Abstract: A silicon sensor device includes: a plurality of metal layers; and a plurality of dielectric layers. Each of the plurality of metal layers is disposed on a respective dielectric layer, and wherein each of the plurality of metal layers is separated from an adjacent metal layer by a respective dielectric layer. The plurality of metal layers include: a first metal layer comprising a plurality of transmitter electrodes and a plurality of receiver electrodes; a second metal layer disposed beneath the first metal layer, wherein the second metal layer comprises a plurality of routing traces for the plurality of transmitter electrodes and a plurality of shielding blocks; and one or more circuit layers disposed beneath the second metal layer. A respective shielding block of the plurality of shielding blocks is configured to shield a respective portion of a respective receiver electrode of the plurality of receiver electrodes.

Abstract: A silicon sensor device includes: a plurality of metal layers; and a plurality of dielectric layers. Each of the plurality of metal layers is disposed on a respective dielectric layer, and wherein each of the plurality of metal layers is separated from an adjacent metal layer by a respective dielectric layer. The plurality of metal layers include: a first metal layer comprising a plurality of transmitter electrodes and a plurality of receiver electrodes; a second metal layer disposed beneath the first metal layer, wherein the second metal layer comprises a plurality of routing traces for the plurality of transmitter electrodes and a plurality of shielding blocks; and one or more circuit layers disposed beneath the second metal layer. A respective shielding block of the plurality of shielding blocks is configured to shield a respective portion of a respective receiver electrode of the plurality of receiver electrodes.