Abstract: A first oscillator counter value is received at a first time, and a second oscillator counter value is received at a second time. The first time precedes the second time. The first oscillator count value is compared to the second oscillator count value. responsive to determining that the first oscillator count value and the oscillator second count value do not match, a propagation delay for performing write operations on a memory device is adjusted.

Abstract: This document describes apparatuses and techniques for implementing data masking with pulse amplitude modulation (PAM) encoded signals of a memory circuit. In various aspects, a data mask function of a memory controller may use an unassigned or prohibited PAM signaling state for a set of data lines to indicate data masking to a memory device for a group of data bits. For example, the data mask function may alter a PAM symbol or signal level for at least one data line from a low-voltage state (L) or mid-voltage state (M) state to a high-voltage state (H), resulting in a PAM signaling state for the set of data lines that corresponds data mask indication for the group of data bits. By so doing, the data mask function may indicate data masking for the group of bits without a dedicated data mask signal line, which may enable improved per-line memory bandwidth.

Abstract: This document describes apparatuses and techniques for multi-rail power transition. In various aspects, a power rail controller transitions a memory circuit (e.g., of a memory die) from a first power rail to a second power rail. The power rail controller then changes a voltage of the first power rail from a first voltage to a second voltage. The power rail controller may also adjust termination impedance or a clock frequency of the memory circuit before transitioning the memory circuit to the second power rail. The power rail controller then transitions the memory circuit from the second power rail to the first power rail to enable operation of the memory circuit at the second voltage. By so doing, the power rail controller may improve the reliability of memory operations when transitioning operation of the memory circuit from the first voltage to the second voltage.

Abstract: Methods, systems, and devices for managing address access information are described. A device may receive a command for an address of a memory array. Based on or in response to the command, the device may read a first set of tag bits from the memory array. The first set of tag bits may indicate access information for a set of addresses that includes the address. The device may determine a second set of tag bits based on the command and the address. The second set of tag bits may indicate updated access information for the address. The device may generate a codeword based on the first set of tag bits and the second set of tag bits and may store the codeword in the memory array.

Abstract: Proposed is a combined structure, and the combined structure includes a coupling target object having a coupling space that comprises a first space and a second space communicating with each other, a damper structure accommodated in the first space and including a flexible portion having a hollow therein and a hard portion coupled to the flexible portion and having one surface exposed to an outside, and a coupling unit accommodated in the second space, a portion of which is in contact with one surface of the hard portion. The hollow is closed from the outside in the damper structure. In response to rotation of the coupling unit in the second space, another portion different from the portion of the coupling unit comes into contact with the hard portion.

Abstract: Described apparatuses and methods provide configurable error correction code (ECC) circuitry and schemes that can utilize a shared ECC engine between multiple memory banks of a memory, including a low-power double data rate (LPDDR) memory. A memory device may include one or more dies with multiple memory banks. The configurable ECC circuitry can use an ECC engine that services a memory bank by producing ECC values based on data stored in the memory bank when data-masking functionality is enabled. When data-masking functionality is disabled, the configurable ECC circuitry can use the shared ECC engine that services at least two memory banks by producing ECC values with a larger quantity of bits based on respective data stored in the at least two memory banks. By using the shared ECC engine responsive to the data-masking functionality being disabled, the ECC functionality can provide higher data reliability with lower die area utilization.

Abstract: This document describes apparatuses and techniques for implementing data masking with pulse amplitude modulation (PAM) encoded signals of a memory circuit. In various aspects, a data mask function of a memory controller may use an unassigned or prohibited PAM signaling state for a set of data lines to indicate data masking to a memory device for a group of data bits. For example, the data mask function may alter a PAM symbol or signal level for at least one data line from a low-voltage state (L) or mid-voltage state (M) state to a high-voltage state (H), resulting in a PAM signaling state for the set of data lines that corresponds data mask indication for the group of data bits. By so doing, the data mask function may indicate data masking for the group of bits without a dedicated data mask signal line, which may enable improved per-line memory bandwidth.

Abstract: Methods, systems, and devices for managing address access information are described. A device may receive a command for an address of a memory array. Based on or in response to the command, the device may read a first set of tag bits from the memory array. The first set of tag bits may indicate access information for a set of addresses that includes the address. The device may determine a second set of tag bits based on the command and the address. The second set of tag bits may indicate updated access information for the address. The device may generate a codeword based on the first set of tag bits and the second set of tag bits and may store the codeword in the memory array.

Abstract: Apparatuses and techniques for implementing a data-transfer test mode are described. The data-transfer test mode refers to a mode in which the transfer of data from an interface die to a linked die can be tested prior to connecting the interface die to the linked die. In particular, the data-transfer test mode enables the interface die to perform aspects of a write operation and output a portion of write data that is intended for the linked die. With the data-transfer test mode, testing (or debugging) of the interface die can be performed during an earlier stage in the manufacturing process before integrating the interface die into an interconnected die architecture. For example, this type of testing can be performed at a wafer level or at a single-die-package (SDP) level. In general, the data-transfer test mode can be executed independent of whether the interface die is connected to the linked die.

Abstract: A training operation may be performed by a memory controller to provide a system clock signal and a data clock signal having a desired temporal (e.g., phase) relationship to one another. The system clock and data clock signals may be provided to a memory. In some examples, the memory controller may provide a command to the memory to put the memory in a training mode. Once in the training mode, the memory controller may provide a write command and toggle the data clock signal a number of times. If the memory provides one output, the memory controller may adjust the relationship between the data clock and system clock signals. If the memory provides another output, the memory controller may maintain the relationship between the data clock and system clock signals and exit the training mode.

Abstract: Apparatuses and techniques for operating devices with multiple differential write clock signals having different phases are described. For example, a memory controller (e.g., of a host device) can provide two differential write clock signals to a memory device over an interconnect. The two differential write clock signals may have a phase offset of approximately ninety degrees. Instead of generating its own phase-delayed write clock signals using a component (e.g., a clock divider circuit) that can enter the metastable state, the memory device can use the multiple differential write clocks signals provided by the memory controller to process memory requests.

Abstract: A clock generator circuit may generate internal data clock signals, such as quadrature phase clock signals, based at least in part, on one clock signal responsive, at least in part, to another clock signal. In some examples, the internal data clock signals may be generated from a system clock signal responsive to a data clock signal. In some examples, the internal data clock signal may be generated by sampling the system clock signal. In some examples, the sampling may be performed responsive to the data clock signal. In some examples, a latch may latch a state of the system clock signal responsive to the data clock signal. The latch may output the internal data clock signal.

Abstract: A first oscillator counter value is received at a first time, and a second oscillator counter value is received at a second time. The first time precedes the second time. The first oscillator count value is compared to the second oscillator count value. responsive to determining that the first oscillator count value and the oscillator second count value do not match, a propagation delay for performing write operations on a memory device is adjusted.

Abstract: This document describes apparatuses and techniques for termination for single-ended (SE) mode operation of a memory device. In various aspects, a termination circuit can terminate an unused signal line of a differential pair to a ground or power rail using a switch element when operating in the SE mode. The termination circuit may also disconnect the unused signal line from a first input of a differential amplifier and connect a reference voltage to the first input of the differential amplifier. Based on the reference voltage, the differential amplifier amplifies an SE signal received using another signal line of the differential pair at a second input of the differential amplifier to provide a clock signal for memory operations. Thus, the termination circuit may reduce an amount by which noise associated with the unused signal line affects the differential amplifier when the memory device operates in SE mode.

Abstract: Apparatuses and techniques for operating devices with multiple differential write clock signals having different phases are described. For example, a memory controller (e.g., of a host device) can provide two differential write clock signals to a memory device over an interconnect. The two differential write clock signals may have a phase offset of approximately ninety degrees. Instead of generating its own phase-delayed write clock signals using a component (e.g., a clock divider circuit) that can enter the metastable state, the memory device can use the multiple differential write clocks signals provided by the memory controller to process memory requests.

Abstract: In some examples, memory die may include a selection pad, which may be coupled to a power potential. The selection pad may provide a signal to a selection control circuit, which may control a selection circuit to couple a power pad to one of multiple power rails. In some examples, a power management integrated circuit may include a selection circuit to provide one power potential to a package including a memory die when a selection signal has a logic level and another power potential when the selection signal has another logic level.

Abstract: This document describes apparatuses and techniques for implementing data masking with pulse amplitude modulation (PAM) encoded signals of a memory circuit. In various aspects, a data mask function of a memory controller may use an unassigned or prohibited PAM signaling state for a set of data lines to indicate data masking to a memory device for a group of data bits. For example, the data mask function may alter a PAM symbol or signal level for at least one data line from a low-voltage state (L) or mid-voltage state (M) state to a high-voltage state (H), resulting in a PAM signaling state for the set of data lines that corresponds data mask indication for the group of data bits. By so doing, the data mask function may indicate data masking for the group of bits without a dedicated data mask signal line, which may enable improved per-line memory bandwidth.

Abstract: This document describes apparatuses and techniques for write timing compensation. In various aspects, a write timing compensator of a memory controller can apply a delay to data signals transmitted to a memory circuit based on various operating parameters, which may include voltage or latency information. In some cases, the memory controller or memory circuit powers components of write timing compensation circuitry using a dynamic power rail that scales with an operating voltage of the memory circuit. By so doing, the write timing compensator or compensation circuits may improve signal integrity of data signals communicated between the memory controller and the memory circuit at different frequencies and voltages.

Abstract: This document describes apparatuses and techniques for multi-rail power transition. In various aspects, a power rail controller transitions a memory circuit (e.g., of a memory die) from a first power rail to a second power rail. The power rail controller then changes a voltage of the first power rail from a first voltage to a second voltage. The power rail controller may also adjust termination impedance or a clock frequency of the memory circuit before transitioning the memory circuit to the second power rail. The power rail controller then transitions the memory circuit from the second power rail to the first power rail to enable operation of the memory circuit at the second voltage. By so doing, the power rail controller may improve the reliability of memory operations when transitioning operation of the memory circuit from the first voltage to the second voltage.

Abstract: Methods, systems, and devices for managing address access information are described. A device may receive a command for an address of a memory array. Based on or in response to the command, the device may read a first set of tag bits from the memory array. The first set of tag bits may indicate access information for a set of addresses that includes the address. The device may determine a second set of tag bits based on the command and the address. The second set of tag bits may indicate updated access information for the address. The device may generate a codeword based on the first set of tag bits and the second set of tag bits and may store the codeword in the memory array.