Abstract: In one or more arrangements, a stationary cross cut system includes a base having an upper surface configured to receive a workpiece during a cutting operation. The system also includes first and second extendable support wings connected to the base. When extended, the first support wing supports a workpiece that extends past the first side of the base and the second support supports a workpiece that extends past the second side of the base. In some arrangements, the base includes first and second fences and is configured to receive the workpiece between the first and second fences. In some arrangements, the system also includes a first rail extending between the first fence and the second fence and a second rail extending between the first fence and the second fence. The first rail and second rail are configured to receive and guide a cutting tool during the cutting operation.

Abstract: A portable cross cut system is presented that includes a main body having a reference edge configured to be aligned against an edge of a workpiece and an engagement member configured to be laid on top of the workpiece. A first guide edge extends along an outward edge of the main body and the engagement member and is configured to guide an edge of a baseplate of a cutting tool during a cutting operation. The main body includes a blade offset member having an arm that moves between an extended position and a retracted position. When the arm is extended the outward end of the arm indicates the position of a cut line so that the user can easily align the position of the portable cross cut system to easily and accurately make cuts in a workpiece.

Abstract: A straight edge guide system is presented that makes clamping of a workpiece faster and easier. The straight edge guide system includes a guide member that extends a length from a first end to a second end. A clamp member is connected to the first end of the guide member and includes a compressible bias member therein. An adjustable stop member is connected to the guide member that moves between a locked position and a free position. When the adjustable stop member is in the free position, the adjustable stop member slides along the length of the guide member. When the straight edge guide system is placed on top of a workpiece, the workpiece is clamped under spring bias force between the clamp member and the stop member.

Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Abstract: Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level, a second power level, and a third power level, providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level, a second power level, and a third power level, and processing the substrate using the first multi-level RF power waveform and the second multi-level RF power waveform to produce a features on the substrate have an aspect ratio of greater than 60:1 while maintaining an etch rate of greater than 170 nm/min.

Abstract: A power amplifier includes at least one amplification path comprising at least a first amplification device and a second amplification device, where the first amplification device has a common control terminal to provide amplification when biased on and to prevent conduction of a signal through the amplification path when biased off.

Abstract: A power amplifier includes at least one amplification path comprising at least a first amplification device and a second amplification device, where the first amplification device has a common control terminal to provide amplification when biased on and to prevent conduction of a signal through the amplification path when biased off.