Patents by Inventor Kenzi Suzuki

Kenzi Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8999841
    Abstract: A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: April 7, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Tadahiro Ishizaka, Atsushi Gomi, Kenzi Suzuki, Tatsuo Hatano, Yasushi Mizusawa
  • Patent number: 8859422
    Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: October 14, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Tadahiro Ishizaka, Atsushi Gomi, Takara Kato, Osamu Yokoyama, Takashi Sakuma, Chiaki Yasumuro, Hiroyuki Toshima, Tatsuo Hatano, Yasushi Mizusawa, Masamichi Hara, Kenzi Suzuki
  • Publication number: 20140287163
    Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
    Type: Application
    Filed: June 6, 2014
    Publication date: September 25, 2014
    Inventors: Tadahiro ISHIZAKA, Atsushi GOMI, Takara FUKUSHIMA, Osamu YOKOYAMA, Takashi SAKUMA, Chiaki YASUMURO, Hiroyuki TOSHIMA, Tatsuo HATANO, Yasushi MIZUSAWA, Masamichi HARA, Kenzi SUZUKI
  • Publication number: 20130203250
    Abstract: A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
    Type: Application
    Filed: August 3, 2012
    Publication date: August 8, 2013
    Applicant: Tokyo Electron Limited
    Inventors: Tadahiro Ishizaka, Atsushi Gomi, Kenzi Suzuki, Tatsuo Hatano, Yasushi Mizusawa
  • Publication number: 20120196052
    Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
    Type: Application
    Filed: January 26, 2012
    Publication date: August 2, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tadahiro ISHIZAKA, Atsushi GOMI, Takara KATO, Osamu YOKOYAMA, Takashi SAKUMA, Chiaki YASUMURO, Hiroyuki TOSHIMA, Tatsuo HATANO, Yasushi MIZUSAWA, Masamichi HARA, Kenzi SUZUKI
  • Publication number: 20100045566
    Abstract: A satellite broadcast receiving converter includes a feedhorn to which a satellite broadcast radio wave is input, a circuit board on which a converting element for receiving and converting the satellite broadcast radio wave to an electric signal is mounted, and a support case which is provided on the periphery on the back end side of the feedhorn, and which supports and positions the circuit board at a position at which the satellite broadcast radio wave can be received. The feedhorn and the support case are made of synthetic resin formed by plating a surface of the synthetic resin with metal. At least the opening surface side surface and the inner side surface which serves as a waveguide path of the feedhorn are plated with metal. At least the inner side surface of the support case positioned between the inner wall of the feedhorn and a ground pattern of the circuit board is plated with metal.
    Type: Application
    Filed: March 18, 2008
    Publication date: February 25, 2010
    Applicant: MASPRODENKOH KABUSHIKIKAISHA
    Inventors: Takehito Kuno, Koji Yokoi, Kenzi Suzuki
  • Publication number: 20100026598
    Abstract: A satellite broadcast receiving converter is provided with a feedhorn to which a satellite broadcast wave is input, a circuit board on which a converting circuit to convert the satellite broadcast wave to a receiving signal is formed, and a converter case disposed on a back end side of the feedhorn to support the circuit board. The converter case is comprised of two case members configured to cover and shield the front and back surfaces of the circuit board, and to be able to hold the circuit board. A first case member of the two case members is integrally formed with the feedhorn.
    Type: Application
    Filed: March 17, 2008
    Publication date: February 4, 2010
    Applicant: MASPRODENKOH KABUSHIKIKAISHA
    Inventors: Koji Yokoi, Takehito Kuno, Kenzi Suzuki, Toshihiro Sugiura
  • Patent number: 7514384
    Abstract: The present invention relates to an active oxygen developing substance composed of an aluminosilicate obtained by heating hydrogarnet as a precursor substance at 700° C. or higher; an aluminosilicate catalyst supporting cobalt oxide, produced by supporting cobalt oxide on the surface of the aluminosilicate; a method for manufacturing these; and applications of these as oxidation catalysts, solid electrolytes, oxygen occlusion carriers, and so forth.
    Type: Grant
    Filed: August 20, 2003
    Date of Patent: April 7, 2009
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Kenzi Suzuki, Satoru Fujita
  • Patent number: 7025947
    Abstract: The present invention provides a method of producing a CuZnAlZr oxide catalyst consisting of reacting an aqueous NaOH solution and aqueous Na2CO3 solution with a mixture of aqueous solutions of each nitrate of Cu, Zn, Al, and Zr, producing a precipitate by coprecipitation, aging, filtering, washing and drying this precipitate to prepare a catalyst precursor consisting of a CuZnAlZr layered double hydroxide, and then obtaining a CuZnAlZr oxide by calcining this precursor in an air ambient atmosphere, a CuZnAlZr oxide catalyst, a CuZnZrCe oxide catalyst, a CoCuZnAl oxide catalyst for producing hydrogen by oxidative steam reforming a methanol, and methods of producing hydrogen gas consisting of converting methanol to hydrogen gas by oxidative steam reforming in the presence of air and steam using these oxide catalysts.
    Type: Grant
    Filed: July 26, 2004
    Date of Patent: April 11, 2006
    Assignee: Japan as represented by the Seccretary of Agency of Industrial Science and Technolopgy
    Inventors: Kenzi Suzuki, Velu Subramani, Toshihiko Osaki
  • Publication number: 20060045834
    Abstract: The present invention relates to an active oxygen developing substance composed of an aluminosilicate obtained by heating hydrogarnet as a precursor substance at 700° C. or higher; an aluminosilicate catalyst supporting cobalt oxide, produced by supporting cobalt oxide on the surface of the aluminosilicate; a method for manufacturing these; and applications of these as oxidation catalysts, solid electrolytes, oxygen occlusion carriers, and so forth.
    Type: Application
    Filed: August 20, 2003
    Publication date: March 2, 2006
    Applicant: National Inst. of Adv. Industrial Sci and Tech
    Inventors: Kenzi Suzuki, Satoru Fujita
  • Publication number: 20050002858
    Abstract: The present invention provides a method of producing a CuZnAlZr oxide catalyst consisting of reacting an aqueous NaOH solution and aqueous NACO3 solution with a mixture of aqueous solutions of each nitrate of Cu, Zn, Al, and Zr, producing a precipitate by coprecipitation, aging, filtering, washing and drying this precipitate to prepare a catalyst precursor consisting of a CuZnAlZr layered double hydroxide, and then obtaining a CuZnAlZr oxide by calcining this precursor in an air ambient atmosphere, a CuZnAlZr oxide catalyst, a CuZnZrCe oxide catalyst, a CoCuZnAl oxide catalyst for producing hydrogen by oxidative steam reforming of methanol, and methods of producing hydrogen gas consisting of converting methanol to hydrogen gas by oxidative steam reforming in the presence of air and steam using these oxide catalysts.
    Type: Application
    Filed: July 26, 2004
    Publication date: January 6, 2005
    Applicant: Japan as Rep, by Sec of Agncy of Ind Sci and Tech
    Inventors: Kenzi Suzuki, Velu Subramani, Toshihiko Osaki
  • Publication number: 20020051747
    Abstract: The present invention provides a method of producing a CuZnAlZr oxide catalyst consisting of reacting an aqueous NaOH solution and aqueous NACO3 solution with a mixture of aqueous solutions of each nitrate of Cu, Zn, Al, and Zr, producing a precipitate by coprecipitation, aging, filtering, washing and drying this precipitate to prepare a catalyst precursor consisting of a CuZnAlZr layered double hydroxide, and then obtaining a CuZnAlZr oxide by calcining this precursor in an air ambient atmosphere, a CuZnAlZr oxide catalyst, a CuZnZrCe oxide catalyst, a CoCuZnAl oxide catalyst for producing hydrogen by oxidative steam reforming of methanol, and methods of producing hydrogen gas consisting of converting methanol to hydrogen gas by oxidative steam reforming in the presence of air and steam using these oxide catalysts.
    Type: Application
    Filed: December 5, 2000
    Publication date: May 2, 2002
    Applicant: Japan as represented by Secretary of Agency of Industrial Science and Techonlogy
    Inventors: Kenzi Suzuki, Velu Subramani, Toshihiko Osaki
  • Patent number: 5667561
    Abstract: Selective separation and recovery of gaseous components of hot waste gas of combustion containing carbon dioxide is attained by causing the hot waste gas to contact an adsorbent containing as a substantial main component thereof an inorganic solid substance exhibiting surface basicity and inducing adsorption of the gaseous components of the hot waste gas on the adsorbent and then selectively separating the adsorbed gaseous components by virtue of differences in retention time among the gaseous components on the adsorbent.
    Type: Grant
    Filed: January 16, 1996
    Date of Patent: September 16, 1997
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Kenzi Suzuki, Keiichi Inukai
  • Patent number: 5662726
    Abstract: A mixed gas consisting of carbon dioxide and nitrogen is separated into the component gases by a method which comprises treating sepiolite with nitric acid, subjecting the treated sepiolite to an ion-exchange treatment thereby exchanging the cationic metal present in the treated sepiolite with Mg ions, heating the sepiolite resulting from the ion-exchange treatment, and exposing the ultimately prepared sepiolite to the mixed gas.
    Type: Grant
    Filed: March 5, 1996
    Date of Patent: September 2, 1997
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Masakazu Horio, Kenzi Suzuki, Shinji Tomura, Keiichi Inukai
  • Patent number: 5653785
    Abstract: Separation of nitrogen and carbon dioxide is accomplished by a method using as a separating material one member selected from the group consisting of sepiolite in the unmodified form, sepiolite which has been heat-treated, and sepiolite which has had part or the whole of the exchangeable cation thereof replaced with zinc ion and which has been subsequently subjected to a heat treatment.
    Type: Grant
    Filed: May 28, 1996
    Date of Patent: August 5, 1997
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Masakazu Horio, Kenzi Suzuki, Toshiaki Mori, Keiichi Inukai, Shinji Tomura
  • Patent number: 5612269
    Abstract: An interlayer cross-linked clay used in a hydrothermal reaction is enabled to remain stable in the hydrothermal treatment by forming a suspension of the interlayer cross-linked clay in combination with an organic compound. The interlayer cross-linked clay used in the hydrothermal reaction under these conditions has carbon deposited on the pillars of the clay and remains stable when it is used in other hydrothermal reactions.
    Type: Grant
    Filed: August 30, 1995
    Date of Patent: March 18, 1997
    Assignee: Agency of Industrial Science and Technology, Ministry of International Trade & Industry
    Inventor: Kenzi Suzuki
  • Patent number: 5369069
    Abstract: A pillared clay possessing the ability to exchange cations is produced by a method which comprises heating a cation-exchange clay consisting of (1) silicate layers composed of octahedrons of alumina having part of the aluminum thereof substituted by magnesium or octahedrons of magnesia having part of the magnesium thereof substituted by lithium and tetrahedrons of silica and parallelly arranged in a state assuming negative electric charge and (2) exchangeable cations interposed between the silicate layers in a state retaining an electric charge balance with the negative electric charge of the silicate layers, thereby causing part of the exchangeable cations to be fixed in the silicate layers and inducing a decrease in the cation-exchange capacity of the clay, then cross-linking the interstices between the silicate layers of the clay, and thereafter causing liberation of the fixed cations.
    Type: Grant
    Filed: October 19, 1993
    Date of Patent: November 29, 1994
    Assignees: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Kenzi Suzuki, Toshiaki Mori
  • Patent number: 5366229
    Abstract: In a shooting game machine, a projector projects a shooting video image, in which a target appears, on a screen. A player may fire a laser gun to emit a light beam to the target on the screen. A video camera photographs the screen, irrespective of any display scanning of the projector, and outputs its picture signal to coordinate computing means. The coordinate computing means counts clock pulses, which are output from a pulse generator, during a period from when a vertical synchronous signal of the picture signal is output until a beam point signal is output, and divides the count value by a predetermined reference pulse number to compute and output the X coordinate and the Y coordinate of the beam point on the screen.
    Type: Grant
    Filed: May 17, 1993
    Date of Patent: November 22, 1994
    Assignee: Namco Ltd.
    Inventor: Kenzi Suzuki
  • Patent number: 5214012
    Abstract: An interlayer cross-linked smectite is produced by a method which includes the steps of preparing a smectite suspension containing a dissolved water-soluble macromolecular compound, adding a cationic hydroxide oligomer to the suspension thereby subjecting the exchangeable cation in the smectite to ion exchange, allowing the resultant smectite suspension to stand at a fixed temperature for a fixed time thereby allowing the cationic hydroxide oligomer of the smectite to age, separating a solid smectite from the resultant suspension, and heating the separated solid smectite. The interlayer interval of the produced smectite can be controlled by adjusting the amount of the cationic hydroxide oligomer.
    Type: Grant
    Filed: January 31, 1992
    Date of Patent: May 25, 1993
    Assignees: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
    Inventors: Kenzi Suzuki, Masakazu Horio, Hiroyuki Masuda, Toshiaki Mori
  • Patent number: 5087598
    Abstract: A pillared clay possessing a desired amount of pillers is produced by heating clay thereby changing the cation-exchange capacity owned by the clay and then adding a cation oligomer as a pillar precursor to the clay thereby causing the oligomer to exchange ion with the cation of the clay.
    Type: Grant
    Filed: August 17, 1989
    Date of Patent: February 11, 1992
    Assignees: Agency of Industrial Science, Ministry of International Trade & Industry
    Inventors: Kenzi Suzuki, Toshiaki Mori