Abstract: A CMOS image sensor and a fabrication method thereof is provided.

Abstract: A CMOS image sensor is provided. The CMOS image sensor includes: a semiconductor substrate having a photodiode region and a floating diffusion region defined thereon; a gate electrode formed inside the photodiode region of the semiconductor substrate; a low concentration impurity region formed on the photodiode region at one side of the gate electrode; and a high concentration impurity region formed at the other side of the gate electrode, including on the floating diffusion region.

Abstract: A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes a semiconductor substrate having a photodiode region and a transistor region defined therein, first and second gate electrodes formed on the photodiode region of the semiconductor substrate with a gate insulating layer interposed therebetween, the first and second electrodes connected in a “?” shape spaced a predetermined interval from each other, a first conductivity type diffusion region formed in the photodiode region including between the first and second gate electrodes, spacer insulating layers formed on sidewalls of the first and second gate electrodes, and a floating diffusion region formed in the transistor region.

Abstract: A CMOS image sensor and method for fabricating same are provided. The CMOS image sensor can include a gate electrode formed on an active area of a first conductive type semiconductor substrate, on which a photodiode area and a transistor area are defined; a low-density second conductive type diffusion region formed on the photodiode area at a first side of the gate electrode; a high-density second conductive the diffusion region formed on the transistor area at a second side of the gate electrode; an insulating layer formed on the semiconductor substrate at both sides of the gate electrode with a thickness less than a thickness of the gate electrode, but greater than a thickness of a gate insulating layer; and insulating layer sidewalls formed on the insulating layer at both sides of the gate electrode.

Abstract: Provided are a CMOS image sensor and a manufacturing method thereof. The CMOS image sensor includes a gate insulating layer and a gate electrode, a low-density diffusion region of a second conductive type, a high-density diffusion region of the second conductive type, and a high-density diffusion region of a first conductive type. The gate insulating layer and a gate electrode are sequentially formed on an active region of a substrate of the first conductive type having a photodiode region and a transistor region. The low-density diffusion region of the second conductive type is formed on the photodiode region. The high-density diffusion region of the second conductive type is formed on the transistor region. The high-density diffusion region of the first conductive type is formed on the transistor region to nestle the high-density diffusion region of the second conductive type.

Abstract: Provided is a CMOS image sensor and a manufacturing method thereof. The CMOS image sensor includes a gate electrode, a photodiode, a transistor region, and a light blocking material. The gate electrode is formed on a semiconductor substrate with an intervening gate insulating layer. The photodiode region is formed on one side of the gate electrode. The transistor region is formed on another side of the gate electrode. The light blocking material is formed on the transistor region to block light from reaching the transistor region.

Abstract: A method of fabricating a semiconductor device includes steps of forming at least one shallow-trench isolation region in a semiconductor substrate; forming a photoresist pattern for blocking a photodiode region; sequentially implanting dopant ions and boron ions into the at least one shallow-trench isolation region; and activating the implanted ions. Since germanium ions are implanted before implanting P-type ions in a channel-stop ion implantation process, the lattice structure of the surface of a shallow-trench isolation region is maintained, to thereby allow a deeper penetration of the implanted P-type ions (boron ions), and to prevent the P-type ions from being outwardly diffused according to an increased lattice scattering phenomenon generated upon a thermal process.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which light that transmits through a microlens is prevented from being beyond a photodiode region to minimize loss of incident light and to improve low illumination characteristics of the CMOS image sensor. The CMOS image sensor includes a semiconductor substrate including a transistor region and a photodiode region, a gate electrode formed on the semiconductor substrate corresponding to the transistor region, an interlayer dielectric layer formed on an entire surface of the semiconductor substrate including the gate electrode, a microlens formed over the interlayer dielectric layer to condense light, and a metal barrier formed in the interlayer dielectric layer to surround a portion of the interlayer dielectric layer corresponding to the photodiode region and to reflect light in the photodiode region that transmits through the microlens but goes beyond the photodiode region.

Abstract: A CMOS image sensor and a method for fabricating the same forms a trench-shaped transfer gate that serves to better transfer electrons generated by light incident on photodiodes, thus obtaining improved transfer characteristics. The CMOS image sensor includes a semiconductor substrate having at least one active region defined by a shallow trench isolation region; a light-receiving region formed in a surface of the semiconductor substrate; and a transfer gate buried in the semiconductor substrate between the light-receiving region and the at least one active region, wherein the transfer gate has a trench shape of a predetermined depth.

Abstract: A CMOS image sensor and a method for fabricating the same in which characteristics of the image sensor are not affected even if a profile of microlenses is varied, so as to obtain a more reliable device. The CMOS image sensor of the present invention includes color filter layers formed over a semiconductor substrate, a planarization layer formed on the color filter layers, and microlenses formed of the same material as that of the planarization layer on the planarization layer, the microlenses positioned to correspond to the color filter layers respectively.

Abstract: A CMOS image sensor and method for fabricating the same is disclosed that reconditions, repairs and/or protects a surface of a photodiode area and improves characteristics of the image sensor. The method includes forming a photodiode area and a plurality of transistors, implanting a predetermined ion into a surface of the photodiode area, and forming a surface oxide film on the surface of the photodiode area by oxidation. Therefore, it is possible to recover or repair the photodiode surface damaged during various fabrication processes, reduce or minimize surface leakage of the photodiode during subsequent processes, and improve image sensor characteristics by increasing incident light on the photodiode.

Abstract: Image sensor and method for fabricating the same are disclosed, wherein, instead of a traditional microlens array over a color filter array, a microlens pattern is arranged under the color filter array, which can permit shortening a total travel distance of a converged light to the photodiode, improve intensity and focus of the light finally reaching the photodiode array, and improve a low luminance performance of the image sensor. The minimized travel distance of the converged light, which optimizes intensity and focus of the light reaching the photodiode array, permits significantly improving an image quality reproduced by the image sensor.

Abstract: A method for manufacturing a CMOS image sensor includes depositing a gate oxide film and polysilicon on a substrate, forming a gate electrode by patterning and etching the gate oxide layer and the polysilicon, wherein the polysilicon of the gate electrode extends to an active region of the substrate, forming spacers on the sidewalls of the gate electrode, forming a mask pattern having an opening over the active region, removing the spacers and the gate oxide layer thereunder in the active region, removing the mask pattern, depositing a protective layer on a pixel region of the substrate, and conducting a salicide formation process on the resulting structure.