Abstract: The invention relates to the use of a reactive liquid applied material for producing a roofing membrane, wherein the reactive liquid applied material has a liquid component and a powder component, wherein the powder component comprises a mineral binder system consisting of a plurality of mineral binders capable of forming an ettringite phase when combined, and wherein the liquid component comprises one or more aqueous polymer dispersions. According to the invention, the reactive material contains at least twice, preferably at least 2.5 times, in particular at least three times as much wt. % solids content of polymers as it does wt. % mineral binders, a proportion of a PU polymer is at most 30% of the solids content of polymers, relative to the total mass of the polymers, and at least one of the polymers used in the reactive roof waterproofing product has a Tg determined by DSC of less than ?20° C., preferably less than ?30° C.

Abstract: A build piece is made from a build plan by an additive metal deposition process, the build plan created from a three dimensional definition of a desired part, the build plan having a first set of dimensions corresponding to the desired part and includes a support structure. The build piece is to a chemical etchant such that the support structure is removed from the build piece and the dimensions of the build piece corresponding to the desired part are reduced to a second set of dimensions.

Abstract: A build piece is made from a build plan by an additive metal deposition process, the build plan created from a three dimensional definition of a desired part, the build plan having a first set of dimensions corresponding to the desired part and includes a support structure. The build piece is to a chemical etchant such that the support structure is removed from the build piece and the dimensions of the build piece corresponding to the desired part are reduced to a second set of dimensions.

Abstract: A build piece is made from a build plan by an additive metal deposition process, the build plan created from a three dimensional definition of a desired part, the build plan having a first set of dimensions corresponding to the desired part and includes a support structure. The build piece is to a chemical etchant such that the support structure is removed from the build piece and the dimensions of the build piece corresponding to the desired part are reduced to a second set of dimensions.

Abstract: A build piece is made from a build plan by an additive metal deposition process, the build plan created from a three dimensional definition of a desired part, the build plan having a first set of dimensions corresponding to the desired part and includes a support structure. The build piece is to a chemical etchant such that the support structure is removed from the build piece and the dimensions of the build piece corresponding to the desired part are reduced to a second set of dimensions.

Abstract: A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of the thinned wafer opposite the front side, and the back side layer may be configured to counter stress on the front side of the wafer including the plurality of integrated circuit devices thereon. After providing the back side layer, the plurality of integrated circuit devices may be separated. Related structures are also discussed.

Abstract: Portable access platforms for unloading flatbed semi trucks to limit hazards and fall exposure while facilitating apparatus assembly and breakdown, thereby saving associated costs, is disclosed. The apparatus also provides enhanced adjustability, all while reducing fall exposure and providing a means to safely, with stand to the side of the loads while rigging and hoisting. The inventive platform technology, in embodiments, increase speed, efficiency, and safety, including by providing better vision and mobility to employees.

Abstract: A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of the thinned wafer opposite the front side, and the back side layer may be configured to counter stress on the front side of the wafer including the plurality of integrated circuit devices thereon. After providing the back side layer, the plurality of integrated circuit devices may be separated. Related structures are also discussed.

Abstract: A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of the thinned wafer opposite the front side, and the back side layer may be configured to counter stress on the front side of the wafer including the plurality of integrated circuit devices thereon. After providing the back side layer, the plurality of integrated circuit devices may be separated. Related structures are also discussed.

Abstract: Metallurgy structures for input/output pads of an electronic devices can be adapted to receive both solder and wire bonds. First and second metallurgy structures, for example, can be provided on respective first and second input/output pads of an electronic device such that the first and second common metallurgy structures have a shared structure adapted to receive both solder and wire bonds. A solder bond can thus be applied to the first metallurgy structure, and a wire bond can be applied to the second metallurgy structure.

Abstract: A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of the thinned wafer opposite the front side, and the back side layer may be configured to counter stress on the front side of the wafer including the plurality of integrated circuit devices thereon. After providing the back side layer, the plurality of integrated circuit devices may be separated. Related structures are also discussed.

Abstract: Metallurgy structures for input/output pads of an electronic devices can be adapted to receive both solder and wire bonds. First and second metallurgy structures, for example, can be provided on respective first and second input/output pads of an electronic device such that the first and second common metallurgy structures have a shared structure adapted to receive both solder and wire bonds. A solder bond can thus be applied to the first metallurgy structure, and a wire bond can be applied to the second metallurgy structure.

Abstract: Metallurgy structures for input/output pads of an electronic devices can be adapted to receive both solder and wire bonds. First and second metallurgy structures, for example, can be provided on respective first and second input/output pads of an electronic device such that the first and second common metallurgy structures have a shared structure adapted to receive both solder and wire bonds. A solder bond can thus be applied to the first metallurgy structure, and a wire bond can be applied to the second metallurgy structure.

Abstract: Metallurgy structures for input/output pads of an electronic devices can be adapted to receive both solder and wire bonds. First and second metallurgy structures, for example, can be provided on respective first and second input/output pads of an electronic device such that the first and second common metallurgy structures have a shared structure adapted to receive both solder and wire bonds. A solder bond can thus be applied to the first metallurgy structure, and a wire bond can be applied to the second metallurgy structure.