment includes a transistor section, a gate electrode pad, a gate connection member, a gate circuit section, and a casing. The transistor section includes a drain electrode, a source electrode and a gate electrode. The transistor section and the gate electrode pad are provided on a semiconductor substrate. The gate connection member connects a gate terminal and the gate electrode pad. The gate circuit section connects the gate electrode pad and the gate electrode, and includes a parallel circuit with a capacitor and a resistive element, a first connection member electrically connecting the capacitor to the gate electrode pad and a second connection member electrically connecting the capacitor to the gate electrode. The casing accommodates the transistor section, the gate electrode pad and the gate circuit section.

Abstract: An embodiment includes a first substrate, a second substrate, a first semiconductor element, a second semiconductor element and a third substrate. The third substrate is provided between the first substrate and the second substrate. The first semiconductor element is provided on the first substrate. The second semiconductor element is provided on the second substrate. The third substrate includes a first connection member and a second connection member that have thermal conductivity and penetrate through the third substrate. The first semiconductor element is thermally coupled to the first substrate and coupled through the first connection member to the second substrate. The second semiconductor element is thermally coupled to the second substrate and coupled through the second connection member to the first substrate.

Abstract: A voltage of a third gate electrode of a first semiconductor device transitions from a first off-voltage that is not more than a threshold voltage to a second off-voltage lower than the first off-voltage during a period from when a pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor device is input to a drive device to when any one of a first gate electrode, a second gate electrode, and a third gate electrode of a second semiconductor device reaches an on-voltage.

Abstract: The semiconductor drive device includes a third turn-off gate resistor that is electrically connected to the third gate electrode of each of the first semiconductor device and the second semiconductor device, and that is inserted into a third turn-off interconnect configured to apply a potential for turning off the third gate electrode. And R CGsoff ? Vth ? 3 min ? ( C CGsgc ) ? dv dt ( 1 ) where, in each of the first semiconductor device and the second semiconductor device, a threshold voltage of the third gate electrode being Vth3, a resistance value of the third turn-off gate resistor being RCGsoff, a minimum value of a capacitance between the third gate electrode and the collector electrode in a voltage dependence characteristic being min (CCGsgc), and a time displacement of a voltage at a time of turning on being dv/dt.

Abstract: A semiconductor module according to an embodiment includes a first conductor, a second conductor, a third conductor, a fourth conductor, a plurality of conductive bonding materials, and a plurality of multi-gate semiconductor devices. The multi-gate semiconductor device includes a semiconductor layer, a collector electrode. The multi-gate semiconductor device includes an emitter electrode, a first gate electrode, and a second gate electrode bonded to the second to fourth conductors via conductive bonding materials.