Patents by Inventor Kenya Otani

Kenya Otani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6757201
    Abstract: The invention facilitates to meet both of the mode of use that finds precedence in frequent rewrite to the nonvolatile memory and data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic. The controller enables an information storage operation to the nonvolatile memory cells, by means of erase and write processing through boosting of the voltage applied to the nonvolatile memory cells and clamping of the boosted voltage, and performs a selection control that selects the application interval of the boosted voltage applied during the information storage operation and so forth. This selection control enables utilizing the nonvolatile memory cells as temporary rewrite areas, and facilitates to meet both of the mode of use that finds precedence in data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic.
    Type: Grant
    Filed: January 22, 2003
    Date of Patent: June 29, 2004
    Assignees: Renesas Technology Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Yuki Matsuda, Kenya Otani, Minoru Kato, Takeo Kon
  • Patent number: 6687164
    Abstract: The invention facilitates to meet both of the mode of use that finds precedence in frequent rewrite to the nonvolatile memory and data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic. The controller enables an information storage operation to the nonvolatile memory cells, by means of erase and write processing through boosting of the voltage applied to the nonvolatile memory cells and clamping of the boosted voltage, and performs a selection control that selects the application interval of the boosted voltage applied during the information storage operation and so forth. This selection control enables utilizing the nonvolatile memory cells as temporary rewrite areas, and facilitates to meet both of the mode of use that finds precedence in data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic.
    Type: Grant
    Filed: April 29, 2003
    Date of Patent: February 3, 2004
    Assignees: Renesas Technology Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Yuki Matsuda, Kenya Otani, Minoru Kato, Takeo Kon
  • Patent number: 6683809
    Abstract: The invention facilitates to meet both of the mode of use that finds precedence in frequent rewrite to the nonvolatile memory and data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic. The controller enables an information storage operation to the nonvolatile memory cells, by means of erase and write processing through boosting of the voltage applied to the nonvolatile memory cells and clamping of the boosted voltage, and performs a selection control that selects the application interval of the boosted voltage applied during the information storage operation and so forth. This selection control enables utilizing the nonvolatile memory cells as temporary rewrite areas, and facilitates to meet both of the mode of use that finds precedence in data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic.
    Type: Grant
    Filed: April 29, 2003
    Date of Patent: January 27, 2004
    Assignees: Renesas Technology Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Yuki Matsuda, Kenya Otani, Minoru Kato, Takeo Kon
  • Publication number: 20030206444
    Abstract: The invention facilitates to meet both of the mode of use that finds precedence in frequent rewrite to the nonvolatile memory and data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic. The controller enables an information storage operation to the nonvolatile memory cells, by means of erase and write processing through boosting of the voltage applied to the nonvolatile memory cells and clamping of the boosted voltage, and performs a selection control that selects the application interval of the boosted voltage applied during the information storage operation and so forth. This selection control enables utilizing the nonvolatile memory cells as temporary rewrite areas, and facilitates to meet both of the mode of use that finds precedence in data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic.
    Type: Application
    Filed: April 29, 2003
    Publication date: November 6, 2003
    Applicants: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
    Inventors: Yuki Matsuda, Kenya Otani, Minoru Kato, Takeo Kon
  • Publication number: 20030202381
    Abstract: The invention facilitates to meet both of the mode of use that finds precedence in frequent rewrite to the nonvolatile memory and data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic. The controller enables an information storage operation to the nonvolatile memory cells, by means of erase and write processing through boosting of the voltage applied to the nonvolatile memory cells and clamping of the boosted voltage, and performs a selection control that selects the application interval of the boosted voltage applied during the information storage operation and so forth. This selection control enables utilizing the nonvolatile memory cells as temporary rewrite areas, and facilitates to meet both of the mode of use that finds precedence in data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic.
    Type: Application
    Filed: April 29, 2003
    Publication date: October 30, 2003
    Applicants: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
    Inventors: Yuki Matsuda, Kenya Otani, Minoru Kato, Takeo Kon
  • Publication number: 20030161191
    Abstract: The invention facilitates to meet both of the mode of use that finds precedence in frequent rewrite to the nonvolatile memory and data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic. The controller enables an information storage operation to the nonvolatile memory cells, by means of erase and write processing through boosting of the voltage applied to the nonvolatile memory cells and clamping of the boosted voltage, and performs a selection control that selects the application interval of the boosted voltage applied during the information storage operation and so forth. This selection control enables utilizing the nonvolatile memory cells as temporary rewrite areas, and facilitates to meet both of the mode of use that finds precedence in data retention during the power supply being cut off, and the mode of use that finds precedence in the data retention characteristic.
    Type: Application
    Filed: January 22, 2003
    Publication date: August 28, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Yuki Matsuda, Kenya Otani, Minoru Kato, Takeo Kon