Abstract: Integrated circuit (IC) devices and systems with backside power gates, and methods of forming the same, are disclosed herein. In one embodiment, an integrated circuit die includes a device layer with one or more transistors, a first interconnect over the device layer, a second interconnect under the device layer, and one or more power gates under the device layer.

Abstract: Techniques and mechanisms for providing gate dielectric structures of a transistor. In an embodiment, the transistor comprises a thin channel structure which comprises one or more layers of a transition metal dichalcogenide (TMD) material. The channel structure forms two surfaces on opposite respective sides thereof, wherein the surfaces extend to each of two opposing edges of the channel structure. A composite gate dielectric structure comprises first bodies of a first dielectric material, wherein the first bodies each adjoin a different respective one of the two opposing edges, and variously extend to each of the surfaces two surfaces. The composite gate dielectric structure further comprises another body of a second dielectric material other than the first dielectric material. In another embodiment, the other body adjoins one or both of the two surfaces, and extends along one or both of the two surfaces to each of the first bodies.

Abstract: Integrated circuit structures having internal spacers for 2D channel materials, and methods of fabricating integrated circuit structures having internal spacers for 2D channel materials, are described. For example, an integrated circuit structure includes a stack of two-dimensional (2D) material nanowires. A gate structure is vertically around the stack of 2D material nanowires. Internal gate spacers are between vertically adjacent ones of the stack of 2D material nanowires and laterally adjacent to the gate structure. The 2D material nanowires are recessed relative to the internal gate spacers. Conductive contact structures are at corresponding ends of the stack of 2D material nanowires, the conductive contact structures adjacent to the internal gate spacers and vertically overlapping with the internal gate spacers.

Abstract: A low strain transfer protective layer is formed on a transition metal dichalcogenide (TMD) monolayer to enable the transfer of the TMD monolayer from a growth substrate to a target substrate with little or no strain-induced damage to the TMD monolayer. Transfer of a TMD monolayer from a growth substrate to a target substrate comprises two transfers, a first transfer from the growth substrate to a carrier wafer and a second transfer from the carrier wafer to the target substrate. Transfer of the TMD monolayer from the growth substrate to the carrier wafer comprises mechanically lifting off the TMD monolayer from the growth substrate. The low strain transfer protective layer can limit the amount of strain transferred from the carrier wafer to the TMD monolayer during lift-off. The carrier wafer and protective layer are separated from the TMD monolayer after attachment of the TMD monolayer to the target substrate.

Abstract: A transistor includes a first channel layer over a second channel layer, where the first and the second channel layers include a monocrystalline transition metal dichalcogenide (TMD). The transistor structure further includes a source structure coupled to a first end of the first and second channel layers, a drain structure coupled to a second end of the first and second channel layers, a gate structure between the source material and the drain material, and between the first channel layer and the second channel layer. The transistor further includes a spacer laterally between the gate structure and the and the source structure and between the gate structure and the drain structure. A liner is between the spacer and the gate structure. The liner is in contact with the first channel layer and the second channel layer and extends between the gate structure and the respective source structure and the drain structure.

Abstract: Transistor structures with monocrystalline metal chalcogenide channel materials are formed from a plurality of template regions patterned over a substrate. A crystal of metal chalcogenide may be preferentially grown from a template region and the metal chalcogenide crystals then patterned into the channel region of a transistor. The template regions may be formed by nanometer-dimensioned patterning of a metal precursor, a growth promoter, a growth inhibitor, or a defected region. A metal precursor may be a metal oxide suitable, which is chalcogenated when exposed to a chalcogen precursor at elevated temperature, for example in a chemical vapor deposition process.

Abstract: Hybrid bonding interconnect (HBI) architectures for scalability. Embodiments implement a bonding layer on a semiconductor die that includes a thick oxide layer overlaid with a thin layer of a hermetic material including silicon and at least one of carbon and nitrogen. The conductive bonds of the semiconductor die are placed in the thick oxide layer and exposed at the surface of the hermetic material. Some embodiments implement a non-bonding moisture seal ring (MSR) structure.

Abstract: A method and a device for locking an equipment with a rack are presented. The device may include a trigger and an equipment locking mechanism, wherein upon the trigger automatically activates the equipment locking mechanism upon contacting a portion of the rack. The automatic locking initiates when the equipment reaches a desired position within the rack.

Abstract: Location graph-based derivation of user attributes is disclosed. In various embodiments, location data associated with a user, such as a current and/or past location at which the user has been, is received. A user attribute data associated with the location data is determined and used to update a user profile associated with the user.

Abstract: Combining attributes from multiple sources is disclosed. Location data of a mobile device is received. The location data is mapped to a location boundary of a defined location. It is determined that a user profile is associated with the defined location based at least in part on the mapping and one or more location-based rules. The user profile is updated to include third-party data associated with the defined location.

Abstract: Measuring advertising effectiveness is disclosed. Attribute data included in a first user profile may be used to select a second user profile that is substantially similar to the first user profile. First behavior information may be determined based at least in part on an association between the first user profile and a location associated with an advertising content data. The first user profile may include an indication of exposure to the advertising content data and the second user profile does not. Second behavior information may be determined based at least in part on an association between the second user profile and the location. An advertising effectiveness value may be generated based at least in part on the first behavior information and the second behavior information.

Abstract: Location graph-based derivation of user attributes is disclosed. In various embodiments, location data associated with a user, such as a current and/or past location at which the user has been, is received. A user attribute data associated with the location data is determined and used to update a user profile associated with the user.

Abstract: Location graph-based derivation of user attributes is disclosed. In various embodiments, location data associated with a user, such as a current and/or past location at which the user has been, is received. A user attribute data associated with the location data is determined and used to update a user profile associated with the user.

Abstract: The present invention relates to a pen structure, more particularly, a pen with the functions of illumination and logo indication, which comprises a main body and an illuminant, wherein the lower portion of the main body is a pen instrument for writing and the upper portion is a housing member with a lateral aperture. The inner surface of the housing member is reflective. The illuminant consists of a transparent barrel, a LED, a push-button switch, a plurality of batteries and a tail cap. The functions of illumination and logo indication can be served respectively by the interactive reflection of the inner surface while placing the illuminant from different ends thereof in the housing member.