Abstract: A Group 3a ink, comprising, as initial components: a polyamine solvent; a Group 3a material/organic complex; and, a reducing agent; wherein the molar concentration of the reducing agent exceeds the molar concentration of the Group 3a material/organic complex; wherein the Group 3a ink is a stable dispersion and wherein the Group 3a ink is hydrazine and hydrazinium free. Also provided are methods of preparing the Group 3a ink and of using the Group 3a ink to deposit a Group 3a material on a substrate for use in a variety of semiconductor applications, such as metallization of silicon devices in VLSI technology, the growth of semiconducting III-V alloys, thin film transistors (TFTs), light emitting diodes (LEDs); and infrared detectors.

Abstract: A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; a carboxylic acid component having a formula R—COOH, wherein R is selected from a C1-10 alkyl, C1-10 haloalkyl and a C1-10 mercaptoalkyl; a Group 3a complex, comprising at least one Group 3a material selected from aluminum, indium, gallium and thallium complexed with a multidentate ligand; and, (b) a liquid carrier; wherein the selenium/Group 3a complex is stably dispersed in the liquid carrier.

Abstract: A method for preparing a Group 1a-1b-3a-6a material using a selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion.

Abstract: A method for preparing a Group 1a-1b-3a-6a material using a selenium ink comprising a chemical compound having a formula RZ—Sex—Z?R? stably dispersed in a liquid carrier is provided, wherein the selenium ink is hydrazine free and hydrazinium free.

Abstract: A selenium ink comprising a chemical compound having a formula RZ—Sex—Z?R? stably dispersed in a liquid carrier is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the selenium ink and of using the selenium ink to deposit selenium on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.

Abstract: A selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion.

Abstract: A selenium/Group Ib/Group 3a ink is provided, comprising, as initial components: (a) a selenium/Group Ib/Group 3a system which comprises a combination of, as initial components: a selenium; an organic chalcogenide component; a Group Ib containing substance; optionally, a bidentate thiol component; a Group 3a containing substance; and, (b) a liquid carrier component; wherein the selenium/Group Ib/Group 3a system is stably dispersed in the liquid carrier component. Also provided are methods of preparing the selenium/Group Ib/Group 3a ink and for using the selenium/Group Ib/Group 3a ink to deposit a selenium/Group Ib/Group 3a material on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e.g., electrophotography (e.g.

Abstract: A selenium ink comprising selenium stably dispersed in a liquid medium is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the selenium ink and of using the selenium ink to deposit selenium on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photo responsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photo voltaic cells) and chalcogenide containing phase change memory materials.

Abstract: A selenium/Group 1b/Group 3a ink is provided, comprising, as initial components: (a) a selenium/Group 1b/Group 3a system which comprises a combination of, as initial components: a selenium; an organic chalcogenide component: comprising at least one organic chalcogenide having a formula selected from RZ—Z?R? and R2—SH; wherein Z and Z? are independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, a C1-20 mercaptoalkyl group and an ether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, a C1-20 mercaptoalkyl group and an ether group; a Group 1b containing substance comprising, as an initial component, at least one of CuCl2 and Cu2O; optionally, a bidentate thiol component; a Group 3a containing substance comprising, as an initial component: a Group 3a material selected from aluminum, indium, gallium and combinations thereof; and, (b) a liquid carrier co

Abstract: A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, an arylether group and an alkylether group; and, a Group 3a complex, comprising at least one Group 3a material selected from aluminum, indium, gallium and thallium complexed with a multidentate ligand; and, (b) a liquid carrier; wherein the selenium/Group 3a complex is stably dispersed in the liquid carrier.

Abstract: A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, an arylether group and an alkylether group; and, a Group 3a complex, comprising at least one Group 3a material selected from aluminum, indium, gallium and thallium complexed with a multidentate ligand; and, (b) a liquid carrier; wherein the selenium/Group 3a complex is stably dispersed in the liquid carrier.

Abstract: A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; a carboxylic acid component having a formula R—COOH, wherein R is selected from a C1-10 alkyl, C1-10 haloalkyl and a C1-10 mercaptoalkyl; a Group 3a complex, comprising at least one Group 3a material selected from aluminum, indium, gallium and thallium complexed with a multidentate ligand; and, (b) a liquid carrier; wherein the selenium/Group 3a complex is stably dispersed in the liquid carrier.

Abstract: A Group 3a ink, comprising, as initial components: a polyamine solvent; a Group 3a material/organic complex; and, a reducing agent; wherein the molar concentration of the reducing agent exceeds the molar concentration of the Group 3a material/organic complex; wherein the Group 3a ink is a stable dispersion and wherein the Group 3a ink is hydrazine and hydrazinium free. Also provided are methods of preparing the Group 3a ink and of using the Group 3a ink to deposit a Group 3a material on a substrate for use in a variety of semiconductor applications, such as metallization of silicon devices in VLSI technology, the growth of semiconducting III-V alloys, thin film transistors (TFTs), light emitting diodes (LEDs); and infrared detectors.

Abstract: A selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion.

Abstract: A selenium ink comprising, as initial components: a liquid carrier; a selenium component comprising selenium; and, an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein the selenium ink comprises ?1 wt % selenium; wherein the selenium ink is a stable dispersion and wherein the selenium ink is hydrazine and hydrazinium free.

Abstract: A selenium ink comprising a chemical compound having a formula RZ-Sex-Z?R? stably dispersed in a liquid carrier is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the selenium ink and of using the selenium ink to deposit selenium on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.