Abstract: An image sensor may include: a pixel array in which a plurality of pixels are arranged in a matrix, including a first pixel and a second pixel disposed adjacent to each other, each of the plurality of pixels includes: at least one photoelectric conversion device; at least one floating diffusion region to which charges of the at least one photoelectric conversion device are configured to be transferred; a reset transistor configured to transfer a voltage at a reset node to the at least one floating diffusion region; a source follower transistor having one end connected to a pixel voltage node and configured to output a sampling voltage corresponding to charges of the at least one floating diffusion region; and a select transistor having one end connected to the source follower transistor and configured to output the sampling voltage to an output node.

Abstract: An image sensor includes a pixel array in which pixels having photoelectric conversion elements are arranged in a matrix, color filters corresponding to the pixels and configured to selectively transmit light of at least two different wavelength bands, and microlenses on the color filters. At least some of the microlenses may have different shapes depending on respective wavelength bands that respective corresponding color filters at least partially overlapping with the at least some microlenses are configured to selectively transmit, such that the at least some microlenses are configured to compensate for chromatic aberration between the lights passing through the respective corresponding color filters.

Abstract: The present disclosure relates to image sensors. An example image sensor includes a first substrate, a transmission transistor, a second substrate, multiple transistors, multiple wires, and a deep node. The first substrate includes a first side, a second side facing the first side, and a photoelectric conversion area. The transmission transistor is disposed on the first side of the first substrate. The second substrate includes a first side and a second side facing each other. The transistors are disposed on the first side of the second substrate and connected with the transmission transistor. The wires are disposed on the second side of the second substrate. The deep node penetrates the second substrate. The first side of the first substrate and the first side of the second substrate face each other. The transistors and one or more wires are connected through the deep node.

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Abstract: A probe device includes an optical fiber array including an optical fiber to be in optical communication with an optical integrated circuit board, the optical integrated circuit board including an optical coupling element and a reflection mirror, a base substrate fixing the optical fiber, and an intermediate substrate including a hole into which the optical fiber is inserted, and a probe mirror to reflect an optical signal between the reflection mirror and the optical coupling element.

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Abstract: Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

Abstract: Photonic integrated circuit packages having improved integration, and methods of manufacturing such photonic integrated circuit packages, are provided. As an example, a photonic integrated circuit package may include a substrate, a first insulating layer on the substrate, a photonic core layer on the first insulating layer, and a second insulating layer on the photonic core layer. A photonic coupling device may be in the photonic core layer, and may be, as examples, at least one of a grating coupler or a photodetector. A concave mirror may extend into at least the second insulating layer. In some embodiments, the concave mirror may extend through the second insulating layer and into the first insulating layer.

Abstract: A photonic integrated circuit package includes a first substrate including a first mirror and an optical coupling device spaced apart from each other, and a second substrate on an upper portion of the first substrate, the second substrate including an electro-optical converter and a second mirror, the electro-optical converter to output an optical signal to the first mirror, and the second mirror to reflect an optical signal reflected by and received from the first mirror to the optical coupling device.

Abstract: A probe device includes an optical fiber array including an optical fiber to be in optical communication with an optical integrated circuit board, the optical integrated circuit board including an optical coupling element and a reflection mirror, a base substrate fixing the optical fiber, and an intermediate substrate including a hole into which the optical fiber is inserted, and a probe mirror to reflect an optical signal between the reflection mirror and the optical coupling element.

Abstract: A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Abstract: An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Abstract: A semiconductor device includes a first device and a second device. The first device includes at least one waveguide on a first substrate. The second device is on the first device and includes at least one optical fiber on an upper surface of a second substrate, a reflector on the upper surface of the second substrate, and a lens on a lower surface of the second substrate below the reflector. The at least one waveguide to carry light from the reflector and passing through the lens for output to the optical fiber.