Patents by Inventor Kerem Y. Camsari

Kerem Y. Camsari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for spin injection enhancement and method of making the same
    Patent number: 11417834
    Abstract: A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: August 16, 2022
    Assignee: Purdue Research Foundation
    Inventors: Shehrin Sayed, Vinh Quang Diep, Kerem Y Camsari, Supriyo Datta
  • Spin-transfer-torque synthetic anti-ferromagnetic switching device
    Patent number: 10790441
    Abstract: A switching device, comprising an anti-ferromagnet structure having an upper layer and a lower layer, the upper layer and lower layer anti-ferromagnetically coupled by an exchange coupling layer, the upper and lower layer formed of a similar material but having differing volumes, and wherein the device is configured to inject symmetrically spin-polarized currents through the upper and lower layers to achieve magnetic switching of the anti-ferromagnet structure.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: September 29, 2020
    Assignee: Purdue Research Foundation
    Inventors: Kerem Y. Camsari, Ahmed Zeeshan Pervaiz, Rafatul Faria, Esteban E Marinero-Caceres, Supriyo Datta
  • APPARATUS FOR SPIN INJECTION ENHANCEMENT AND METHOD OF MAKING THE SAME
    Publication number: 20200136024
    Abstract: A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 30, 2020
    Applicant: Purdue Research Foundation
    Inventors: Shehrin Sayed, Vinh Quang Diep, Kerem Y. Camsari, Supriyo Datta
  • Apparatus for spin injection enhancement and method of making the same
    Patent number: 10516098
    Abstract: A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: December 24, 2019
    Assignee: Purdue Research Foundation
    Inventors: Shehrin Sayed, Vinh Quang Diep, Kerem Y Camsari, Supriyo Datta
  • SPIN-TRANSFER-TORQUE SYNTHETIC ANTI-FERROMAGNETIC SWITCHING DEVICE
    Publication number: 20190081236
    Abstract: A switching device, comprising an anti-ferromagnet structure having an upper layer and a lower layer, the upper layer and lower layer anti-ferromagnetically coupled by an exchange coupling layer, the upper and lower layer formed of a similar material but having differing volumes, and wherein the device is configured to inject symmetrically spin-polarized currents through the upper and lower layers to achieve magnetic switching of the anti-ferromagnet structure.
    Type: Application
    Filed: March 14, 2017
    Publication date: March 14, 2019
    Applicant: Purdue Research Foundation
    Inventors: Kerem Y. Camsari, Ahmed Zeeshan Pervaiz, Rafatul Faria, Esteban E Marinero-Caceres, Supriyo Datta
  • APPARATUS FOR SPIN INJECTION ENHANCEMENT AND METHOD OF MAKING THE SAME
    Publication number: 20180182954
    Abstract: A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.
    Type: Application
    Filed: December 22, 2017
    Publication date: June 28, 2018
    Applicant: Purdue Research Foundation
    Inventors: Shehrin Sayed, Vinh Quang Diep, Kerem Y. Camsari, Supriyo Datta