Abstract: A light emitting display device includes a driving transistor including a first driving gate electrode, a second driving gate electrode, a first electrode, and a second electrode, a second transistor including a gate electrode, a first electrode connected to a data line, and a second electrode connected to the second driving gate electrode, a light emitting diode including an anode directly connected to the second electrode of the driving transistor, a storage capacitor including a first storage electrode connected to the anode of the light emitting diode and a second storage electrode connected to the second driving gate electrode, a driving voltage line directly connected to the first electrode of the driving transistor, and a light emitting control line directly connected to the first driving gate electrode.

Abstract: A voltage generation circuit includes a voltage generation unit configured to generate a reference voltage using a power supply voltage and output the reference voltage through a voltage output node. The voltage generation circuit also includes a pre-charge unit configured to drive the voltage output node using the power supply voltage in response to a pre-charge control signal. The voltage generation circuit further includes a pre-charge control unit configured to generate at least one sampling voltage using the power supply voltage and generate the pre-charge control signal according to a result obtained by comparing the at least one sampling voltage with the reference voltage.

Abstract: The disclosure relates to a display device, and more particularly, to a display device capable of reducing a dead space area while improving current driving capability of pull-up and pull-down transistors. According to an embodiment of the disclosure, a substrate having a display area and a non-display area; pixels arranged in the display area of the substrate; and a gate driving circuit disposed in the non-display area of the substrate and connected to a transistor of the pixel. The gate driving circuit includes a pull-up transistor and a pull-down transistor. At least one of the pull-up and pull-down transistors includes a plurality of sub-transistors including a plurality of gate electrodes, and wherein the sub-transistors shares at least one of the gate electrodes.

Abstract: A color conversion panel includes a substrate including first and second light emitting regions, banks partitioning the first and second light emitting regions, each bank among the banks including a bank light transmission layer, a metal layer on the bank light transmission layer and a transparent layer on the metal layer, a color conversion layer in the first light emitting region, and a light transmission layer in the second light emitting region. The bank light transmission layer and the light transmission layer are respective portions of a same material layer on the substrate.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: A display device offering a stabilized output of a small gate driving circuit is presented. The display device includes a substrate having a display area and a non-display area; a pixel disposed in the display area of the substrate; and a gate driving circuit disposed in the non-display area of the substrate and connected to a transistor of the pixel, wherein the gate driving circuit comprises: a node control unit; a pull-up transistor connected to a set node of the node control unit through a gate electrode; and a pull-down transistor connected to a reset node of the node control unit through a gate electrode, wherein a width of a first channel region of the pull-up transistor is greater than a width of a second channel region of the pull-down transistor.

Abstract: A semiconductor device includes a lower substrate, a memory cell structure including a wordline on the lower substrate, a bitline disposed on the lower substrate and intersecting the wordline, and a cell capacitor connected to the lower substrate, an upper substrate having a back side adjacent to the lower substrate and a front side opposite to the back side, a circuit element disposed on the front side of the upper substrate and overlapping the memory cell structure in a vertical direction, and a through via penetrating the upper substrate and electrically connecting the memory cell structure and the circuit element with each other.

Abstract: A display device includes a light emitting element disposed on a substrate, a first transistor which controls a driving current flowing in the light emitting element, a second transistor which supplies a data voltage to a gate electrode of the first transistor, a first-third transistor and a second-third transistor connected in series between the gate and drain electrodes of the first transistor, a first charge injection layer adjacent to a drain electrode of the first-third transistor electrically connected to the gate electrode of the first transistor on a semiconductor region of the first-third transistor, and a second charge injection layer adjacent to a source electrode of the second-third transistor integrally formed with the drain electrode of the first transistor on a semiconductor region of the second-third transistor. A charge injection area of the first charge injection layer is greater than a charge injection area of the second charge injection layer.

Abstract: A semiconductor memory device including an active pattern on a first substrate and comprising a first and second surfaces opposite to each other in a first direction, a data storage pattern between the active pattern and the first substrate and connected to a first surface of the active pattern, a bit line on the active pattern, connected to a second surface of the active pattern, and extending in a second direction, a word line on a sidewall of the active pattern, a second substrate, a peripheral gate structure on a first surface of the second substrate, a first connection wiring structure on the first surface of the second substrate and connected to the peripheral gate structure and bit line, a second connection wiring structure on a second surface of the second substrate and a through via penetrating the second substrate and connecting the first and second connection wiring structures.

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Abstract: The present invention provides method and apparatus for purifying exhaust gas of a vessel and a vessel including the same, in which a risk for a vessel and crew of being exposed to ammonia gas used to collect carbon dioxide included in exhaust gas emitted from a vessel may be minimized and an ammonia solution may be recycled and reused to collect carbon dioxide, in order to satisfy regulations on discharge of exhaust gas by the IMO. Also, the present invention provides an apparatus 1000 for purifying exhaust gas of a vessel and a method of purifying exhaust gas of a vessel using the same, in which carbon dioxide and sulfur dioxide included in exhaust gas emitted from a vessel may be collected by using a reaction solution and may be changed into a substance that does not affect the environment so as to be stored and transported to land.

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Abstract: A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

Abstract: A display device including a pixel electrode, and a pixel circuit electrically connected to the pixel electrode. The pixel circuit includes a first transistor including sub-transistors electrically connected to each other through a first common node, a second transistor including sub-transistors electrically connected to each other through a second common node, a first electrode electrically connecting the first common node with the second common node, and a second electrode disposed to overlap the first electrode and electrically connected to a direct current power source.

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 ?m to about 2 ?m, and a length of the channel of the third transistor is in a range of about 1 ?m to about 2.5 ?m.

Abstract: A flexible display device includes: a flexible substrate; a semiconductor layer on the flexible substrate, the semiconductor layer including a polycrystalline semiconductor; a gate insulation layer on the semiconductor layer; and a gate electrode on the gate insulation layer, the gate electrode overlapping a channel region of the semiconductor layer in a plan view, wherein the semiconductor layer includes a source region and a drain region that are at opposite sides of the channel region, wherein the channel region includes a first region contacting the source region and a second region contacting the drain region, and wherein a channel width of the first region is greater than a channel width of the second region.

Abstract: A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 ?m to about 2 ?m, and a length of the channel of the third transistor is in a range of about 1 ?m to about 2.5 ?m.

Abstract: A pixel includes: a light emitting element; a first transistor including a first electrode connected to a first power line, to which a voltage of the first power supply is supplied, where the first transistor controls, in response to a voltage of a first node connected to a gate electrode thereof, current flowing from the first power line to a second power line, to which a voltage of a second power supply is supplied, via the light emitting element; a second transistor connected between a data line and a second node, where the second transistor is turned on when a first scan signal is supplied thereto through a first scan line; a first capacitor connected between the first node and the second node; and a connector electrically connected between the first node to the second node.