Abstract: A tandem OLED display is provided, including a substrate backplane, an anode layer, at least two stacked OLED layers, each OLED layer comprising a plurality of pixels, at least one charge generation layer (CGL), wherein each CGL is disposed between two adjacent stacked OLED layers, and a cathode layer. At least one of the CGLs is patterned wherein a pattern provides gaps between each of the plurality of pixels.

Abstract: A tandem OLED device is provided, including an anode, a cathode, at least two electroluminescent units disposed between the anode and the cathode, and an alloy thin film disposed between the two electroluminescent units.

Abstract: Systems and methods for performing direct patterning of a material on a substrate with high fidelity to a desired pattern are presented. A pattern of apertures of a shadow mask is compensated to accommodate a range of propagation angles in a vapor plume used to deposit material onto the substrate through the shadow mask. A shadow mask in accordance with the present disclosure includes an aperture pattern in which aperture position is shifted inward toward the center of the shadow mask by an amount based on the distance of the aperture from the center of the shadow mask. As a result, vaporized material passing through an aperture at a non-normal angle deposits onto the substrate at its proper desired location.

Abstract: A direct patterning deposition mask for OLED deposition is provided where the mask includes a sapphire substrate; and a Silicon Nitride (SiN) membrane. The sapphire substrate thickness may be between 0.7 and 2 mm. The sapphire substrate may have a diameter in the range of 200 mm diameter to 300 mm diameter. Warpage of the substrate is preferably less than <10 um.

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: A system for deposition of evaporated material on a substrate is provided. The substrate has a central axis. The system includes an evaporation vacuum chamber, at least one nozzle assembly, and a shadow mask. The nozzle assembly has a three-point plurality of point evaporation sources disposed adjacent to the central axis of the substrate and at a distance from the substrate whereby the nozzle assembly provides for molecules of evaporated material to arrive at the substrate at an incident angle of less than or equal to 5 degrees.

Abstract: A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor press

Abstract: A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.

Abstract: A shadow mask that includes compensation layer operative for at least partially correcting gravity-induced sag of a shadow-mask membrane is disclosed. The compensation layer is formed on a surface of the shadow-mask membrane such that the compensation layer is characterized by a residual stress that gives rise to a first bending moment in the membrane, where the first bending moment is directed in the opposite direction to a second bending moment in the membrane that is induced by the effect of gravity.

Abstract: In a method for designing and fabricating a micro-lens array, a design is finalized by varying certain features of a shadow mask, varying a distance between a source of lens-forming material and the shadow mask, and varying other parameters until the features and distances result in the formation of a micro-lens having desired shape, etc. A shadow mask in accordance with the design is then fabricated and is appropriately positioned with respect to a micro-display and a source of lens-forming material. A plume of lens-forming material is then generated under reduced pressure and which propagates toward the shadow mask, directly patterning the micro-lenses on sub-pixels of the micro-display.

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: Aspects of the present disclosure are directed to systems, method, and structures including a high-resolution shadow mask with tapered aperture/pixel openings that advantageously overcomes problems plaguing the prior art namely shadowing, sagging, and fragility.

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor press

Abstract: A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor press

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: An apparatus and method for performing material deposition on an active-matrix organic light emitting diode (AMOLED) display array on a substrate, includes aligning a shadow mask to a first position relative to the substrate; initially depositing a first material through the shadow mask onto the substrate at a first material deposition position relative to the first position of the aligned shadow mask and at a first deposition height; incrementing the position the shadow mask to a second position relative to the first material deposition position; and subsequently depositing one of the first material or a second material through the shadow mask onto the substrate at a second material deposition position relative to the first material deposition position, wherein the second material deposition position having an identical deposition pattern as the first material deposition position on account of the shadow mask.

Abstract: A method of active alignment of a shadow mask to a substrate includes a first alignment by moving the shadow mask and the substrate a first distance in a vertical direction, capturing a first alignment image, determining at least one of a first correction distance and a first rotational correction angle, and aligning the shadow mask and the substrate by moving the first correction distance and rotating the first rotational correction angle. The method further includes performing a first material deposition process on the substrate and continuously capturing a first series of alignment images during the generation of the first material deposition flow. During the generation of the first material deposition flow the first series of alignment images are analyzed to determine a second correction distance and a second rotational correction angle and determining whether second distance and/or rotational correction angle is greater than or equal to a predetermined value to cause a second alignment process to occur.

Abstract: A tandem Organic Light Emitting Diode (OLED) apparatus and method of fabricating the same, where the tandem OLED apparatus includes a buffer assisted charge generation layer having a junction of a p-type doped semiconductor layer and an n-type doped semiconductor layer, where a hole buffer layer and an electron buffer layer pair surrounding the junction of the p-type and n-type doped semiconductor layers. The OLED apparatus further includes a first OLED emissive layer and a second OLED emissive layer pair surrounding the buffer assisted charge generation layer, and a cathode and anode layer pair further surrounding the first and second OLED emissive layer pair.

Abstract: A direct-deposition system capable of forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. As a result, the vaporized atoms that pass through the shadow mask exhibit little or no lateral spread (i.e., feathering) after passing through its apertures and the material deposits on the substrate in a pattern that has very high fidelity with the aperture pattern of the shadow mask.