Patents by Inventor Kenzi Orita

Kenzi Orita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a semiconductor device
    Patent number: 6673702
    Abstract: A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer made of a Group III nitride-based compound semiconductor on the first semiconductor layer.
    Type: Grant
    Filed: December 26, 2000
    Date of Patent: January 6, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kenzi Orita, Masahiro Ishida, Masaaki Yuri
  • Method for producing a semiconductor device
    Publication number: 20010021572
    Abstract: A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer made of a Group III nitride-based compound semiconductor on the first semiconductor layer.
    Type: Application
    Filed: December 26, 2000
    Publication date: September 13, 2001
    Applicant: Matsushita Electronics Corporation
    Inventors: Kenzi Orita, Masahiro Ishida, Masaaki Yuri