Abstract: A semiconductor component with a semiconductor substrate. The semiconductor component has at least one source element, at least one drain element, and at least one field plate. In the semiconductor component, the at least one field plate encloses an edge of the semiconductor component and is electrically contacted with the drain element. A method for producing a semiconductor component is also described.

Abstract: A method for producing a power component based on a wide bandgap semiconductor. A device wafer with a substrate is provided. One or more functional layers are formed on the substrate that form the power component. At least one engineered layer is disposed between the functional layers and the substrate. The substrate is completely removed from the device wafer by selectively removing at least one engineered layer.

Abstract: A method for producing vertical power transistors. The method includes: applying a dielectric layer to a semiconductor material; applying a first photoresist layer to the dielectric layer; creating first openings having a first width in the first photoresist layer exposing first regions of the dielectric layer; etching the first regions of the dielectric layer to at least a specified depth of the dielectric layer such that a first structured dielectric layer is created; removing the first photoresist layer; applying a second photoresist layer to the first structured dielectric layer; creating second openings having a second width in the second photoresist layer exposing second regions of the dielectric layer; etching the second regions of the dielectric layer up to a surface of the semiconductor material such that a second structured dielectric layer is created; removing the second photoresist layer; and creating the first trenches and the second trenches.

Abstract: A vertical field-effect transistor structure. The vertical field-effect transistor structure has a semiconductor body having a first terminal zone, a drift zone, and a second terminal zone of a first conductivity type; a channel zone, arranged between the first and the second terminal zone, of the first or second conductivity type; a plurality of first trenches extending into the semiconductor body from the second terminal zone into the drift zone and form fins of the channel and second terminal zones; a control electrode arranged in the first trenches, which is arranged adjacent to the channel zone and insulated from the semiconductor body; a current path, connected between the first and the second terminal zone and in parallel with the channel zone, having at least one Schottky junction and being designed to conduct when a reverse voltage between the first and the second terminal zone is reached.

Abstract: A vertical field-effect transistor structure, and a method for producing the structure. The structure includes a semiconductor body having a first terminal zone, a drift zone, and a second terminal zone of a first conductivity type; a channel zone, between the first and the second terminal zone, of the first or second conductivity type; first trenches extending into the semiconductor body, which extend from the second terminal zone into the drift zone and form fins of the channel and second terminal zones; a control electrode arranged in the first trenches, adjacent to the channel zone and insulated from the semiconductor body; and a current path connected between the first and the second terminal zone and in parallel with the channel zone, the current path having at least one Schottky junction and which conducts when a reverse voltage between the first and the second terminal zones is reached.

Abstract: A vertical semiconductor component, in particular transistor, with a semiconductor layer structure for forming a semiconductor component on the basis of gallium nitride (GaN) and at least two, preferably three, electrodes arranged vertically one above the other. The semiconductor layer structure includes a contact semiconductor layer contacted by a vertically lower electrode. An intermediate layer for compensating for the lattice mismatch between a non-comprised foreign substrate and the contact semiconductor layer is arranged vertically below the contact semiconductor layer in some regions.

Abstract: A vertical semiconductor component, in particular transistor, with a semiconductor layer structure for forming a semiconductor component on the basis of gallium nitride (GaN) and at least two, preferably three, electrodes arranged vertically one above the other. The semiconductor layer structure includes a contact semiconductor layer contacted by a vertically lower electrode. An intermediate layer for compensating for the lattice mismatch between a non-comprised foreign substrate and the contact semiconductor layer is arranged vertically below the contact semiconductor layer in some regions.

Abstract: A semiconductor component that is designed as a trench MISFET. The semiconductor component includes a substrate made of gallium nitride (GaN), a drift layer situated thereon, a barrier layer, and a source region situated thereabove. The source region includes a gate trench that extends from the source region into the underlying barrier layer.