Abstract: A textured nanopattern is formed over a semiconductor structure. A laser anneal process can be performed by irradiating a laser beam on the textured nanopattern. The textured nanopattern may include semiconductor nanoparticles, such as silicon core and germanium-containing shell nanoparticles. The textured nanopattern enhances an absorption efficiency of the laser beam through at least one optical effect.

Abstract: A device structure includes an alternating stack of insulating layers and electrically conductive layers embedding a retro-stepped dielectric material portion. The electrically conductive layers include active electrically conductive layers located below a horizontal plane including a topmost surface of the retro-stepped dielectric material portion and at least one dummy electrically conductive layer overlying the retro-stepped dielectric material portion. Memory openings vertically extend through each of the active electrically conductive layers and are laterally spaced from each of the at least one dummy electrically conductive layer. Memory opening fill structures are located in the memory openings.

Abstract: A three-dimensional memory device includes a source-level structure located over a substrate, an alternating stack of insulating layers and electrically conductive layers located over the source-level structure, memory openings vertically extending through the alternating stack, and memory opening fill structures located in the memory openings. The source-level structure includes a lower source-level semiconductor layer including elongated grooves in an upper portion thereof, doped semiconductor source rails located within the elongated grooves, and an upper source-level semiconductor layer. The doped semiconductor source rails are laterally spaced apart from each other along a first horizontal direction and laterally extend along a second horizontal direction. Each of the memory opening fill structures includes a respective vertical stack of memory elements and a respective vertical semiconductor channel that contacts a respective one of the doped semiconductor source rails.

Abstract: A textured pattern is formed over a semiconductor structure. The textured pattern may comprise a semiconductor material including unactivated dopants, or may comprise a dielectric material overlying a semiconductor material portion including unactivated dopants. A laser anneal process can be performed by irradiating a laser beam on the textured pattern. The textured pattern enhances an absorption efficiency of the laser beam through at least one optical effect.

Abstract: A textured pattern is formed over a semiconductor structure. The textured pattern may comprise a semiconductor material including unactivated dopants, or may comprise a dielectric material overlying a semiconductor material portion including unactivated dopants. A laser anneal process can be performed by irradiating a laser beam on the textured pattern. The textured pattern enhances an absorption efficiency of the laser beam through at least one optical effect.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a memory film, a vertical semiconductor channel, and a semiconductor source cap structure which is at least partially laterally surrounded by the memory film and which contacts the vertical semiconductor channel, and a source layer contacting at least a first end surface segment of the semiconductor source cap structure.

Abstract: A three-dimensional memory device includes a source-level structure located over a substrate, an alternating stack of insulating layers and electrically conductive layers located over the source-level structure, memory openings vertically extending through the alternating stack, and memory opening fill structures located in the memory openings. The source-level structure includes a lower source-level semiconductor layer including elongated grooves in an upper portion thereof, doped semiconductor source rails located within the elongated grooves, and an upper source-level semiconductor layer. The doped semiconductor source rails are laterally spaced apart from each other along a first horizontal direction and laterally extend along a second horizontal direction. Each of the memory opening fill structures includes a respective vertical stack of memory elements and a respective vertical semiconductor channel that contacts a respective one of the doped semiconductor source rails.