Abstract: An embodiment discloses a vertical cavity surface emitting laser including a substrate, a lower reflective layer disposed on the substrate, a laser cavity including an active layer and disposed on the lower reflective layer, an oxide layer disposed on the laser cavity, an upper reflective layer disposed on the oxide layer, a plurality of first holes formed in the upper reflective layer and the oxide layer, and an upper electrode disposed on inner sides of the plurality of first holes and disposed on the upper reflective layer, wherein the oxide layer includes a plurality of light emitting regions spaced apart from each other, and the plurality of first holes are disposed to surround each of the light emitting regions in a plan view.

Abstract: A memory system may include a cache memory, a nonvolatile memory, a write back wait queue, and a controller. To evict an eviction cache entry including a target transaction ID from the memory cache to the nonvolatile memory, the controller performs write back operations on cache entries respectively corresponding to waiting entries at a head of the write back wait queue until a waiting entry including the target transaction ID arrives at the head of the write back wait queue, and then performs a write back operation on the eviction cache entry.

Abstract: An embodiment discloses a vertical cavity surface emitting laser including a substrate, a lower reflective layer disposed on the substrate, a laser cavity including an active layer and disposed on the lower reflective layer, an oxide layer disposed on the laser cavity, an upper reflective layer disposed on the oxide layer, a plurality of first holes formed in the upper reflective layer and the oxide layer, and an upper electrode disposed on inner sides of the plurality of first holes and disposed on the upper reflective layer, wherein the oxide layer includes a plurality of light emitting regions spaced apart from each other, and the plurality of first holes are disposed to surround each of the light emitting regions in a plan view.

Abstract: A memory system may include a cache memory, a nonvolatile memory, a write back wait queue, and a controller. To evict an eviction cache entry including a target transaction ID from the memory cache to the nonvolatile memory, the controller performs write back operations on cache entries respectively corresponding to waiting entries at a head of the write back wait queue until a waiting entry including the target transaction ID arrives at the head of the write back wait queue, and then performs a write back operation on the eviction cache entry.

Abstract: The present invention relates to a balloon catheter. The invention comprises: a first shaft; an expandable balloon which is attached to the front end of the first shaft; an expandable lumen which is formed inside the first shaft and to which a liquid required for expanding the balloon is provided; a second shaft which extends from the front end of the first shaft to which the balloon is attached and has a wire hole through which a guide wire passes; and a guide wire lumen, which is formed inside the second shaft and through which the guide wire passes. According to the invention, the first and second shafts are coaxially connected and the expandable lumen and the guide wire lumen are respectively formed in each shaft in order to reduce the overall diameter of the shaft, thereby facilitating surgery and improving pushability.

Abstract: A system and method for providing an image capable of realizing conversion of a 3D tissue structure into which an implant is inserted into a 2D image using a contour technique are provided.

Abstract: Disclosed herein are a nitride semiconductor light-emitting device and a method of manufacturing the same, which are capable of reducing the number of masks by introducing a three-mask process so that the processing becomes simpler and the production yield can be improved.

Abstract: The present invention relates to a semiconductor light-emitting device including a separation region for separating a light-emitting surface, so as to exhibit an excellent current dispersion effect and improve brightness characteristics. The semiconductor light-emitting device of the present invention can obtain the effect for improving uniformity of effective current density by including the separation region for separating the light-emitting region, and can expect an improvement in optical efficiency through the excellent current dispersion effect.

Abstract: Disclosed are a light-emitting device having excellent light-emitting efficiency by a current spreading effect and a method for manufacturing the same. The light-emitting device, according to the present invention, comprises: a light-emitting structure which is formed on a substrate, includes a first semiconductor layer, an active layer, and a second semiconductor layer, and in which a plurality of trenches are formed up to the second semiconductor layer and the active layer; a first electrode formed to come in contact with the second semiconductor layer of the light-emitting structure; and a second electrode formed to come in contact with the first semiconductor layer along at least one edge of the substrate.

Abstract: The present invention relates to a wire stent. The present invention provides a wire stent consisting of a plurality of unit wires. The surfaces of the portions of the wire stent in which the plurality of unit wires are interconnected contact each other in the axial direction, thus increasing the strength of the wire stent in the radial direction while maintaining the unique flexibility of the wire stent, thereby minimizing a recoil phenomenon and shortening phenomenon. Further, the wire stent of the present invention is configured such that the width of the strut of the stent increases toward the inner wall of a blood vessel to thus enable endothelial cellularization to be easily performed, and the stent is fixed at the inner wall of the blood vessel in a more firm manner to thus be more effective in treating angiostenosis.

Abstract: The present invention relates to a balloon catheter. The invention comprises: a first shaft; an expandable balloon which is attached to the front end of the first shaft; an expandable lumen which is formed inside the first shaft and to which a liquid required for expanding the balloon is provided; a second shaft which extends from the front end of the first shaft to which the balloon is attached and has a wire hole through which a guide wire passes; and a guide wire lumen, which is formed inside the second shaft and through which the guide wire passes. According to the invention, the first and second shafts are coaxially connected and the expandable lumen and the guide wire lumen are respectively formed in each shaft in order to reduce the overall diameter of the shaft, thereby facilitating surgery and improving pushability.

Abstract: Provided is a light-emitting device including a light-emitting cell formed on one surface of a substrate, wherein the light-emitting cell comprises a plurality of semiconductor layers and emits light of a certain wavelength; and a wavelength conversion layer formed on the other surface of the substrate and to a certain height of the side of the substrate, wherein the wavelength conversion layer converts a wavelength of light emitted from the light-emitting cell.

Abstract: The present invention relates to III-nitride semiconductor light emitting device and a method for fabricating the same. The III-nitride semiconductor light emitting device includes: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer for generating light by recombination of electrons and holes; and a protrusion formed on a surface of the substrate over which the semiconductor layers are to be grown, a section of the protrusion which is in parallel to the growth direction of the semiconductor layers being formed in a triangular shape.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, including: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer generating light by recombination of electrons and holes; a scattering surface provided on the substrate to scatter the light generated in the active layer; and a sub-scattering portion ruggedly formed on the scattering surface.

Abstract: The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

Abstract: The present invention discloses a semiconductor light emitting device including an active layer for generating light by recombination of electron and hole between a first semiconductor layer having first conductivity and a second semiconductor layer having second conductivity different from the first conductivity, the second semiconductor layer being disposed on the active layer. The semiconductor light emitting device comprises first array including a trench having a first inclination angle, and second array including a trench having a second inclination angle different from the first inclination angle.

Abstract: Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.

Abstract: An apparatus for removing foreign matters from construction waste. A feeding section is installed at a lower end of a hopper. A heating and compressing section has an entrance which is coupled to the feeding section and an exit which is defined at a lower end of the heating and compressing section. A shooter opening and closing section is coupled to the exit of the heating and compressing section. The heating and compressing section comprises a hollow casing having a vertical flange on a side thereof, a compression cylinder installed on the casing, a compression plunger fitted into the casing and coupled to a piston rod of the compression cylinder, and a band heater wound on a circumferential outer surface of and adjacent to a lower end of the casing.

Abstract: The present invention relates to a HI-nitride semiconductor light-emitting device having high external quantum efficiency, provides a HI-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is rough-ened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

Abstract: Disclosed is a method of diagnosing inverter trouble capable of improving convenience of use and safety of the user by notifying the user of the error of switching devices used for outputting AC voltage of the inverter and the earth fault of an output of the inverter when applying power to the inverter.