Patents by Inventor Keun-Ting Shiu

Keun-Ting Shiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICATION
    Publication number: 20170025504
    Abstract: A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V material, the In containing III-V material being indium-gallium-arsenic (InGaAs) or indium-aluminum-arsenic (InAlAs) and comprising In in an increasing atomic gradient up to 35 atomic % (at. %) based on total atomic weight of InGa or InAl; and forming a layer of InGaAs on the graded layer, the layer of InGaAs comprising about 25 to about 100 at. % In based on total atomic weight of InGa.
    Type: Application
    Filed: October 7, 2016
    Publication date: January 26, 2017
    Inventors: Cheng-Wei Cheng, Devendra K. Sadana, Keun-Ting Shiu, Yanning Sun
  • Preparation of low defect density of III-V on Si for device fabrication
    Patent number: 9508550
    Abstract: A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V material, the In containing III-V material being indium-gallium-arsenic (InGaAs) or indium-aluminum-arsenic (InAlAs) and comprising In in an increasing atomic gradient up to 35 atomic % (at. %) based on total atomic weight of InGa or InAl; and forming a layer of InGaAs on the graded layer, the layer of InGaAs comprising about 25 to about 100 at. % In based on total atomic weight of InGa.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: November 29, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Cheng-Wei Cheng, Devendra K. Sadana, Keun-Ting Shiu, Yanning Sun
  • PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICATION
    Publication number: 20160322223
    Abstract: A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V material, the In containing III-V material being indium-gallium-arsenic (InGaAs) or indium-aluminum-arsenic (InAlAs) and comprising In in an increasing atomic gradient up to 35 atomic % (at. %) based on total atomic weight of InGa or InAl; and forming a layer of InGaAs on the graded layer, the layer of InGaAs comprising about 25 to about 100 at. % In based on total atomic weight of InGa.
    Type: Application
    Filed: June 19, 2015
    Publication date: November 3, 2016
    Inventors: Cheng-Wei Cheng, Devendra K. Sadana, Keun-Ting Shiu, Yanning Sun
  • PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICATION
    Publication number: 20160322222
    Abstract: A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V material, the In containing III-V material being indium-gallium-arsenic (InGaAs) or indium-aluminum-arsenic (InAlAs) and comprising In in an increasing atomic gradient up to 35 atomic % (at. %) based on total atomic weight of InGa or InAl; and forming a layer of InGaAs on the graded layer, the layer of InGaAs comprising about 25 to about 100 at. % In based on total atomic weight of InGa.
    Type: Application
    Filed: April 28, 2015
    Publication date: November 3, 2016
    Inventors: Cheng-Wei Cheng, Devendra K. Sadana, Keun-Ting Shiu, Yanning Sun