Abstract: A light emitting device comprising: a base material including a first main surface and a second main surface, and a first end portion and a second end portion; a light emitting element mounted on the first main surface of the base material and including a first electrode and a second electrode; a first electrode terminal and a second electrode terminal; a covering material; and a sealing material that seals the light emitting element, wherein the first electrode terminal is formed to extend in a first direction, wherein the second electrode terminal is formed to be separated from the first electrode terminal by a distance, wherein the covering material includes: a first covering material that partially covers the first electrode terminal; and a second covering material that partially covers the second electrode terminal, and wherein the first covering material and the second covering material are formed to be separated.

Abstract: A semiconductor light-emitting device includes: a substrate with a wiring formed thereon; and a semiconductor light-emitting element. The substrate has first and second main surfaces in its thickness direction, first and second side surfaces in a first direction, third and fourth side surfaces in a second direction, and a first concave groove formed between the first and the third side surfaces. The first side surface has a first edge in contact with the first concave groove, the second side surface has a second edge, and the third side surface has a third edge in contact with the first concave groove and a fourth edge. The wiring includes a first groove wiring formed in the first concave groove and a first distance between the first edge and the third edge is larger than a second distance between the second edge and the fourth edge.

Abstract: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

Abstract: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

Abstract: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

Abstract: A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

Abstract: An elastic wave device includes a first IDT electrode on a first main surface of a LiNbO3 substrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.

Abstract: A surface acoustic wave (SAW) sensor includes a surface acoustic wave material and a comb-teeth electrode. The surface acoustic wave material is to be arranged at a place where the surface acoustic wave material is distorted by physical quantity such as stress. The comb-teeth electrode is arranged on the surface of the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic wave material. The surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board.

Abstract: An elastic wave device includes a first IDT electrode on a first main surface of a LiNbO3 substrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.

Abstract: A surface acoustic wave (SAW) sensor includes a surface acoustic wave material and a comb-teeth electrode. The surface acoustic wave material is to be arranged at a place where the surface acoustic wave material is distorted by physical quantity such as stress. The comb-teeth electrode is arranged on the surface of the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic wave material. The surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.

Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.

Abstract: A surface acoustic wave device includes a pair of reflectors and an interdigital transducer having a cross electrode having a interdigitated portion and a dummy portion and a dummy electrode. The dummy electrode has a length different from the length of the dummy portion of the cross electrode arranged adjacent to the dummy electrode.

Abstract: A piezoelectric boundary acoustic wave (PBAW) device includes a slotted dielectric body disposed over one surface of a piezoelectric body and electrodes forming an IDT at the interface between the piezoelectric body and the dielectric body. The thickness of the electrode is set so that the acoustic velocity of the boundary acoustic waves is less than acoustic waves propagating in the piezoelectric body.

Abstract: An acoustic wave device includes a ladder-type filter in which resonators are connected in a ladder configuration. In the acoustic wave device, series-connected resonators are connected in a parallel line in the ladder-type filter, and the resonators connected in the parallel line have mutually different resonance frequencies.

Abstract: A surface acoustic wave device includes a pair of reflectors and an interdigital transducer having a cross electrode having a interdigitated portion and a dummy portion and a dummy electrode. The dummy electrode has a length different from the length of the dummy portion of the cross electrode arranged adjacent to the dummy electrode.

Abstract: An acoustic wave device includes a ladder-type filter in which resonators are connected in a ladder configuration. In the acoustic wave device, series-connected resonators are connected in a parallel line in the ladder-type filter, and the resonators connected in the parallel line have mutually different resonance frequencies.

Abstract: A surface acoustic wave filter capable of obtaining a low insertion loss and wide bandwidth characteristic is provided. The surface acoustic wave filter includes a piezoelectric substrate; a pair of reflective electrodes formed on the piezoelectric substrate; and a plurality of comb electrodes formed between the pair of reflective electrodes on the piezoelectric substrate, wherein, in regard to the neighboring two comb electrodes among the plurality of comb electrodes, an electrode pitch of one comb electrode is set so that continuously varying phases of surface acoustic waves respectively generated by the two comb electrodes are obtained in a gap opposite to an outermost finger electrode of the other neighboring comb electrode.

Abstract: A surface acoustic wave filter capable of obtaining a low insertion loss and wide bandwidth characteristic is provided. The surface acoustic wave filter includes a piezoelectric substrate; a pair of reflective electrodes formed on the piezoelectric substrate; and a plurality of comb electrodes formed between the pair of reflective electrodes on the piezoelectric substrate, wherein, in regard to the neighboring two comb electrodes among the plurality of comb electrodes, an electrode pitch of one comb electrode is set so that continuously varying phases of surface acoustic waves respectively generated by the two comb electrodes are obtained in a gap opposite to an outermost finger electrode of the other neighboring comb electrode.

Abstract: An electronic circuit device includes filters, and a 90-degree hybrid circuit connected to the filters. The 90-degree hybrid circuit may have first and second output terminals. The first terminal of the 90-degree hybrid circuit is connected to an input terminal of one of the filters, and the second terminal thereof is connected to an input terminal of another one of the filters. The 90-degree hybrid circuit may include at least one of phase lines and lumped constant circuit elements.