Abstract: This invention relates to novel whitening agents for cellulosic substrates. The whitening agents are comprised of at least two components: at least one chromophore component and at least one polymeric component. Suitable chromophore components generally fluoresce blue, red, violet, or purple color when exposed to ultraviolet light, or they may absorb light to reflect these same shades. The whitening agents are further characterized by having a dispersion component value of the Hansen Solubility Parameter of less than or equal to about 17 MPa0.5. This invention also relates to laundry care compositions including but not limited to liquid and/or powder laundry detergent formulations and rinse added fabric softening (RAFS) compositions that comprise such whitening agents.

Abstract: A passivating layer (220) is formed overlying portions of a mask (200). The mask (200) is used to pattern a semiconductor device substrate (62). In accordance with one embodiment of the present invention, the passivating layer (220) is removed prior to patterning the semiconductor device substrate (62). In yet another embodiment, the passivating layer (220) is cleaned prior to patterning the semiconductor device substrate (62) and then left to remain overlying portions of the mask (200) during the patterning process.

Abstract: A method of fabricating an X-ray mask including forming a membrane layer on a wafer and forming a layer of X-ray absorbing material on the membrane layer. A pattern is defined on the absorbing layer with positions that are predistorted in accordance with the following equations, and their extensions if desired:.DELTA.Y=M.sub.y Y+.delta.Y.DELTA.X=M.sub.x X+.delta.Xwhere:M.sub.y and M.sub.x are the X and Y magnification errors;.delta.Y includes the terms .alpha.X.sup.4 +.beta.X.sup.2 +.gamma. where,.alpha. includes the terms a.sub.1 Y.sup.3 +a.sub.2 Y.beta. includes the terms a.sub.3 Y.sup.3 +a.sub.4 Y.gamma. includes the terms a.sub.5 Y.sup.3 +a.sub.6 Y;and with corresponding equations for .delta.X. The pattern is then formed in the absorbing layer to form an X-ray mask.

Abstract: A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e.g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.

Abstract: A uniform heating fixture and method of use is provided. A heat conductive member having a first plane surface, a second surface and a third plane surface is formed. The first plane surface and the third plane surface are parallel and are connected by a second surface. The third plane surface circumscribes and extends away from the first plane surface, thereby enabling uniform heating of an X-ray mask.

Abstract: The use of neural networks has been employed to adjust processing during the fabrication of articles. For example, in the production of photolithographic masks by electron beam irradiation of a mask blank in a desired pattern, electrons scattered from the mask substrate cause distortion of the pattern. Adjustment for such scattering is possible during the manufacturing process by employing an adjustment function determined by a neural network whose parameters are established relative to a prototypical mask pattern.