Abstract: A semiconductor component has a cavity formed in a monocrystalline silicon substrate. The wall of the cavity is covered by a cover layer, at least in an upper collar region, and a covering layer is then applied to the surface of the silicon substrate using a selective epitaxial growth method. The cavity is thereby covered in the process. The method is physically simple and can be carried out cost-effectively. In particular, the described method can be used in order to cover a trench prior to high-temperature processes during the production of a DRAM memory, and to open the trench once again after the high-temperature processes, in order to provide a trench capacitor.

Abstract: A semiconductor component has a cavity formed in a monocrystalline silicon substrate. The wall of the cavity is covered by a cover layer, at least in an upper collar region, and a covering layer is then applied to the surface of the silicon substrate using a selective epitaxial growth method. The cavity is thereby covered in the process. The method is physically simple and can be carried out cost-effectively. In particular, the described method can be used in order to cover a trench prior to high-temperature processes during the production of a DRAM memory, and to open the trench once again after the high-temperature processes, in order to provide a trench capacitor.