Abstract: A display device includes a substrate having a light emitting area and a non-light emitting area; a first anode electrode on the light emitting area of the substrate; a pixel defining layer on the non-light emitting area of the substrate and defining a first opening; an organic separator layer on the pixel defining layer and defining a second opening; a first light emitting layer on the first anode electrode; a common electron layer on the first light emitting layer and the organic separator layer; and a common electrode on the common electron layer, wherein the organic separator layer does not overlap the light emitting area, and overlaps the non-light emitting area to be in contact with the pixel defining layer, the first light emitting layer, and the common electron layer.

Abstract: A display device includes a light-emitting element disposed on a substrate, a first transistor configured to control a driving current flowing in the light-emitting element, a second transistor configured to apply a data voltage to a source electrode of the first transistor, a third-first transistor connected to a gate electrode of the first transistor, and a third-second transistor connected between a source electrode of the third-first transistor and a drain electrode of the first transistor. One side of a semiconductor region of the third-second transistor adjacent to a source electrode of the third-second transistor has a first width, and another side of the semiconductor region of the third-second transistor adjacent to a drain electrode of the third-second transistor has a second width smaller than the first width.

Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

Abstract: A method for processing an abusing message in an anonymous chatroom includes providing a rule set of a latest version to an administrator terminal of the anonymous chatroom when the administrator terminal logs in to an account through a message application or enters the anonymous chatroom, receiving a new message in the anonymous chatroom, providing the new message to the administrator terminal, receiving a request for hiding the new message from the administrator terminal when the new message is determined to be an abusing message based on at least one of a spam keyword and the rule set stored in the administrator terminal, and transmitting a command to hide the new message to a user terminal that joins the anonymous chatroom according to the request for hiding the new message.

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

Abstract: The present invention provides an alginic acid-based injectable hydrogel system for labeling an accurate position of a disease lesion and effectively delivering a drug to a target region. The formulation of the present invention can make it easy to locally inject a contrast agent and a drug into a target region while controlling the release rate of the contrast agent or the drug, with the formation of the hydrogel in the injected region. Through the advantages, the labeled position can be accurately determined from images, thereby enhancing the precision of surgical operation, with a minimal incision formed therefor. In addition, when used, the alginic acid-based injectable hydrogel system allows the effective local delivery of a drug to a target region while increasing the long-acting effect of the drug.

Abstract: Disclosed is an interface circuit and a semiconductor device including the same. The interface circuit may include a data pad, a first driving circuit connected between the data pad and a first supply node, and configured to adjust a first resistance value applied between the data pad and the first supply node according to termination modes and selectively drive the data pad with a first supply voltage, and a first tuning circuit connected between the first supply node and a first voltage supply terminal, and configured to tune the first resistance value according to the termination modes.

Abstract: A semiconductor memory device includes a bit line extending in a first direction on a substrate, an active pattern on the bit line, a word line on a first sidewall of the active pattern and extending in a second direction, a back gate electrode on a second sidewall of the active pattern and extending in the second direction, a gate isolation pattern on the first sidewall of the active pattern and including a low-k pattern extending in the second direction, and a data storage pattern connected to the second surface of the active pattern. The word line is between the active pattern and the gate isolation pattern, and a vertical distance between the bit line and the word line is greater than a vertical distance between the bit line and the low-k pattern.

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 ?m to about 2 ?m, and a length of the channel of the third transistor is in a range of about 1 ?m to about 2.5 ?m.

Abstract: A display device includes: a plurality of pixels connected to gate lines and data lines; a gate driver to supply a gate signal to the gate lines; and a data driver to supply a data signal to the data lines. The gate driver includes: a first transistor including a first active layer at a first layer; and a second transistor including a second active layer at a second layer on the first layer.

Abstract: The present disclosure relates to a battery assembly including a case accommodating a plurality of battery cells, a heat dissipation part located between the plurality of battery cells and the accommodating bottom surface, and a pad part located between a plurality of battery groups in which adjacent battery cells among the plurality of battery cells are grouped by a preset number of cells, wherein an absolute value of a difference between a surface hardness of the heat dissipation part and a surface hardness of the pad part is less than or equal to a preset allowable value.

Abstract: The present invention provides method and apparatus for purifying exhaust gas of a vessel and a vessel including the same, in which a risk for a vessel and crew of being exposed to ammonia gas used to collect carbon dioxide included in exhaust gas emitted from a vessel may be minimized and an ammonia solution may be recycled and reused to collect carbon dioxide, in order to satisfy regulations on discharge of exhaust gas by the IMO. Also, the present invention provides an apparatus 1000 for purifying exhaust gas of a vessel and a method of purifying exhaust gas of a vessel using the same, in which carbon dioxide and sulfur dioxide included in exhaust gas emitted from a vessel may be collected by using a reaction solution and may be changed into a substance that does not affect the environment so as to be stored and transported to land.

Abstract: An embodiment of a display device includes a flexible substrate including a polyimide layer and a barrier layer disposed on the polyimide layer. A driving transistor and a second transistor are disposed on the flexible substrate and include a polycrystalline semiconductor layer. A third transistor is disposed on the flexible substrate and includes an oxide semiconductor layer. A light emitting diode is electrically connected to the driving transistor. A bottom shield layer is disposed between the polyimide layer and the polycrystalline semiconductor layer in a cross-sectional view and disposed around a channel of the driving transistor in a plan view.

Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

Abstract: A display device includes a first transistor configured to control a driving current flowing from a first electrode to a second electrode according to a voltage applied to a gate electrode of the first transistor, and a second transistor between the second electrode of the first transistor and the gate electrode of the first transistor, the second transistor including a first sub-transistor and a second sub-transistor. A same scan signal is to be transmitted to a gate electrode of the first sub-transistor and a gate electrode of the second sub-transistor. A gate insulating layer of the first sub-transistor includes a first thickness. A gate insulating layer of the second sub-transistor includes a second thickness smaller than the first thickness.

Abstract: A light emitting display device includes a driving transistor including a first driving gate electrode, a second driving gate electrode, a first electrode, and a second electrode, a second transistor including a gate electrode, a first electrode connected to a data line, and a second electrode connected to the second driving gate electrode, a light emitting diode including an anode directly connected to the second electrode of the driving transistor, a storage capacitor including a first storage electrode connected to the anode of the light emitting diode and a second storage electrode connected to the second driving gate electrode, a driving voltage line directly connected to the first electrode of the driving transistor, and a light emitting control line directly connected to the first driving gate electrode.

Abstract: The disclosure relates to a display device, and more particularly, to a display device capable of reducing a dead space area while improving current driving capability of pull-up and pull-down transistors. According to an embodiment of the disclosure, a substrate having a display area and a non-display area; pixels arranged in the display area of the substrate; and a gate driving circuit disposed in the non-display area of the substrate and connected to a transistor of the pixel. The gate driving circuit includes a pull-up transistor and a pull-down transistor. At least one of the pull-up and pull-down transistors includes a plurality of sub-transistors including a plurality of gate electrodes, and wherein the sub-transistors shares at least one of the gate electrodes.

Abstract: A display device offering a stabilized output of a small gate driving circuit is presented. The display device includes a substrate having a display area and a non-display area; a pixel disposed in the display area of the substrate; and a gate driving circuit disposed in the non-display area of the substrate and connected to a transistor of the pixel, wherein the gate driving circuit comprises: a node control unit; a pull-up transistor connected to a set node of the node control unit through a gate electrode; and a pull-down transistor connected to a reset node of the node control unit through a gate electrode, wherein a width of a first channel region of the pull-up transistor is greater than a width of a second channel region of the pull-down transistor.

Abstract: A display device includes a light emitting element disposed on a substrate, a first transistor which controls a driving current flowing in the light emitting element, a second transistor which supplies a data voltage to a gate electrode of the first transistor, a first-third transistor and a second-third transistor connected in series between the gate and drain electrodes of the first transistor, a first charge injection layer adjacent to a drain electrode of the first-third transistor electrically connected to the gate electrode of the first transistor on a semiconductor region of the first-third transistor, and a second charge injection layer adjacent to a source electrode of the second-third transistor integrally formed with the drain electrode of the first transistor on a semiconductor region of the second-third transistor. A charge injection area of the first charge injection layer is greater than a charge injection area of the second charge injection layer.

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.