Abstract: An input part of a charge transfer device includes first, second and third gate electrodes on a semiconductor substrate. The first gate electrode is located close to a charge injection region but far from a shift register part. The third gate electrode is located close to the shift register part but far from the charge injection region. The second gate electrode is located between the first and third gate electrodes, and comprises two partial electrodes which are formed in different forming steps. One of the partial electrodes which is far from the first gate electrode is preferably formed by the same forming step as the first gate electrode.