Abstract: A mechanism for radiation detection is disclosed. An integrated circuit usable in detecting radiation includes a plurality of readout circuits is described. A readout circuit of the plurality of readout circuits includes an integration capacitor and an averaging capacitor. The integration capacitor is coupled with a pixel of a photodetector pixel array. The pixel has a pixel area. An available area less than the pixel area is usable for layout of the integration capacitor. The integration capacitor has a capacitor area less than the available area. The averaging capacitor has an averaging capacitance greater than the integration capacitance of the integration capacitor. In some aspects, the integrated circuit further includes at least one cascaded averaging circuit coupled with the averaging capacitor.

Abstract: A mechanism for radiation detection is disclosed. An integrated circuit usable in detecting radiation includes a plurality of readout circuits is described. A readout circuit of the plurality of readout circuits includes an integration capacitor and an averaging capacitor. The integration capacitor is coupled with a pixel of a photodetector pixel array. The pixel has a pixel area. An available area less than the pixel area is usable for layout of the integration capacitor. The integration capacitor has a capacitor area less than the available area. The averaging capacitor has an averaging capacitance greater than the integration capacitance of the integration capacitor. In some aspects, the integrated circuit further includes at least one cascaded averaging circuit coupled with the averaging capacitor.

Abstract: A mechanism for radiation detection is disclosed. An integrated circuit usable in detecting radiation includes a plurality of readout circuits is described. A readout circuit of the plurality of readout circuits includes an integration capacitor and an averaging capacitor. The integration capacitor is coupled with a pixel of a photodetector pixel array. The pixel has a pixel area. An available area less than the pixel area is usable for layout of the integration capacitor. The integration capacitor has a capacitor area less than the available area. The averaging capacitor has an averaging capacitance greater than the integration capacitance of the integration capacitor. In some aspects, the integrated circuit further includes at least one cascaded averaging circuit coupled with the averaging capacitor.

Abstract: The present disclosure provides a current generation circuit. In one aspect, the circuit includes a current source transistor and a current sink transistor connected to the current source transistor in series, with respective sources of the current source and sink transistors being connected with each other at a common node. A voltage difference between respective gates of the current source and sink transistors defines a current value flowing through the series, the voltage difference being variable such that the current value is either time-dependent or time-independent. Respective drains of the current source and sink transistors provide a high resistance output necessary to provide a current source or sink function thereby rejecting influence of drain variation or error on the current value.

Abstract: The present disclosure provides an analog counter circuit for use in a minimal-sized circuitry. The analog counter circuit of the present disclosure can provide much higher resolution versus power consumption and layout area as compared to conventional digital counters. The analog counter circuit of the present disclosure can also provide much better bias supply management, step accuracy, multi-element step uniformity and lower supply spiking as compared to conventional analog counter architectures. The compact size of the disclosed counter circuit allows better integration of arrayed elements, such as, an array of image sensing pixels or an array of artificial neurons.

Abstract: The present disclosure provides a delta-sigma modulator circuit for use in a pixelated image sensor or a readout integrated circuit. In one aspect, the modulator circuit includes a dynamic resistance element configured to have a variable resistance that changes in accordance with a voltage difference across the dynamic resistance element.

Abstract: The present disclosure provides a delta-sigma modulator circuit for use in a pixelated image sensor or a readout integrated circuit. In one aspect, the modulator circuit includes a dynamic resistance element configured to have a variable resistance that changes in accordance with a voltage difference across the dynamic resistance element.

Abstract: Methods and Systems for calibrating a Single Ramp Multiple Slope Analog to Digital Converter (SRMS ADC), the ADC including a counter and a plurality N of charge and discharge elements of different time constant i.e. slope, wherein the relationships between slopes is defined as a function of the shallowest slope SN such that S1=K1·SN, S2=K2·SN, . . . SN-1=KN-1·SN-1 where the K values are integers, and the code count for conversion is C=K1·C1+K2·C2+ . . . KN-1·CN-1+CN where each Ci represents an observed counts per each slope for a conversion, including; sampling for a first calibration pass a voltage with the ADC, discharging the voltage on the steepest slope for a number of counter counts C11, charging and discharging on the remaining slopes up to K2 to KN-1 for a number of counts per slope, Ci1 e.g.

Abstract: Pixel Front end circuits particularly applicable to photodetectors requiring wide bias ranges and/or with high background currents. In various versions, wide bias ranges, short protection, and background current subtraction, both predetermined and automatically sampled, are disclosed.

Abstract: Pixel Front end circuits particularly applicable to photodetectors requiring wide bias ranges and/or with high background currents. In various versions, wide bias ranges, short protection, and background current subtraction, both predetermined and automatically sampled, are disclosed.

Abstract: A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate.

Abstract: A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate.

Abstract: A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate.

Abstract: A light-sensing pixel is described that includes more than one detector element, each of which is sensitive to a range of wavelengths of the electromagnetic spectrums. The detectors are arranged in a readout circuit that can be constructed on a monolithic semiconductor product such that one or more of the detectors can be switched on or off to include or exclude an output contribution from said detectors and enhance the response of the pixel. Also, the detectors can included a laser-treated semiconductor sensor for efficient sensing of radiation in one or more regions of the spectrum. Arrays and imaging products using such pixels are disclosed.

Abstract: A pixel for detecting at least a portion of the electromagnetic spectrum may be provided. The pixel includes a detector element for detecting at least a portion of the electromagnetic spectrum, a bias point coupled to an output of the detector element for applying a biasing voltage to the detector element and capable of affecting the electrical output of the first detector element, an interface-trap charge pump coupled to the output of the bias point for charge pumping current from the detector, a collection point coupled to the output of the bias point for accumulating an electrical output of the detector element, and an output point for providing an electrical output of the pixel.

Abstract: A pixel for detecting at least a portion of the electromagnetic spectrum may be provided. The pixel includes a detector element for detecting at least a portion of the electromagnetic spectrum, a bias point coupled to an output of the detector element for applying a biasing voltage to the detector element and capable of affecting the electrical output of the first detector element, an interface-trap charge pump coupled to the output of the bias point for charge pumping current from the detector, a collection point coupled to the output of the bias point for accumulating an electrical output of the detector element, and an output point for providing an electrical output of the pixel.

Abstract: A light-sensing pixel is described that includes more than one detector element, each of which is sensitive to a range of wavelengths of the electromagnetic spectrums. The detectors are arranged in a readout circuit that can be constructed on a monolithic semiconductor product such that one or more of the detectors can be switched on or off to include or exclude an output contribution from said detectors and enhance the response of the pixel. Also, the detectors can included a laser-treated semiconductor sensor for efficient sensing of radiation in one or more regions of the spectrum. Arrays and imaging products using such pixels are disclosed.