Patents by Inventor Kern-Hunt Ang

Kern-Hunt Ang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Anti-fuse structure employing metal silicide/doped polysilicon laminate
    Publication number: 20050110113
    Abstract: An anti-fuse structure and a method for forming the anti-fuse structure employ a substrate having formed therein a contact region. A metal silicide layer is formed over and electrically connected with the contact region. A first doped polysilicon layer is formed upon the metal silicide layer. An anti-fuse material layer is formed upon the first doped polysilicon layer. A second doped polysilicon layer is formed upon the anti-fuse material layer. The first doped polysilicon layer and the second doped polysilicon layer may be formed with the same or complementary dopant polarity, the latter providing an anti-fuse diode.
    Type: Application
    Filed: November 24, 2003
    Publication date: May 26, 2005
    Inventors: Chih-Ming Lin, Kern-Hunt Ang, Chia-Chen Liu