Abstract: A SAW device manufacturing method includes a piezoelectric ceramic substrate polishing step of polishing a first surface of the piezoelectric ceramic substrate, a support substrate polishing step of polishing a first surface of the support substrate, a bonding step of bonding the first surface of the piezoelectric ceramic substrate to the first surface of the support substrate to thereby form a stacked substrate, a grinding step of grinding a second surface of the piezoelectric ceramic substrate, and a vibration diffusion layer forming step of applying a laser beam to the stacked substrate in the condition where the focal point of the laser beam is positioned inside the piezoelectric ceramic substrate to thereby form a modified layer as a vibration diffusion layer inside the piezoelectric ceramic substrate.

Abstract: A wafer processing apparatus including a supporting unit having a frame fixing section fixing the frame, and a wafer table having a front side and a rear side, the front side including a supporting face supporting the wafer and a transparent plate, a liquid layer forming unit including a nozzle section and forming a layer of a liquid on the supporting face of the wafer table, an imaging unit including an imaging camera positioned adjacent to the rear side of the wafer table and opposite to the supporting face on the front side of the wafer table and an air blowing nozzle blowing air to a region between the wafer table and the adhesive sheet.

Abstract: A wafer processing method includes a liquid layer forming step of forming a layer of a liquid on a supporting face of a wafer table included in a supporting unit, a fixing step of placing a side of an adhesive sheet of the wafer on the wafer table on which the layer of the liquid has been formed, and fixing the wafer to the wafer table through the adhesive sheet, a detecting step of imaging the wafer with an imaging unit which is positioned opposite to the supporting face of the wafer table to thereby detect the division lines formed on the front side of the wafer, and a processing step of processing a portion on a back side of the wafer corresponding to each of the division lines.

Abstract: A method of manufacturing a substrate for an acoustic wave device includes: a substrate joining step of joining a piezoelectric material layer to a surface on one side of a support substrate; a grinding step of grinding the piezoelectric material layer; a removal amount map forming step of measuring in-plane thickness of the piezoelectric material layer by an optical thickness meter, and calculating a removal amount for the piezoelectric material layer for adjusting thickness variability of the piezoelectric material layer to or below a threshold on the basis of each coordinate in the plane, to form a removal amount map; a laser processing step of applying a pulsed laser beam of such a wavelength as to be absorbed in the piezoelectric material layer, to selectively remove the piezoelectric material layer, based on the removal amount map; and a polishing step of polishing the surface of the piezoelectric material layer.

Abstract: A wafer processing method includes a liquid layer forming step of forming a layer of a liquid on a supporting face of a wafer table included in a supporting unit, a fixing step of placing a side of an adhesive sheet of the wafer on the wafer table on which the layer of the liquid has been formed, and fixing the wafer to the wafer table through the adhesive sheet, a detecting step of imaging the wafer with an imaging unit which is positioned opposite to the supporting face of the wafer table to thereby detect the division lines formed on the front side of the wafer, and a processing step of processing a portion on a back side of the wafer corresponding to each of the division lines.

Abstract: A SAW device manufacturing method includes a piezoelectric ceramic substrate polishing step of polishing a first surface of the piezoelectric ceramic substrate, a support substrate polishing step of polishing a first surface of the support substrate, a bonding step of bonding the first surface of the piezoelectric ceramic substrate to the first surface of the support substrate to thereby form a stacked substrate, a grinding step of grinding a second surface of the piezoelectric ceramic substrate, and a vibration diffusion layer forming step of applying a laser beam to the stacked substrate in the condition where the focal point of the laser beam is positioned inside the piezoelectric ceramic substrate to thereby form a modified layer as a vibration diffusion layer inside the piezoelectric ceramic substrate.

Abstract: A method of manufacturing a substrate for an acoustic wave device includes: a substrate joining step of joining a piezoelectric material layer to a surface on one side of a support substrate; a grinding step of grinding the piezoelectric material layer; a removal amount map forming step of measuring in-plane thickness of the piezoelectric material layer by an optical thickness meter, and calculating a removal amount for the piezoelectric material layer for adjusting thickness variability of the piezoelectric material layer to or below a threshold on the basis of each coordinate in the plane, to form a removal amount map; a laser processing step of applying a pulsed laser beam of such a wavelength as to be absorbed in the piezoelectric material layer, to selectively remove the piezoelectric material layer, based on the removal amount map; and a polishing step of polishing the surface of the piezoelectric material layer.

Abstract: A grinding apparatus has a spindle, a first wheel mount fixed to the lower end of the spindle, and a first grinding wheel mounted on the first wheel mount. The first grinding wheel has a first base and first abrasive members arranged annularly along the outer circumference of the first base in the form of a ring. A second wheel mount inside the first wheel mount is vertically movable. A second grinding wheel is mounted on the second wheel mount in concentric relationship with the first grinding wheel. The second grinding wheel includes a second base having an outer diameter smaller than the inner diameter of the ring formed by the first abrasive members. A plurality of second abrasive members are arranged annularly along the outer circumference of the second base in the form of a ring. The second wheel mount moves forward and away from a chuck table.

Abstract: A wafer is formed by slicing a single crystal ingot and removing crystal strains remaining in a peripheral portion of the wafer. In the crystal strain removing step, a laser beam having such a wavelength as to be transmitted through the wafer is applied to the wafer from one side of the wafer in positions located along the margin of the wafer and spaced a predetermined distance inward from the margin, to cause growth of fine holes and amorphous regions shielding the fine holes, over the range from one side to the other side of the wafer, whereby shield tunnels are formed in an annular pattern. Then, an external force is applied to the wafer along the shield tunnels so as to break the wafer in the region of the shield tunnels, thereby removing the peripheral wafer portion where the crystal strains are remaining.

Abstract: A grinding apparatus has a spindle, a first wheel mount fixed to the lower end of the spindle, and a first grinding wheel mounted on the first wheel mount. The first grinding wheel has a first base and first abrasive members arranged annularly along the outer circumference of the first base in the form of a ring. A second wheel mount inside the first wheel mount is vertically movable. A second grinding wheel is mounted on the second wheel mount in concentric relationship with the first grinding wheel. The second grinding wheel includes a second base having an outer diameter smaller than the inner diameter of the ring formed by the first abrasive members. A plurality of second abrasive members are arranged annularly along the outer circumference of the second base in the form of a ring. The second wheel mount moves forward and away from a chuck table.

Abstract: A wafer is formed by slicing a single crystal ingot and removing crystal strains remaining in a peripheral portion of the wafer. In the crystal strain removing step, a laser beam having such a wavelength as to be transmitted through the wafer is applied to the wafer from one side of the wafer in positions located along the margin of the wafer and spaced a predetermined distance inward from the margin, to cause growth of fine holes and amorphous regions shielding the fine holes, over the range from one side to the other side of the wafer, whereby shield tunnels are formed in an annular pattern. Then, an external force is applied to the wafer along the shield tunnels so as to break the wafer in the region of the shield tunnels, thereby removing the peripheral wafer portion where the crystal strains are remaining.

Abstract: An etching device for supplying an etchant to the surface of a workpiece held on a rotating spinner table, which comprises a center portion supply nozzle for supplying the etchant to the rotation center portion of the workpiece held on the spinner table and a peripheral portion supply nozzle for supplying the etchant to an area between the rotation center portion and the periphery of the workpiece.