Abstract: A vertical semiconductor component, in particular transistor, with a semiconductor layer structure for forming a semiconductor component on the basis of gallium nitride (GaN) and at least two, preferably three, electrodes arranged vertically one above the other. The semiconductor layer structure includes a contact semiconductor layer contacted by a vertically lower electrode. An intermediate layer for compensating for the lattice mismatch between a non-comprised foreign substrate and the contact semiconductor layer is arranged vertically below the contact semiconductor layer in some regions.

Abstract: A semiconductor component that is designed as a trench MISFET. The semiconductor component includes a substrate made of gallium nitride (GaN), a drift layer situated thereon, a barrier layer, and a source region situated thereabove. The source region includes a gate trench that extends from the source region into the underlying barrier layer.