Abstract: A method for patterning an amorphous alloy is provided. The method includes forming a pattern for defining an amorphous alloy deposition region on a parent material, forming an amorphous alloy deposition layer on the parent material with the pattern formed thereon, and etching a region except for the amorphous alloy deposition region. A dome switch is provided. The dome switch includes a metal layer shaped like a dome, a central portion of which protrudes, and, in response to external force being received through the protruding central portion, the central portion contacting and electrically connected to a circuit board, and an amorphous alloy layer disposed on the metal layer. Accordingly, an amorphous alloy structure with enhanced durability and reliability is easily manufactured.

Abstract: An electromagnetic wave shielding thin film for shielding from electromagnetic waves generated in an electronic part is provided. The electromagnetic wave shielding thin film includes metal plate which has elastic limit of 1% or more, strength of 1000 MPa or more, and a volume fraction of an amorphous phase of 50% or more.

Abstract: An amorphous and nano nitride composite thin film, a method for forming the same, and an electronic device having the same are provided. The amorphous and nano nitride composite thin film has a composite structure in which a nitride phase that includes Zr and Al as nitride constituent elements and at least one metal phase are mixed, wherein the metal phase includes at least one element selected from the group including Cu and Ni, the nitride phase includes a ZrN crystalline phase in which a size of a grain is in the range of 10 nm to 500 nm, and a volume fraction of the ZrN crystalline phase is 10% or more.

Abstract: A transparent electrode using an amorphous alloy is provided. The transparent electrode includes a flexible substrate and an amorphous alloy layer configured to have conductivity and to be formed on the flexible substrate so as to have a plurality of voids.

Abstract: According to example embodiments, a metallic glass includes aluminum (Al), a first element group, and a second element group. The first element group includes at least one of a transition metal and a rare earth element. The second element group includes at least one of an alkaline metal, an alkaline-earth metal, a semi-metal, and a non-metal. The second element group and aluminum have an electronegativity difference of greater than or equal to about 0.25. The second element group is included less than or equal to about 3 at % of the metallic glass, based on the total amount of the aluminum (Al), the first element group, and the second element group. A conductive paste and/or an electrode of an electronic device may be formed using the metallic glass.

Abstract: A transparent conductor includes a metallic glass, and a method of manufacturing a transparent conductor includes: preparing a metallic glass or a mixture comprising the metallic glass; and firing the metallic glass or the mixture comprising the metallic glass at a predetermined temperature higher than a glass transition temperature of the metallic glass.

Abstract: A transparent electrode using an amorphous alloy is provided. The transparent electrode includes a flexible substrate and an amorphous alloy layer configured to have conductivity and to be formed on the flexible substrate so as to have a plurality of voids.

Abstract: An electromagnetic wave shielding thin film for shielding from electromagnetic waves generated in an electronic part is provided. The electromagnetic wave shielding thin film includes metal plate which has elastic limit of 1% or more, strength of 1000 MPa or more, and a volume fraction of an amorphous phase of 50% or more.

Abstract: A method for patterning an amorphous alloy is provided. The method includes forming a pattern for defining an amorphous alloy deposition region on a parent material, forming an amorphous alloy deposition layer on the parent material with the pattern formed thereon, and etching a region except for the amorphous alloy deposition region. A dome switch is provided. The dome switch includes a metal layer shaped like a dome, a central portion of which protrudes, and, in response to external force being received through the protruding central portion, the central portion contacting and electrically connected to a circuit board, and an amorphous alloy layer disposed on the metal layer. Accordingly, an amorphous alloy structure with enhanced durability and reliability is easily manufactured.

Abstract: An amorphous and nano nitride composite thin film, a method for forming the same, and an electronic device having the same are provided. The amorphous and nano nitride composite thin film has a composite structure in which a nitride phase that includes Zr and Al as nitride constituent elements and at least one metal phase are mixed, wherein the metal phase includes at least one element selected from the group including Cu and Ni, the nitride phase includes a ZrN crystalline phase in which a size of a grain is in the range of 10 nm to 500 nm, and a volume fraction of the ZrN crystalline phase is 10% or more.

Abstract: A transparent conductor includes a metallic glass, and a method of manufacturing a transparent conductor includes: preparing a metallic glass or a mixture comprising the metallic glass; and firing the metallic glass or the mixture comprising the metallic glass at a predetermined temperature higher than a glass transition temperature of the metallic glass.

Abstract: According to example embodiments, a metallic glass includes aluminum (Al), a first element group, and a second element group. The first element group includes at least one of a transition metal and a rare earth element. The second element group includes at least one of an alkaline metal, an alkaline-earth metal, a semi-metal, and a non-metal. The second element group and aluminum have an electronegativity difference of greater than or equal to about 0.25. The second element group is included less than or equal to about 3 at % of the metallic glass, based on the total amount of the aluminum (Al), the first element group, and the second element group. A conductive paste and/or an electrode of an electronic device may be formed using the metallic glass.

Abstract: According to example embodiments, a conductive powder includes a metallic glass and a coating on the surface of the metallic glass. The coating includes a metal. An article may include a sintered product of the conductive powder. A conductive paste may include the conductive powder. An electronic device may include a sintered product of the conductive paste.