Patents by Inventor Keo-sung Park
Keo-sung Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230361142Abstract: Disclosed is an image sensor including a first substrate that has a first surface and a second surface opposite to the first substrate and including a pixel array region and an edge region, an antireflection structure on the second surface, a pixel separation part in the first substrate and separating pixels from each other, and a microlens array on the antireflection structure. The antireflection structure includes a first dielectric layer, a titanium oxide layer, a second dielectric layer, and a third dielectric layer that are sequentially stacked. The first dielectric layer, the second dielectric layer, and the third dielectric layer include different materials from each other. On the edge region, the third dielectric layer penetrates the second dielectric layer and the titanium oxide layer to contact with the first dielectric layer.Type: ApplicationFiled: February 17, 2023Publication date: November 9, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Hyeyeon PARK, Hyungkeun GWEON, Bumsuk KIM, Jieun KIM, Keo-Sung PARK, Yun Ki LEE, Hajin LIM, Taeksoo JEON, Jaesung HUR
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Publication number: 20220293649Abstract: A method of manufacturing an image sensor includes forming a first dopant region having a second conductivity type in a semiconductor substrate including first and second surfaces. The semiconductor substrate has a first conductivity type different from the second conductivity type. The method further includes forming a pixel isolation structure defining pixel regions in the semiconductor substrate, forming a vertical trench by patterning the first surface in each of the pixel regions, forming a mask pattern exposing each of the pixel regions on the first surface, in which the mask pattern includes a residual mask pattern filling at least a portion of the vertical trench, forming a second dopant region having the second conductivity type in the semiconductor substrate by using the mask pattern as an ion-implantation mask, in which the second dopant region is adjacent to the vertical trench, and forming a transfer gate electrode in the vertical trench.Type: ApplicationFiled: November 17, 2021Publication date: September 15, 2022Inventors: HAKYU CHOI, YONGSUK CHOI, KEO-SUNG PARK, DONGWOOK WON
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Patent number: 8624310Abstract: A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode.Type: GrantFiled: March 9, 2011Date of Patent: January 7, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Won-je Park, Chan Park, Young-hoon Park, Jae-ho Song, Jong-wook Hong, Keo-sung Park
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Publication number: 20110204468Abstract: Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.Type: ApplicationFiled: April 26, 2011Publication date: August 25, 2011Inventors: Jae-ho Song, Chan Park, Young-hoon Park, Sang-il Jung, Jong-wook Hong, Keo-sung Park, Eun-soo Kim, Won-je Park, Jin-Hyeong Park, Dae-cheol Seong, Won-jeong Lee, Pu-ra Kim
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Publication number: 20110163362Abstract: A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode.Type: ApplicationFiled: March 9, 2011Publication date: July 7, 2011Inventors: Won-je Park, Chan Park, Young-hoon Park, Jae-ho Song, Jong-wook Hong, Keo-sung Park
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Patent number: 7955924Abstract: Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.Type: GrantFiled: January 10, 2007Date of Patent: June 7, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-ho Song, Chan Park, Young-hoon Park, Sang-il Jung, Jong-wook Hong, Keo-sung Park, Eun-soo Kim, Won-je Park, Jin-Hyeong Park, Dae-cheol Seong, Won-jeong Lee, Pu-ra Kim
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Patent number: 7927902Abstract: A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode.Type: GrantFiled: May 16, 2007Date of Patent: April 19, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Won-je Park, Chan Park, Young-hoon Park, Jae-ho Song, Jong-wook Hong, Keo-sung Park
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Publication number: 20070267658Abstract: An image sensor and methods of fabricating the same are provided. An example method may include forming at least one gate on a substrate, forming first, second and third layers on the at least one gate, first etching the third layer with a first etching process, the second layer configured to be resistant to the first etching process, the first etching process reducing at least a portion of the third layer and exposing at least a portion of the second layer and second etching at least the exposed portion of the second layer with a second etching process other than the first etching process, the first layer configured to be resistant to the second etching process.Type: ApplicationFiled: May 14, 2007Publication date: November 22, 2007Inventors: Jae-Ho Song, Jong-Chae Kim, Jong-Wook Hong, Keo-Sung Park
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Publication number: 20070267666Abstract: A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode.Type: ApplicationFiled: May 16, 2007Publication date: November 22, 2007Inventors: Won-je Park, Chan Park, Young-hoon Park, Jae-ho Song, Jong-wook Hong, Keo-sung Park
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Publication number: 20070161140Abstract: Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.Type: ApplicationFiled: January 10, 2007Publication date: July 12, 2007Inventors: Jae-ho Song, Chan Park, Young-hoon Park, Sang-il Jung, Jong-wook Hong, Keo-sung Park, Eun-soo Kim, Won-je Park, Jin-Hyeong Park, Dae-cheol Seong, Won-jeong Lee, Pu-ra Kim