Abstract: Smart information retrieval is provided via artificial intelligence. Content stored in documents in a database is accessed and contextual chunks of individual ones of the documents are identified, wherein the contextual chunks include portions of content stored in the individual ones of the documents. Embeddings associated with the contextual chunks are generated and stored in a vector database. A plurality of relationships are defined among at least some of the contextual chunks and generates relational embeddings using the plurality of identified relationships. The relational embeddings are stored in a database. A query is received for information associated with at least some of the content and an embedding representing the query is generated. The embedding representing the query is transmitted to at least one large language model, and a response including at least some of the contextual chunks is received. The response is transmitted to a device associated with the query.

Abstract: A system for automatically checking seat dimension accuracy for a vehicle may include a storage unit configured to store therein seat design data at a time of designing an actually produced seat and seat scan data obtained by scanning the actually produced seat, a controller configured to determine whether the actually produced seat has been produced to match predesigned dimensions using the seat design data and the seat scan data stored in the storage unit, and an output unit configured to automatically output a result of determination by the controller in a specific form. The system and a method for checking seat dimension accuracy for a vehicle can automatically check whether an actually produced seat has been accurately produced to match designed seat dimensions through automatic comparison of scan data of the actually produced seat with seat design data, and automatically generate a checking result report.

Abstract: The present invention relates to a speaker diarization technology, and more specifically to, end-to-end speaker diarization system and method through transformer learning having an auxiliary loss-based residual connection to separate speakers by dividing the speakers for time interval, wherein the end-to-end speaker diarization system and method using an auxiliary loss can differentiate and separate speakers through speaker labeling based on the transformer learning using an auxiliary loss even if speaker speeches overlap in a multi-speaker environment.

Abstract: A system on chip includes a display serial interface (DSI) host device, a camera serial interface (CSI) host device, a first register, and a loopback control circuit. The first register is configured to store a first flag indicating whether the system on chip is operating in a loopback mode or a non-loopback mode. The loopback control circuit is configured to loop back data generated by the DSI host device to the CSI host device in response to the first flag indicating that the system on chip is operating in the loopback mode.

Abstract: A system for automatically checking seat dimension accuracy for a vehicle may include a storage unit configured to store therein seat design data at a time of designing an actually produced seat and seat scan data obtained by scanning the actually produced seat, a controller configured to determine whether the actually produced seat has been produced to match predesigned dimensions using the seat design data and the seat scan data stored in the storage unit, and an output unit configured to automatically output a result of determination by the controller in a specific form. The system and a method for checking seat dimension accuracy for a vehicle can automatically check whether an actually produced seat has been accurately produced to match designed seat dimensions through automatic comparison of scan data of the actually produced seat with seat design data, and automatically generate a checking result report.

Abstract: A header processing device includes an error detector, a controller, and a reallocator. The error detector detects an error in a header in a packet and outputs a header error detection result. The controller selects first and second information from the header based on information corresponding to a type of the header and the header error detection result. The reallocator merges the first and second information and generates a header with a common format different from a format of the header.

Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode.

Abstract: A method of fabricating a thin film transistor includes forming a substrate having first and second regions, a semiconductor layer pattern formed in the first region and the second region, and a first gate insulating layer pattern formed on a channel region of the semiconductor layer pattern of the first region. A second gate insulating layer is formed on the substrate, a first conductive layer pattern is formed above the channel region of the first region and above the semiconductor layer pattern of the second region, and an inter-layer insulating layer is formed on the substrate. A second conductive layer pattern is formed in the first region and above the first conductive layer pattern of the second region. The second conductive layer pattern of the first region is coupled to the semiconductor layer pattern of the first region through the second gate insulating layer and the inter-layer insulating layer.

Abstract: A header processing device includes an error detector, a controller, and a reallocator. The error detector detects an error in a header in a packet and outputs a header error detection result. The controller selects first and second information from the header based on information corresponding to a type of the header and the header error detection result. The reallocator merges the first and second information and generates a header with a common format different from a format of the header.

Abstract: A system on chip includes a display serial interface (DSI) host device, a camera serial interface (CSI) host device, a first register, and a loopback control circuit. The first register is configured to store a first flag indicating whether the system on chip is operating in a loopback mode or a non-loopback mode. The loopback control circuit is configured to loop back data generated by the DSI host device to the CSI host device in response to the first flag indicating that the system on chip is operating in the loopback mode.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract: A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

Abstract: A method of fabricating a thin film transistor includes forming a substrate having first and second regions, a semiconductor layer pattern formed in the first region and the second region, and a first gate insulating layer pattern formed on a channel region of the semiconductor layer pattern of the first region. A second gate insulating layer is formed on the substrate, a first conductive layer pattern is formed above the channel region of the first region and above the semiconductor layer pattern of the second region, and an inter-layer insulating layer is formed on the substrate. A second conductive layer pattern is formed in the first region and above the first conductive layer pattern of the second region. The second conductive layer pattern of the first region is coupled to the semiconductor layer pattern of the first region through the second gate insulating layer and the inter-layer insulating layer.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Abstract: A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: A thin film transistor including a substrate having first and second regions, a semiconductor layer pattern formed in the first region and the second region, and a first gate insulating layer pattern formed on a channel region of the semiconductor layer pattern of the first region. A second gate insulating layer is formed on the substrate, a first conductive layer pattern is formed above the channel region of the first region and above the semiconductor layer pattern of the second region, and an inter-layer insulating layer is formed on the substrate. A second conductive layer pattern is formed in the first region and above the first conductive layer pattern of the second region. The second conductive layer pattern of the first region is coupled to the semiconductor layer pattern of the first region through the second gate insulating layer and the inter-layer insulating layer.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.