Patents by Inventor Keung Hui

Keung Hui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10096482
    Abstract: An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: October 9, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Keung Hui, Jin-Ning Sung, Jong-I Mou, Soon-Kang Huang, Yen-Di Tsen
  • Patent number: 9323244
    Abstract: Among other things, one or more systems and techniques for retuning a semiconductor fabrication component are provided. The semiconductor fabrication component, such as an advanced process control (APC) component, is configured to evaluate or adjust various fabrication parameters associated with semiconductor fabrication processing. Processing data associated with the semiconductor fabrication component is evaluated to formulate performance indices used to evaluate performance of parameters used by the semiconductor fabrication component. One or more fabrication process change simulations are performed to generate a component operating behavior data structure indicating how different values for the parameters result in improved or degraded performance by the semiconductor fabrication component. In this way, the component operating behavior data structure is evaluated to identify tuning values for the parameters that are used to retune the semiconductor fabrication component.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: April 26, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Keung Hui, Cheng Yen-Wei, Jong-I Mou
  • Publication number: 20150348797
    Abstract: An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
    Type: Application
    Filed: August 10, 2015
    Publication date: December 3, 2015
    Inventors: Keung Hui, Jin-Ning Sung, Jong-I Mou, Soon-Kang Huang, Yen-Di Tsen
  • Patent number: 9158301
    Abstract: An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: October 13, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sunny Wu, Yen-Di Tsen, Chun-Hsien Lin, Keung Hui, Jo Fei Wang, Jong-I Mou
  • Patent number: 9132523
    Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: September 15, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shen-Nan Lee, Ying-Mei Lin, Yu-Jen Cheng, Keung Hui, Huan-Just Lin
  • Patent number: 9102033
    Abstract: An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: August 11, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keung Hui, Jin-Ning Sung, Huang Soon Kang, Yen-Di Tsen, Jong-I Mou
  • Publication number: 20150081081
    Abstract: Among other things, one or more systems and techniques for retuning a semiconductor fabrication component are provided. The semiconductor fabrication component, such as an advanced process control (APC) component, is configured to evaluate or adjust various fabrication parameters associated with semiconductor fabrication processing. Processing data associated with the semiconductor fabrication component is evaluated to formulate performance indices used to evaluate performance of parameters used by the semiconductor fabrication component. One or more fabrication process change simulations are performed to generate a component operating behavior data structure indicating how different values for the parameters result in improved or degraded performance by the semiconductor fabrication component. In this way, the component operating behavior data structure is evaluated to identify tuning values for the parameters that are used to retune the semiconductor fabrication component.
    Type: Application
    Filed: September 18, 2013
    Publication date: March 19, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Keung Hui, Cheng Yen-Wei, Jong-I Mou
  • Patent number: 8925479
    Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
    Type: Grant
    Filed: November 12, 2012
    Date of Patent: January 6, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keung Hui, Chun-Lin Chang, Jong-I Mou
  • Publication number: 20140303765
    Abstract: An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
    Type: Application
    Filed: June 19, 2014
    Publication date: October 9, 2014
    Inventors: Sunny Wu, Yen-Di Tsen, Chun-Hsien Lin, Keung Hui, Jo Fei Wang, Jong-I Mou
  • Patent number: 8781614
    Abstract: An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: July 15, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sunny Wu, Yen-Di Tsen, Chun-Hsien Lin, Keung Hui, Jo Fei Wang, Jong-I Mou
  • Publication number: 20130013097
    Abstract: An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 10, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sunny Wu, Yen-Di Tsen, Chun-Hsien Lin, Keung Hui, Jo Fei Wang, Jong-I Mou
  • Patent number: 8309444
    Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: November 13, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keung Hui, Chun-Lin Chang, Jong-I Mou
  • Patent number: 8294124
    Abstract: An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: October 23, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Keung Hui, Chun-Lin Chang
  • Patent number: 8295965
    Abstract: An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: October 23, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sunny Wu, Yen-Di Tsen, Chun-Hsien Lin, Keung Hui, Jo Fei Wang, Jong-I Mou
  • Publication number: 20120164918
    Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
    Type: Application
    Filed: March 5, 2012
    Publication date: June 28, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shen-Nan Lee, Ying-Mei Lin, Yu-Jen Cheng, Keung Hui, Huan-Just Lin
  • Publication number: 20120129431
    Abstract: An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
    Type: Application
    Filed: November 24, 2010
    Publication date: May 24, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: KEUNG HUI, Jin-Ning Sung, Huang Soon Kang, Yen-Di Tsen, Jong-I Mou
  • Patent number: 8129279
    Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
    Type: Grant
    Filed: October 13, 2008
    Date of Patent: March 6, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shen-Nan Lee, Ying-Mei Lin, Yu-Jen Cheng, Keung Hui, Huan-Just Lin
  • Publication number: 20120016509
    Abstract: An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
    Type: Application
    Filed: July 19, 2010
    Publication date: January 19, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sunny Wu, Yen-Di Tsen, Chun-Hsien Lin, Keung Hui, Jo Fei Wang, Jong-I Mou
  • Publication number: 20120009692
    Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
    Type: Application
    Filed: July 7, 2010
    Publication date: January 12, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keung Hui, Chun-Lin Chang, Jong-I Mou
  • Publication number: 20110174991
    Abstract: An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.
    Type: Application
    Filed: January 15, 2010
    Publication date: July 21, 2011
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Keung HUI, Chun-Lin CHANG