Abstract: There is provided a water-soluble additive composition including a cyclic carboxylic acid, the water-soluble additive composition satisfying at least one of the following Conditions 1 to 4: (Condition 1) component (A) the cyclic carboxylic acid, which is other than the following component (B1), and component (B1) one or more selected from the group consisting of gallic acid and an ester thereof are included; (Condition 2) the total content of Na+ and NH4+ is equal to or more than 100 ppm and equal to or less than 5000 ppm with respect to the cyclic carboxylic acid; (Condition 3) the total inorganic ion content (excluding hydrogen ions and hydroxyl group ions) is equal to or more than 300 ppm and equal to or less than 5000 ppm with respect to the cyclic carboxylic acid; and (Condition 4) component (A) the cyclic carboxylic acid, which is other than the following component (B2), and component (B2) an amino acid are included.

Abstract: The medicinal product of the present invention contains, as an active ingredient, at least one of a cyclic carboxylic acid compound derived from a plant-derived saccharide and a microorganism, and a derivative thereof. Further, it is preferable that the cyclic carboxylic acid compound is a compound represented by Formula (1).

Abstract: A flip-chip semiconductor package includes a circuit board having a core layer and at least one buildup layer, a semiconductor device connected to the circuit board through a metal bump, and a cured member that is made of a sealing resin composition and enclosed between the semiconductor device and the circuit board. The coefficient of linear expansion at 25 to 75° C. of the cured member is 15 to 35 ppm/° C., the glass transition temperature of at least one buildup layer is 170° C. or more, and the coefficient of linear expansion of at 25 to 75° C. of the at least one buildup layer in the planar direction is 25 ppm or less. A highly reliable flip-chip semiconductor package, buildup layer material, core layer material, and sealing resin composition can be provided by preventing cracks and inhibiting delamination.

Abstract: A method for manufacturing a base material having a gold-plated metal fine pattern is disclosed, comprising the steps of preparing a base material having a supporting surface made of a resin; forming a primer resin layer having surface roughness of 0.5 ?m or less on the supporting surface, and forming a metal fine pattern thereon by an SAP process to obtain a base material having a metal fine pattern; and applying a gold-plating treatment to at least one part of a surface of the metal fine pattern; wherein the base material having a metal fine pattern is subjected to a palladium removal treatment in an optional stage before carrying out the gold-plating treatment.

Abstract: The invention offers technology for suppressing damage to semiconductor devices due to temperature changes. When flip-chip mounting a silicon chip on a buildup type multilayer substrate having a structure with a thinned core, a core having a small coefficient of thermal expansion is used in the multilayer substrate, and the coefficient of thermal expansion and glass transition point of the underfill are appropriately designed in accordance with the thickness and coefficient of thermal expansion of the core. By doing so, it is possible to relieve stresses inside the semiconductor package caused by deformation of the multilayer substrate due to temperature changes, and thereby to suppress damage to the semiconductor package due to temperature changes.

Abstract: A method for laminating a prepreg contributing to decrease in layer thickness and having high productivity, a method for producing a printed wiring board by the method for laminating the prepreg, and a prepreg roll used for the method for laminating the prepreg are provided.

Abstract: An object of the present invention is to provide an electroless nickel-palladium-gold plating method which is able, when performed on a plating target surface such as terminals of a printed wiring board, terminals of other electronic components, and other resin substrates with a fine metal pattern, to prevent abnormal metal deposition on a resin surface which is an undercoat and to provide a high-quality plated surface. Another object of the present invention is to provide a plated product with a high-quality plated surface, particularly such as an interposer and motherboard, and a semiconductor apparatus using the same.

Abstract: The invention provides a connecting structure for a flip-chip semiconductor package in which cracking and delamination are inhibited or reduced to improve reliability, and in which the potential range of designs is expanded for the inner circuitry of circuit boards and the inductance is reduced. The invention is a connecting structure for a flip-chip semiconductor package, including: a circuit board having a core layer and at least one build-up layer; a semiconductor element connected via metal bumps to the circuit board; and a sealing resin composition with which gaps between the semiconductor element and circuit board are filled, wherein a cured product of the sealing resin composition has a glass transition temperature between 60° C. and 150° C. and a coefficient of linear expansion from room temperature to the glass transition temperature being between 15 ppm/° C. and 35 ppm/° C., a cured product of the build-up layer has a the glass transition temperature of at least 170° C.

Abstract: A flip-chip semiconductor package includes a circuit board having a core layer and at least one buildup layer, a semiconductor device connected to the circuit board through a metal bump, and a cured member that is made of a sealing resin composition and enclosed between the semiconductor device and the circuit board. The coefficient of linear expansion at 25 to 75° C. of the cured member is 15 to 35 ppm/° C., the glass transition temperature of at least one buildup layer is 170° C. or more, and the coefficient of linear expansion of at 25 to 75° C. of the at least one buildup layer in the planar direction is 25 ppm or less. A highly reliable flip-chip semiconductor package, buildup layer material, core layer material, and sealing resin composition can be provided by preventing cracks and inhibiting delamination.

Abstract: The invention provides a connecting structure for a flip-chip semiconductor package in which cracking and delamination are inhibited or reduced to improve reliability, and in which the potential range of designs is expanded for the inner circuitry of circuit boards and the inductance is reduced. The invention is a connecting structure for a flip-chip semiconductor package, including: a circuit board having a core layer and at least one build-up layer; a semiconductor element connected via metal bumps to the circuit board; and a sealing resin composition with which gaps between the semiconductor element and circuit board are filled, wherein a cured product of the sealing resin composition has a glass transition temperature between 60° C. and 150° C. and a coefficient of linear expansion from room temperature to the glass transition temperature being between 15 ppm/° C. and 35 ppm/° C., a cured product of the build-up layer has a the glass transition temperature of at least 170° C.

Abstract: The invention offers technology for suppressing damage to semiconductor devices due to temperature changes. When flip-chip mounting a silicon chip on a buildup type multilayer substrate having a structure with a thinned core, a core having a small coefficient of thermal expansion is used in the multilayer substrate, and the coefficient of thermal expansion and glass transition point of the underfill are appropriately designed in accordance with the thickness and coefficient of thermal expansion of the core. By doing so, it is possible to relieve stresses inside the semiconductor package caused by deformation of the multilayer substrate due to temperature changes, and thereby to suppress damage to the semiconductor package due to temperature changes.