Abstract: A process for forming a seam construction on a substrate includes steps of: a) providing a first thread coated with a first curable resinous material; b) providing a second thread coated with a second curable resinous material; c) forming a stitch knot; and d) curing the stitch knot to chemically bond the first and second curable resinous materials together.

Abstract: The invention relates to an electronic component with Sn rich deposit layer on the part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It also relates to a process for plating an electronic component, so as to form a Sn rich deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained Sn rich deposit layer on the part for electric connection. As compared with the prior art, the invention can validly inhibit the whisker growth with low cost and reliable property.

Abstract: In a package, a heat slug, encapsulated by molding compound, encases an integrated circuit device (IC). In an example embodiment, a semiconductor package structure comprises a substrate having conductive traces and pad landings. The conductive traces have pad landings. An IC is mounted on the substrate. The IC has bonding pads. With conductive wires, the IC bonding pads are connected to the pad landings, which in turn, are connected to the conductive traces. A heat slug, having predetermined height, is disposed on the substrate surface. The heat slug includes a plurality of mounting feet providing mechanical attachment to the substrate. A cavity in the heat slug accommodates the IC. A plurality of first-size openings surrounds the IC. A second-size opening constructed from one of the first size-openings, is larger than the first-size opening. The second size-opening facilitates the introduction of molding compounds into the cavity of the heat slug.

Abstract: In a package, a heat slug, encapsulated by molding compound, encases an integrated circuit device (IC). In an example embodiment, a semiconductor package structure comprises a substrate having conductive traces and pad landings. The conductive traces have pad landings. An IC is mounted on the substrate. The IC has bonding pads. With conductive wires, the IC bonding pads are connected to the pad landings, which in turn, are connected to the conductive traces. A heat slug, having predetermined height, is disposed on the substrate surface. The heat slug includes a plurality of mounting feet providing mechanical attachment to the substrate. A cavity in the heat slug accommodates the IC. A plurality of first-size openings surrounds the IC. A second-size opening constructed from one of the first size-openings, is larger than the first-size opening. The second size-opening facilitates the introduction of molding compounds into the cavity of the heat slug.

Abstract: In a package, a heat slug, encapsulated by molding compound, encases an integrated circuit device (IC). In an example embodiment, a semiconductor package structure comprises a substrate having conductive traces and pad landings. The conductive traces have pad landings. An IC is mounted on the substrate. The IC has bonding pads. With conductive wires, the IC bonding pads are connected to the pad landings, which in turn, are connected to the conductive traces. A heat slug, having predetermined height, is disposed on the substrate surface. The heat slug includes a plurality of mounting feet providing mechanical attachment to the substrate. A cavity in the heat slug accommodates the IC. A plurality of first-size openings surrounds the IC. A second-size opening constructed from one of the first size-openings, is larger than the first-size opening. The second size-opening facilitates the introduction of molding compounds into the cavity of the heat slug.

Abstract: In a package, a heat slug, encapsulated by molding compound, encases an integrated circuit device (IC). In an example embodiment, a semiconductor package structure comprises a substrate (200) having conductive traces (235) and pad landings (265). The conductive traces have pad landings (265). An IC (230) is mounted on the substrate (200). The IC (230) has bonding pads (245). With conductive wires (225), the IC bonding pads (245) are connected to the pad landings (265), which in turn, are connected to the conductive traces (235). A heat slug (220), having predetermined height, is disposed on the substrate surface (200). The heat slug includes a plurality of mounting feet (210) providing mechanical attachment to the substrate. A cavity (220a) in the heat slug accommodates the IC. A plurality of first-size openings (215) surrounds the IC. A second-size opening (255) constructed from one of the first size-openings, is larger than the first-size opening.

Abstract: Zirconium-rich bulk metallic glass alloys include quinary alloys containing zirconium, aluminum, titanium, copper and nickel. The bulk metallic glass alloys may be provided as completely amorphous pieces having cross-sectional diameters of at least about 5 mm or even greater.

Abstract: The invention relates to an electronic component with Sn rich deposit layer on the part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It also relates to a process for plating an electronic component, so as to form a Sn rich deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained Sn rich deposit layer on the part for electric connection. As compared with the prior art, the invention can validly inhibit the whisker growth with low cost and reliable property.

Abstract: Zirconium-rich bulk metallic glass alloys include quinary alloys containing zirconium, aluminum, titanium, copper and nickel. The bulk metallic glass alloys may be provided as completely amorphous pieces having cross-sectional diameters of at least about 5 mm or even greater.

Abstract: The invention relates to a heat adjustment device. The heat adjustment device comprises a heat conductive substrate and a plurality of thermoelectric chips. The heat conductive substrate has a support surface. Each of the thermoelectric chips has a first surface and a second surface, wherein the second surfaces of the thermoelectric chips are fixed to the support surface of the heat conductive substrate, and the thermoelectric chips are electrically connected for providing a power to the thermoelectric chips so that the second surfaces of the thermoelectric chips give a temperature variation conducted to the heat conductive substrate.