Patents by Inventor Keum Ju LEE
Keum Ju LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220165914Abstract: A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.Type: ApplicationFiled: January 28, 2022Publication date: May 26, 2022Inventors: Keum Ju LEE, Seom Geun LEE, Kyoung Wan KIM, Yong Woo RYU, Mi Na JANG
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Patent number: 11239387Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.Type: GrantFiled: January 11, 2019Date of Patent: February 1, 2022Assignee: Seoul Viosys Co., Ltd.Inventors: Keum Ju Lee, Seom Geun Lee, Kyoung Wan Kim, Yong Woo Ryu, Mi Na Jang
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Patent number: 10937935Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.Type: GrantFiled: June 26, 2019Date of Patent: March 2, 2021Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jin Woong Lee, Kyoung Wan Kim, Keum Ju Lee
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Patent number: 10608141Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.Type: GrantFiled: March 26, 2018Date of Patent: March 31, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
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Patent number: 10559715Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.Type: GrantFiled: January 28, 2019Date of Patent: February 11, 2020Assignee: SEOUL VIOSYS CO., LTD.Inventors: Mae Yi Kim, Jin Woong Lee, Yeo Jin Yoon, Seom Geun Lee, Yong Woo Ryu, Keum Ju Lee
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Publication number: 20200006612Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.Type: ApplicationFiled: June 26, 2019Publication date: January 2, 2020Applicant: SEOUL VIOSYS CO., LTD.Inventors: Jin Woong LEE, Kyoung Wan KIM, Keum Ju LEE
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Patent number: 10411164Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arc sec.Type: GrantFiled: August 23, 2016Date of Patent: September 10, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jin Woong Lee, Chan Seob Shin, Keum Ju Lee, Seom Geun Lee, Myoung Hak Yang, Jacob J. Richardson, Evan C. O'Hara
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Publication number: 20190157506Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.Type: ApplicationFiled: January 28, 2019Publication date: May 23, 2019Inventors: Mae Yi KIM, Jin Woong LEE, Yeo Jin YOON, Seom Geun LEE, Yong Woo RYU, Keum Ju Lee
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Publication number: 20190148588Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.Type: ApplicationFiled: January 11, 2019Publication date: May 16, 2019Inventors: Keum Ju Lee, Seom Geun Lee, Kyoung Wan Kim, Yong Woo Ryu, Mi Na Jang
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Patent number: 10193017Abstract: A light emitting diode includes a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.Type: GrantFiled: February 26, 2018Date of Patent: January 29, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Mae Yi Kim, Jin Woong Lee, Yeo Jin Yoon, Seom Geun Lee, Yong Woo Ryu, Keum Ju Lee
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Patent number: 10181548Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.Type: GrantFiled: April 18, 2017Date of Patent: January 15, 2019Assignee: Seoul Viosys Co., Ltd.Inventors: Keum Ju Lee, Seom Geun Lee, Kyoung Wan Kim, Yong Woo Ryu, Mi Na Jang
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Publication number: 20180323346Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arcsec.Type: ApplicationFiled: August 23, 2016Publication date: November 8, 2018Inventors: Jin Woong Lee, Chan Seob Shin, Keum Ju Lee, Seom Geun Lee, Myoung Hak Yang
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Publication number: 20180219130Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.Type: ApplicationFiled: March 26, 2018Publication date: August 2, 2018Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
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Publication number: 20180212102Abstract: A light emitting element comprises: a substrate including protrusions; and a light emitting structure located on the substrate. The protrusions are disposed in a honeycomb pattern and include a first protrusion and second to seventh protrusions which are adjacent to the first protrusion and spaced equidistant from the first protrusions. The angle between a first vector line extending in a direction from the center of the first protrusion toward the center of the second protrusion and a second vector line extending in a direction from the center of the first protrusion to the center of the fourth projection is 120° , the angle between the second vector line and the third vector line extending in a direction from the center of the first projection to the center of the sixth protrusion is 120.Type: ApplicationFiled: March 23, 2018Publication date: July 26, 2018Inventors: Keum Ju Lee, Seom Geun Lee, Jun Ho Yun, Woo Chul Gwak, Sam Seok Jang
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Publication number: 20180190864Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.Type: ApplicationFiled: February 26, 2018Publication date: July 5, 2018Inventors: Mae Yi Kim, Jin Woong Lee, Yeo Jin Yoon, Seom Geun Lee, Yong Woo Ryu, Keum Ju Lee
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Patent number: 9929314Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.Type: GrantFiled: October 27, 2016Date of Patent: March 27, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
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Patent number: 9905729Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.Type: GrantFiled: November 17, 2016Date of Patent: February 27, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Mae Yi Kim, Jin Woong Lee, Yeo Jin Yoon, Seom Geun Lee, Yong Woo Ryu, Keum Ju Lee
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Publication number: 20170301826Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.Type: ApplicationFiled: April 18, 2017Publication date: October 19, 2017Inventors: Keum Ju LEE, Seom Geun LEE, Kyoung Wan KIM, Yong Woo RYU, Mi Na JANG
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Patent number: 9755106Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.Type: GrantFiled: March 6, 2015Date of Patent: September 5, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Jeong Hee Yang, Kyoung Wan Kim, Yeo Jin Yoon, Jae Moo Kim, Keum Ju Lee
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Publication number: 20170069789Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.Type: ApplicationFiled: November 17, 2016Publication date: March 9, 2017Inventors: Mae Yi Kim, Jin Woong Lee, Yeo Jin Yoon, Seom Geun Lee, Yong Woo Ryu, Keum Ju Lee