Abstract: A method for processing a substrate includes arranging a substrate including masked portions and unmasked portions in a process chamber; creating plasma in a process chamber; supplying a passivation gas mixture that includes nitrogen or carbon to create a plasma passivation gas mixture; exposing a substrate to the plasma passivation gas mixture to create a passivation layer on the unmasked portions of the substrate; supplying a stripping gas mixture that includes oxygen to the plasma to create a plasma stripping gas mixture; exposing the substrate to the plasma stripping gas mixture to strip at least part of the masked portions and at least part of the unmasked portions; and repeating creating the passivation layer and the stripping to remove a predetermined amount of the masked portions.

Abstract: A technique for forming 3D semiconductor structure is disclosed. In one embodiment, a substrate having at least two vertically extending fins is provided. An insulating material is deposited in the trench between the fins. After planarization, an ion implant process is performed to change the properties of the insulating material, specifically, the implanted region has a higher etch rate than the remainder of the insulating material. This higher etch rate region is then removed. This process of implanting and removing can be repeated until the insulating material reaches the desired height. In some embodiments, the substrate may be subjected to an anneal process prior to the removal of the higher etch rate region. The Gaussian implant depth profile may change into a box-like implant depth profile during the anneal process via thermal diffusion.

Abstract: A method for processing a substrate includes arranging a substrate including masked portions and unmasked portions in a process chamber; creating plasma in a process chamber; supplying a passivation gas mixture that includes nitrogen or carbon to create a plasma passivation gas mixture; exposing a substrate to the plasma passivation gas mixture to create a passivation layer on the unmasked portions of the substrate; supplying a stripping gas mixture that includes oxygen to the plasma to create a plasma stripping gas mixture; exposing the substrate to the plasma stripping gas mixture to strip at least part of the masked portions and at least part of the unmasked portions; and repeating creating the passivation layer and the stripping to remove a predetermined amount of the masked portions.

Abstract: Processes for stripping high dose ion implanted photoresist while minimizing substrate loss. The processes generally include passivation of the substrate surface before and/or during a plasma mediated stripping process. By passivating the substrate surface before and/or during the plasma mediated stripping process, oxidation is substantially reduced during plasma stripping thereby leading to reduced substrate loss.