Abstract: The present disclosure provides autotaxin (ATX) inhibitor compounds and compositions including said compounds. The present disclosure also provides methods of using said compounds and compositions for inhibiting ATX. Also provided are methods of preparing said compounds and compositions, and synthetic precursors of said compounds.

Abstract: A method for manufacturing a semiconductor device includes forming a sacrificial layer for forming a lower electrode as an amorphous carbon layer in order to prevent collapsing of a cylindrical lower electrode. When an alignment process is not normally performed to arrange photoresist mask pattern for storage electrode and lower electrode contact plug due to optical absorbance of the amorphous carbon layer, a polysilicon layer is further formed over a SiON film used as a hard mask of the amorphous carbon layer, thereby reducing risk of misalignment and performing a stable process for forming a capacitor to increase yield of semiconductor devices.

Abstract: Disclosed is a method for manufacturing a semiconductor device using an immersion lithography process comprising rapidly accelerating the rotation of a wafer after exposing and before developing steps to remove an immersion lithography solution, thereby effectively reducing water mark defects.

Abstract: A method for aligning wafer is provided, the method including loading and aligning a first wafer in an exposure apparatus, selecting a non-defective wafer alignment mark among a plurality of wafer alignment marks of the first wafer and storing the non-defective wafer alignment marks as a gray level reference image in a job file, loading a second wafer and storing a plurality of wafer alignment marks of the second wafer as gray level wafer alignment mark images, respectively comparing each of the plurality of wafer alignment mark images of the second wafer with the reference image of the first wafer pixel by pixel to obtain matching value for each of the plurality of the wafer alignment mark images, comparing each of the plurality of the matching values with a minimum value set in the exposure apparatus, replacing the wafer alignment mark image having the matching value smaller than the minimum value with the reference image, and obtaining an alignment information for an underlying layer using a wafer alignmen

Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.