Abstract: A semiconductor package including a first semiconductor chip including a logic structure and a second semiconductor chip bonded to the first semiconductor chip may be provided. The first semiconductor chip may include signal lines on a first surface of a first semiconductor substrate and connected to the logic structure, a power delivery network on a second surface of the first semiconductor substrate, the second surface being opposite to the first surface, and penetration vias penetrating the first semiconductor substrate and connecting the power delivery network to the logic structure. The second semiconductor chip may include a capacitor layer that is on a second semiconductor substrate and is adjacent to the power delivery network.

Abstract: A semiconductor package including a first semiconductor chip including a logic structure and a second semiconductor chip bonded to the first semiconductor chip may be provided. The first semiconductor chip may include signal lines on a first surface of a first semiconductor substrate and connected to the logic structure, a power delivery network on a second surface of the first semiconductor substrate, the second surface being opposite to the first surface, and penetration vias penetrating the first semiconductor substrate and connecting the power delivery network to the logic structure. The second semiconductor chip may include a capacitor layer that is on a second semiconductor substrate and is adjacent to the power delivery network.

Abstract: A semiconductor package includes a package substrate, a power module on a first surface of the package substrate, a connector on the first surface of the package substrate, the connector being horizontally spaced apart from the power module, a first semiconductor chip on a second surface of the package substrate opposite to the first surface, and a first heat radiator on the second surface of the package substrate, the first heat radiator covering the first semiconductor chip. The first semiconductor chip vertically overlaps the power module, and the first semiconductor chip is electrically connected through the package substrate to the power module.

Abstract: A semiconductor package includes a redistribution substrate and a semiconductor chip thereon. The redistribution substrate includes a ground under-bump pattern, signal under-bump patterns laterally spaced apart from the ground under-bump pattern, first signal line patterns disposed on the signal under-bump patterns and coupled to corresponding signal under-bump patterns, and a first ground pattern coupled to the ground under-bump pattern and laterally spaced apart from the first signal line pattern. Each of the signal and ground under-bump patterns includes a first part and a second part formed on the first part and that is wider than the first part. The second part of the ground under-bump pattern is wider than the second part of the signal under-bump pattern. The ground under-bump pattern vertically overlaps the first signal line patterns. The first ground pattern does not vertically overlap the signal under-bump patterns.

Abstract: A semiconductor package includes a redistribution substrate and a semiconductor chip thereon. The redistribution substrate includes a ground under-bump pattern, signal under-bump patterns laterally spaced apart from the ground under-bump pattern, first signal line patterns disposed on the signal under-bump patterns and coupled to corresponding signal under-bump patterns, and a first ground pattern coupled to the ground under-bump pattern and laterally spaced apart from the first signal line pattern. Each of the signal and ground under-bump patterns includes a first part and a second part formed on the first part and that is wider than the first part. The second part of the ground under-bump pattern is wider than the second part of the signal under-bump pattern. The ground under-bump pattern vertically overlaps the first signal line patterns. The first ground pattern does not vertically overlap the signal under-bump patterns.

Abstract: A semiconductor package including a first semiconductor chip including a logic structure and a second semiconductor chip bonded to the first semiconductor chip may be provided. The first semiconductor chip may include signal lines on a first surface of a first semiconductor substrate and connected to the logic structure, a power delivery network on a second surface of the first semiconductor substrate, the second surface being opposite to the first surface, and penetration vias penetrating the first semiconductor substrate and connecting the power delivery network to the logic structure. The second semiconductor chip may include a capacitor layer that is on a second semiconductor substrate and is adjacent to the power delivery network.

Abstract: A semiconductor package includes a redistribution substrate and a semiconductor chip thereon. The redistribution substrate includes a ground under-bump pattern, signal under-bump patterns laterally spaced apart from the ground under-bump pattern, first signal line patterns disposed on the signal under-bump patterns and coupled to corresponding signal under-bump patterns, and a first ground pattern coupled to the ground under-bump pattern and laterally spaced apart from the first signal line pattern Each of the signal and ground under-bump patterns includes a first part and a second part formed on the first part and that is wider than the first part. The second part of the ground under-bump pattern is wider than the second part of the signal under-bump pattern. The ground under-bump pattern vertically overlaps the first signal line patterns. The first ground pattern does not vertically overlap the signal under-bump patterns.

Abstract: A substrate includes a substrate body including a plurality of chip mounting regions and a peripheral region surrounding the plurality of chip mounting regions, each of the chip mounting regions including a conductive plane. The substrate further includes a conductive support structure located in the peripheral region, first conductive lines connected between the conductive planes of adjacent chip mounting regions, and second conductive lines connected between the conductive support structure and the conductive planes of chip mounting regions located adjacent the peripheral region.

Abstract: According to example embodiments, an image display panel assembly includes a flexible printed circuit (FPC), an image display panel, at least one gate driver integrated circuit (IC) package, and at least one source driver IC package. The FPC is configured to receive gate and source driving signals. The image display panel is electrically connected to the FPC, and includes a gate driving signal transfer pattern along a first edge of the image display panel, a source driving signal transfer pattern along a second edge adjacent to the first end, and a plurality of pixels. The at least one gate driver integrated circuit (IC) package is configured to receive the gate driving signal through the gate driving signal transfer pattern and configured to provide the gate driving signal to gate lines of the plurality of pixels.

Abstract: A semiconductor package includes a first package and a second package stacked on the first package. The first package includes a redistribution substrate, a first semiconductor chip on the redistribution substrate, a connection substrate provided on the redistribution substrate to surround the first semiconductor chip as viewed in plan, and an inductor structure provided within a first region of the connection substrate and electrically connected to the first semiconductor chip through the redistribution substrate. The second package includes at least one outer terminal electrically connected to the first package. The outer terminal is provided on a second region of the connection substrate, and when viewed in plan, the first region and the second region are spaced apart from each other.

Abstract: A semiconductor package includes a first package and a second package stacked on the first package. The first package includes a redistribution substrate, a first semiconductor chip on the redistribution substrate, a connection substrate provided on the redistribution substrate to surround the first semiconductor chip as viewed in plan, and an inductor structure provided within a first region of the connection substrate and electrically connected to the first semiconductor chip through the redistribution substrate. The second package includes at least one outer terminal electrically connected to the first package. The outer terminal is provided on a second region of the connection substrate, and when viewed in plan, the first region and the second region are spaced apart from each other.

Abstract: A semiconductor memory device includes a first memory die having a first termination resistor for an on-die termination and a second memory die having a second termination resistor for an on-die termination and formed on the first memory die. Each of the first and second memory dies has a center pad type and operates based on a multi-rank structure. When the first memory die is accessed, the second termination resistor is connected to the second memory die, and when the second memory die is accessed, the first termination resistor is connected to the first memory die.

Abstract: A semiconductor package includes a package substrate including a first region, a thermal block penetrating the first region and exposed at top and bottom surfaces of the package substrate, a semiconductor chip on the package substrate, bumps disposed between the package substrate and the semiconductor chip and including first bumps being in contact with the thermal block, and terminals disposed on the bottom surface of the package substrate and including first terminals being in contact with the thermal block. The thermal block is one of a power path and a ground path.

Abstract: A semiconductor memory device includes a first memory die having a first termination resistor for an on-die termination and a second memory die having a second termination resistor for an on-die termination and formed on the first memory die. Each of the first and second memory dies has a center pad type and operates based on a multi-rank structure. When the first memory die is accessed, the second termination resistor is connected to the second memory die, and when the second memory die is accessed, the first termination resistor is connected to the first memory die.

Abstract: A semiconductor memory device includes a first memory die having a first termination resistor for an on-die termination and a second memory die having a second termination resistor for an on-die termination and formed on the first memory die. Each of the first and second memory dies has a center pad type and operates based on a multi-rank structure. When the first memory die is accessed, the second termination resistor is connected to the second memory die, and when the second memory die is accessed, the first termination resistor is connected to the first memory die.

Abstract: A semiconductor package may include a package substrate with a top surface and a bottom surface opposite to the top surface, the top surface of the package substrate configured to have a semiconductor chip mounted thereon, a power block and a ground block in the package substrate, the power block configured as a power pathway penetrating the package substrate, and the ground block configured as a ground pathway penetrating the package substrate, first vias extended from the power block and the ground block, and the first vias electrically connected to the semiconductor chip, second vias extended from the power block and the ground block toward the bottom surface of the package substrate, and block vias to penetrate the power block and the ground block, the block vias electrically connected to the semiconductor chip and electrically separated from the power block and the ground block.

Abstract: According to example embodiments, an image display panel assembly includes a flexible printed circuit (FPC), an image display panel, at least one gate driver integrated circuit (IC) package, and at least one source driver IC package. The FPC is configured to receive gate and source driving signals. The image display panel is electrically connected to the FPC, and includes a gate driving signal transfer pattern along a first edge of the image display panel, a source driving signal transfer pattern along a second edge adjacent to the first end, and a plurality of pixels. The at least one gate driver integrated circuit (IC) package is configured to receive the gate driving signal through the gate driving signal transfer pattern and configured to provide the gate driving signal to gate lines of the plurality of pixels.

Abstract: A semiconductor memory device includes a first memory die having a first termination resistor for an on-die termination and a second memory die having a second termination resistor for an on-die termination and formed on the first memory die. Each of the first and second memory dies has a center pad type and operates based on a multi-rank structure. When the first memory die is accessed, the second termination resistor is connected to the second memory die, and when the second memory die is accessed, the first termination resistor is connected to the first memory die.

Abstract: An image display panel assembly includes a flexible printed circuit (FPC), an image display panel, a gate driver integrated circuit (IC) package, and a source driver IC package. The FPC is configured to receive gate and source driving signals. The image display panel is electrically connected to the FPC, and includes a gate driving signal transfer pattern along a first edge of the image display panel, a source driving signal transfer pattern along a second edge adjacent to the first end, and a plurality of pixels. The gate driver integrated circuit (IC) package is configured to receive the gate driving signal through the gate driving signal transfer pattern and provide the gate driving signal to the plurality of pixels. The source driver IC package is configured to receive the source driving signal through the source driving signal transfer pattern and provide the source driving signal to the plurality of pixels.

Abstract: Provided is a semiconductor package including a semiconductor chip having one surface on which chip pads are formed, and a redistribution structure formed on the one surface of the semiconductor chip. The redistribution structure includes a redistribution layer connected to the chip pads and a redistribution insulating layer interposed between the semiconductor chip and the redistribution layer. The redistribution insulating layer includes a first insulating portion having a first dielectric constant and a second insulating portion having a second dielectric constant that is different from the first dielectric constant. The first insulating portion and the second insulating portion are connected to each other in a horizontal direction.