Abstract: The present invention provides methods for forming SOI wafers having internal gettering layers for sequestering metallic impurities. More particularly, in one embodiment of the invention, a plurality of sites for sequestering metallic impurities are formed in a silicon substrate by implanting a selected dose of oxygen ions therein. In one embodiment, an epitaxial layer of crystalline silicon is formed over the substrate, and a buried continuous oxide layer is generated in the epitaxial layer, for example, by employing a SIMOX process.