Patents by Inventor Kento Edakawa

Kento Edakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING MASK FOR DRY ETCHING AND MANUFACTURING METHOD OF MAGNETIC HEAD USING THE SAME METHOD
    Publication number: 20100078316
    Abstract: The present invention relates to a method for forming a dry etching mask. A plurality of aluminum oxide films are sequentially sputtered on a material to be dry etched in such a manner that etching rate with respect to reactive ion etching increases toward a lower layer. On a laminated film of the plurality of aluminum oxide films, there is formed a first mask that has etching resistance with respect to the reactive ion etching. Reactive ion etching is performed from above the first mask to form a second mask of the laminated film.
    Type: Application
    Filed: September 30, 2008
    Publication date: April 1, 2010
    Applicant: TDK CORPORATION
    Inventors: Kento EDAKAWA, Hiromichi Umehara, Noriaki Kasahara, Michitaka Nishiyama
  • ?-phase tantalum thin-film resistor and thin-film magnetic head with the resistor
    Patent number: 7643247
    Abstract: A thin-film resistor that has a stable electric resistance, the phase transformation to the ?-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a ?-phase tantalum film or an alloy film mainly containing ?-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the ?-phase crystal is most strongly oriented to the layer surface.
    Type: Grant
    Filed: December 5, 2006
    Date of Patent: January 5, 2010
    Assignee: TDK Corporation
    Inventors: Masashi Sano, Kento Edakawa, Nobuyoshi Morizumi, Norio Kiuchi
  • Beta-phase tantalum thin-film resistor and thin-film magnetic head with the resistor
    Publication number: 20070127161
    Abstract: A thin-film resistor that has a stable electric resistance, the phase transformation to the ?-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a ?-phase tantalum film or an alloy film mainly containing ?-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the ?-phase crystal is most strongly oriented to the layer surface.
    Type: Application
    Filed: December 5, 2006
    Publication date: June 7, 2007
    Inventors: Masashi Sano, Kento Edakawa, Nobuyoshi Morizumi, Norio Kiuchi