Abstract: A memory die includes dielectric isolation rails embedded within a substrate semiconductor layer, laterally spaced apart along a first horizontal direction, and each laterally extending along a second horizontal direction that is perpendicular to the first horizontal direction, and alternating stacks of insulating layers and electrically conductive layers located over the substrate semiconductor layer. The alternating stacks are laterally spaced apart along the second horizontal direction by line trenches that laterally extend along the first horizontal direction. Arrays of memory stack structures are provided such that each array of memory stack structures among the arrays of memory stack structures vertically extends through a respective alternating stack. Each of the memory stack structures includes a respective vertical stack of memory elements and a respective vertical semiconductor channel.

Abstract: A constant velocity joint of the cross groove type wherein the outer joint member and the inner joint member are provided with a plurality of guide grooves circumferentially inclining with respect to their rotational axes. Each of the guide grooves is divided into a groove center portion having a symmetric shape with respect to the center line of the groove, and a pair of groove end portions having an asymmetric shape with respect to the center line of the groove. The pair of groove end portions of each guide groove have a depth larger than that of the groove center portion thereof so that a grinding wheel is prevented from contacting with the groove end portions during grinding operations on the guide grooves, thereby achieving the grinding operations accurately.

Abstract: Rust inhibitors for electrical discharge machining solutions. Each preventive is composed of a fatty acid amide which has been obtained by dehydrating and condensing at least one fatty acid and at least one alkanolamine.