Abstract: An apparatus, system and method. The apparatus is to be coupled to a memory array of a memory device. The apparatus, in response to a determination of a set command to be implemented on first memory cells of the memory array, is to control an execution of a set pre-read operation on the first memory cells by causing application, by a voltage source, of a first demarcation voltage VDM0 across each of the first memory cells during a set pre-read time period. The apparatus is further to, in response to a determination of a reset command to be implemented on second memory cells of the memory array, control an execution of a reset pre-read operation on the second memory cells by causing application, by the voltage source, of a second demarcation voltage VDM3 across each of the second memory cells during a reset pre-read time period, wherein the set pre-read time period and the reset pre-read time period do not overlap, the voltage source to supply a single voltage value at any given time.

Abstract: A method, apparatus and system. The method includes: generating, during a read operation of a memory cell, a mirror current iMir1 at one of a WL node or a BL node of the memory cell opposite, respectively, one of a BL side or a WL side of the memory cell to which a current mode sense circuitry is connected, the iMir1 to reduce a value of the read voltage from VDM1 to VDM2, wherein the read voltage is between the WL node and the BL node; and sensing, using the current mode sense circuitry, a logic state of the memory cell at VDM2.

Abstract: A program current pulse (e.g., reset or set pulse) for a cross-point memory cell can be generated with improved efficiency and effectiveness by controlling the voltage applied to a selection transistor near the memory cell to increase current through the memory cell. In one example, a method involves applying a first voltage to a gate of a selection transistor coupled between the memory cell and a first supply voltage and transitioning the first voltage applied to the gate of the selection transistor to a second voltage. The transition from the first voltage to the second voltage causes an increase of current through the memory cell due to a charge sharing event between capacitances at the terminals of the selection transistor. The current path through the memory cell can then be disabled to terminate the program current pulse.

Abstract: An apparatus is described having an electrical interface that supports a first specification and a second specification. The first specification specifies differentially transmitted data. The second specification specifies at least three transmitted data signals. The electrical interface includes a plurality of modular transmitter circuits where each transmitter circuit includes a single ended driver and a select circuit. The select circuit is to select either one end of a differential signal associated with the first specification or one of the at least three transmitted data signals associated with the second specification.

Abstract: An apparatus is described having an electrical interface that supports a first specification and a second specification. The first specification specifies differentially transmitted data. The second specification specifies at least three transmitted data signals. The electrical interface includes a plurality of modular transmitter circuits where each transmitter circuit includes a single ended driver and a select circuit. The select circuit is to select either one end of a differential signal associated with the first specification or one of the at least three transmitted data signals associated with the second specification.

Abstract: Described herein are embodiments of a bipolar junction transistor including a plurality of base terminal rings having an emitter terminal ring between any two base terminal rings of the plurality of base terminal rings, and a collector terminal ring surrounding the plurality of base terminal rings and the emitter terminal ring and methods of manufacturing the same.

Abstract: Described herein are embodiments of a bipolar junction transistor including a plurality of base terminal rings having an emitter terminal ring between any two base terminal rings of the plurality of base terminal rings, and a collector terminal ring surrounding the plurality of base terminal rings and the emitter terminal ring and methods of manufacturing the same.

Abstract: Embodiments of the invention relate to a memory control hub (MCH) clock master of an MCH. Typically, in a computer system, a processor is coupled to the MCH by a front-side bus (FSB). Further, an input/output control hub (ICH) is typically coupled to the MCH by a back-side bus or Hub Link. In one embodiment, a host phase locked loop (HPLL) of the MCH clock master receives an FSB clock signal transmitted on the FSB and generates a local synchronous clock signal based upon the FSB clock signal. A delayed lock loop (DLL) of the MCH clock master also receives the FSB clock signal and generates a system clock signal. Particularly, the DLL synchronizes the system clock signal to the local synchronous clock and drives the system clock signal to many different devices on the board.

Abstract: Embodiments of the invention relate to a memory control hub (MCH) clock master of an MCH. Typically, in a computer system, a processor is coupled to the MCH by a front-side bus (FSB). Further, an input/output control hub (ICH) is typically coupled to the MCH by a back-side bus or Hub Link. In one embodiment, a host phase locked loop (HPLL) of the MCH clock master receives an FSB clock signal transmitted on the FSB and generates a local synchronous clock signal based upon the FSB clock signal. A delayed lock loop (DLL) of the MCH clock master also receives the FSB clock signal and generates a system clock signal. Particularly, the DLL synchronizes the system clock signal to the local synchronous clock and drives the system clock signal to many different devices on the board.