Abstract: A semiconductor device includes a carrier with an interface layer applied over the carrier. The interface layer can include non-conductive paste or non-conductive film. A plurality of semiconductor die is mounted to the carrier and interface layer by pressing the semiconductor die to the carrier and interface layer for one second or less, and simultaneously thermal compression bonding multiple semiconductor die to the carrier and interface layer for 5-10 seconds. By pressing the semiconductor die to the interface layer for a short period of time and then simultaneously thermal compression bonding multiple semiconductor die to the interface layer for a second longer period of time, the overall throughput of die bonding increases to process more die per unit of time. An encapsulant is deposited over the semiconductor die. The carrier is removed and interconnect structure is formed over the semiconductor die and encapsulant.

Abstract: Methods of producing a semiconductor package using dual-sided thermal compression bonding includes providing a substrate having an upper surface and a lower surface. A first device having a first surface and a second surface can be provided along with a second device having a third surface and a fourth surface. The first surface of the first device can be coupled to the upper surface of the substrate while the third surface of the second device can be coupled to the lower surface of the substrate, the coupling occurring simultaneously to produce the semiconductor package.

Abstract: A semiconductor device includes a carrier with an interface layer applied over the carrier. The interface layer can include non-conductive paste or non-conductive film. A plurality of semiconductor die is mounted to the carrier and interface layer by pressing the semiconductor die to the carrier and interface layer for one second or less, and simultaneously thermal compression bonding multiple semiconductor die to the carrier and interface layer for 5-10 seconds. By pressing the semiconductor die to the interface layer for a short period of time and then simultaneously thermal compression bonding multiple semiconductor die to the interface layer for a second longer period of time, the overall throughput of die bonding increases to process more die per unit of time. An encapsulant is deposited over the semiconductor die. The carrier is removed and interconnect structure is formed over the semiconductor die and encapsulant.

Abstract: Methods of producing a semiconductor package using dual-sided thermal compression bonding includes providing a substrate having an upper surface and a lower surface. A first device having a first surface and a second surface can be provided along with a second device having a third surface and a fourth surface. The first surface of the first device can be coupled to the upper surface of the substrate while the third surface of the second device can be coupled to the lower surface of the substrate, the coupling occurring simultaneously to produce the semiconductor package.