Patents by Inventor Kesao Noguchi

Kesao Noguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070007845
    Abstract: This invention provides a built-up commutator which can effectively contribute to light weight and small size thereof due to decreasing the number of constitutional components and enhancing an assembling accuracy, and provides a micro-motor employing the built-up commutator. According to FIG. 1, a built-up commutator includes at least a supporting pedestal 13 and a plurality of commutator pieces each of which is disposed respectively, the supporting pedestal fixed in flange-shape to a rotating shaft, each of the commutator pieces including a foot piece formed as to abut on the supporting pedestal side and a uprising piece bent from the foot piece side and formed as to abut the rotating shaft side, each of the commutator pieces is positioned and fixed to the shaft 12 side and the pedestal 13 side with air gaps intervening between the commutator pieces and an insulating layer intervening on contact surfaces with the shaft 12 and with the pedestal 13.
    Type: Application
    Filed: July 6, 2006
    Publication date: January 11, 2007
    Inventors: Yoshimi Suzuki, Kesao Noguchi
  • Patent number: 6545735
    Abstract: In a reflective liquid crystal display, source/drain electrodes are formed on an insulation substrate and separated from each other. A pixel electrode is provided which has an end portion unitary formed with the source electrode and the pixel electrode extending over the insulation substrate. A semiconductor layer extends over the insulation substrate in contact directly with a gap between the source/drain electrodes and also extends on at least respective parts of the source/drain electrodes for connecting the source/drain electrodes. A gate insulation film extends over entire parts of the semiconductor layer. A gate electrode extends on at least a part of the gate insulation film so that the gate electrode is positioned to cover the semiconductor layer and to be separated by the gate insulation film from the semiconductor layer for shielding the semiconductor layer from incident light.
    Type: Grant
    Filed: July 21, 2000
    Date of Patent: April 8, 2003
    Assignee: NEC Corporation
    Inventors: Shin Koide, Takuya Katou, Shuuki Yamamori, Kesao Noguchi
  • Patent number: 6461901
    Abstract: A thin-film transistor is provided, which has a simple configuration and improved off-characteristic, operational reliability, and fabrication yield. This transistor includes a substrate and a layered structure formed on the substrate. The layered structure includes a semiconductor film, a gate insulating film located on a first side of the semiconductor film to be overlapped with the semiconductor film, a gate electrode located on the gate insulating film on the first side of the semiconductor film to be selectively overlapped with the semiconductor film, a source electrode located on a second side of the semiconductor film to be electrically connected to the semiconductor film, and a drain electrode located on the second side of the semiconductor film to be electrically connected to the semiconductor film and to be apart from the source electrode. The semiconductor film has a back channel section between opposite ends of the source and drain regions.
    Type: Grant
    Filed: September 8, 1999
    Date of Patent: October 8, 2002
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 6285041
    Abstract: A thin-film transistor is provided, which has a simple configuration and improved off-characteristic, operational reliability, and fabrication yield. This transistor includes a substrate and a layered structure formed on the substrate. The layered structure includes a semiconductor film, a gate insulating film located on a first side of the semiconductor film to be overlapped with the semiconductor film, a gate electrode located on the gate insulating film on the first side of the semiconductor film to be selectively overlapped with the semiconductor film, a source electrode located on a second side of the semiconductor film to be electrically connected to the semiconductor film, and a drain electrode located on the second side of the semiconductor film to be electrically connected to the semiconductor film and to be apart from the source electrode. The semiconductor film has a back channel section between opposite ends of the source and drain regions.
    Type: Grant
    Filed: August 29, 1997
    Date of Patent: September 4, 2001
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 6154264
    Abstract: In a reflective liquid crystal display, source/drain electrodes are formed on an insulation substrate and separated from each other. A pixel electrode is provided which has an end portion unitary formed with the source electrode and the pixel electrode extending over the insulation substrate. A semiconductor layer extends over the insulation substrate in contact directly with a gap between the source/drain electrodes and also extends on at least respective parts of the source/drain electrodes for connecting the source/drain electrodes. A gate insulation film extends over entire parts of the semiconductor layer. A gate electrode extends on at least a part of the gate insulation film so that the gate electrode is positioned to cover the semiconductor layer and to be separated by the gate insulation film from the semiconductor layer for shielding the semiconductor layer from incident light.
    Type: Grant
    Filed: July 22, 1997
    Date of Patent: November 28, 2000
    Assignee: NEC Corporation
    Inventors: Shin Koide, Takuya Katou, Shuuki Yamamori, Kesao Noguchi
  • Patent number: 5361150
    Abstract: An active matrix type liquid display device with a display pattern unit formed on a glass substrate comprises an opaque thin film portion with an identification mark formed on a blank portion of and not in the display and terminal thereof. The opaque thin film portion with an identification mark is not coated with another opaque thin film thereon and is coated with a transparent film thereon so that the identification mark can be visually observed from the surface of the device.
    Type: Grant
    Filed: July 14, 1993
    Date of Patent: November 1, 1994
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 5289016
    Abstract: The thin-film transistor for liquid crystal display according to the present invention has an inverted-staggered structure in which source and drain electrodes are formed above a gate electrode on a glass substrate, and comprises a nondoped amorphous silicon film as a channel region just above the gate electrode, and a borosilicate glass film formed on the amorphous silicon film. Preferably, the transistor further includes a silicon nitride film formed over the borosilicate glass film.
    Type: Grant
    Filed: April 24, 1991
    Date of Patent: February 22, 1994
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 5220443
    Abstract: A matrix wiring substrate comprises a plurality of first level wirings provided on an insulating substrate, a plurality of second level wirings provided on the insulating substrate to intersect the first level wirings, and an insulating layer provided between the first and second level wirings so as to electrically separate the first and second level wirings from each other. A common electrode is connected in common to the first and second level wirings for prevention of an electrostatic destruction of the insulating layer. A non-linear resistance element is connected between each of the first and second level wirings and the common electrode. The non-linear resistance element has a resistance non-linearly decreasing with increase of a voltage applied across the non-linear resistance element.
    Type: Grant
    Filed: April 29, 1991
    Date of Patent: June 15, 1993
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 5040875
    Abstract: An active matrix liquid crystal display includes a number of scan lines, a number of signal lines intersecting the scan lines to cooperate with the scan lines so as to form a matrix. A number of driving thin film transistors are arranged in the form of a matrix and positioned one for each of intersecting points between the scan lines and the signal lines. Each of the driving thin film transistors is connected to one scan line and one signal line. A number of liquid crystal display elements are connected one to each of the driving thin film transistors so that the liquid crystal display elements are selectively driven by the associated thin film transistors. Each of the liquid crystal display elements has a display electrode, a counter electrode opposing the display electrode and a liquid crystal between the display electrode and the counter electrode.
    Type: Grant
    Filed: July 22, 1988
    Date of Patent: August 20, 1991
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 4995703
    Abstract: An improved active matrix type liquid crystal display panel is provided, the liquid crystal display panel being characterized in that the one picture element, formed on an active matrix substrate, is divided into a plurality of subelements and is connected to at least two scanning or signal lines through respective switching elements disposed on each display electrode or that each pair of the neighboring picture elements belonging to different rows or columns of the matrix is staggered with respect to each other and as a result the density of picture defects can significantly be reduced and the formation of echelon images can effectively be eliminated even if an oblique or curved line is reproduced.
    Type: Grant
    Filed: September 26, 1985
    Date of Patent: February 26, 1991
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 4969718
    Abstract: A liquid-crystal multi-color display panel structure comprising a transparent substrate, pixel electrodes disposed on the substrate to form a matrix having columns each in a first direction and rows each in a second direction perpendicular to the first direction, the pixel electrodes consisting of those of first, second and third types respectively for displaying in first, second and third preselected colors, the pixel electrodes of each of row being each one and a half pitch distance offset from the pixel electrodes of the adjacent row, signal lines disposed between adjacent two columns of the matrix and extending in the first direction, scanning lines disposed in every other intervals between adjacent two rows of the matrix and extending in the second direction, switching transistors each having a first terminal connected to one of the pixel electrodes, a second terminal connected to one of the signal lines, a third terminal connected to one of the scanning lines to control the conductivity between the firs
    Type: Grant
    Filed: June 27, 1988
    Date of Patent: November 13, 1990
    Assignee: NEC Corporation
    Inventors: Kesao Noguchi, Shouji Ichikawa
  • Patent number: 4965565
    Abstract: An LCD panel includes a plurality of pixel electrodes disposed on an insulating substrate in rows and columns, and a plurality of drain buses and gate buses formed is a space between the pixel electrodes, the drain buses having portions operating as a drain electrode, the gate buses having branches operating as a gate electrode and each of the pixel electrodes having a side portion to form a thin-film transistor with the portion of the drain buses and the branch of the gate buses, the positions of the side portions of the pixel electrodes in the rows being changed in adjacent pixel electrodes and repeated in the rows and the positions of the pixel electrodes in the columns being changed in adjacent pixel electrodes and repeated in the columns.
    Type: Grant
    Filed: May 6, 1988
    Date of Patent: October 23, 1990
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 4821092
    Abstract: A thin film transistor array board includes an insulator substrate, a matrix of gate electrodes formed on the insulator substrate and covered with a gate insulator film, a matrix of semiconductor islands formed on the gate insulator film positioning on the gate electrodes, source wirings connected to the source regions of the semiconductor islands, drain wirings connected in common to the drain regions of the semiconductor islands aligned in the same line in parallel with the columns of the gate electrode matrix, a second insulator film covering the whole surface including the drain wirings, the source wirings, the semiconductor islands and the pixel electrodes, the second insulator film having grooves exposing the drain wirings and auxiliary wirings formed in the grooves in contact with the drain wirings.
    Type: Grant
    Filed: November 30, 1987
    Date of Patent: April 11, 1989
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 4781438
    Abstract: An active-matrix liquid crystal color display panel includes lines of color pixel elements composed of first, second and third types of cell elements, each cell element having two display electrodes each connected to a video signal bus running therebetween through parallely connected two thin film FET's (TFT's) having gates connected to different scanning signal buses, the first, second and third types of cell elements having different one of three primary color filters, and repetition of the color pixel elements in adjacent line being shifted with a half length of the color pixel element to form triangular color pixel arrangement.
    Type: Grant
    Filed: January 28, 1988
    Date of Patent: November 1, 1988
    Assignee: NEC Corporation
    Inventor: Kesao Noguchi
  • Patent number: 4441973
    Abstract: A semiconductor film is prepared by a method wherein a substrate is first disposed as one electrode within a reaction chamber. A supply of semiconductor material is fed into the reaction chamber as the other electrode while introducing a fluoride semiconductor material into said reaction chamber. A high frequency electric field is generated within the reaction chamber to ionize the semiconductor material and decompose the fluoride of the semiconductor material, whereby an amorphous semiconductor film is deposited on the substrate.
    Type: Grant
    Filed: July 29, 1981
    Date of Patent: April 10, 1984
    Assignee: Nippon Electric Co., Ltd.
    Inventor: Kesao Noguchi