Abstract: Various implementations described herein are directed to a system and methods for generating timing data for an integrated circuit. In one implementation, the method may include generating first timing data for the integrated circuit, and the first timing data may be related to one or more variations of operating conditions for the integrated circuit. Further, the method may include extracting parameter values from the first timing data in association with the one or more variations of operating conditions. Further, the method may include generating second timing data for the integrated circuit, and the second timing data may be based on the extracted parameter values.

Abstract: Various implementations described herein are directed to a system and methods for generating timing data for an integrated circuit. In one implementation, the method may include generating first timing data for the integrated circuit, and the first timing data may be related to one or more variations of operating conditions for the integrated circuit. Further, the method may include extracting parameter values from the first timing data in association with the one or more variations of operating conditions. Further, the method may include generating second timing data for the integrated circuit, and the second timing data may be based on the extracted parameter values.

Abstract: A semiconductor memory storage device for storing data including: a plurality of storage cells, each storage cell including an access control device configured to provide the storage cell with access to or isolation from a data access port in response to an access control signal. Access control circuitry includes: access switching circuitry configured to connect a selected access control line to a voltage source; and feedback circuitry configured to feedback a change in voltage on the access control line to the access switching circuitry. The access control circuitry is configured to respond to a data access request signal to access a selected storage cell connected to a corresponding selected access control line in response to the feedback circuitry providing a feedback signal indicating that the access control line voltage has attained a predetermined value.

Abstract: A semiconductor memory storage device for storing data including: a plurality of storage cells, each storage cell including an access control device configured to provide the storage cell with access to or isolation from a data access port in response to an access control signal. Access control circuitry includes: access switching circuitry configured to connect a selected access control line to a voltage source; and feedback circuitry configured to feedback a change in voltage on the access control line to the access switching circuitry. The access control circuitry is configured to respond to a data access request signal to access a selected storage cell connected to a corresponding selected access control line in response to the feedback circuitry providing a feedback signal indicating that the access control line voltage has attained a predetermined value.

Abstract: A data storage cell having a data line configured to transmit a data value to and from the storage cell, a feedback loop configured to store the data value, a first access device to provide access between the data line and a first point in the feedback loop, a second access device to provide access between the data line and a second point in the feedback loop, the first access point being a less stable point in the feedback loop than the second access point such that a variation in a voltage at the first access point is more likely to disturb said data value stored in the feedback loop than a variation in voltage at the second access point.